KR20090013051A - 반도체 소자의 저온 산화 방법 - Google Patents

반도체 소자의 저온 산화 방법 Download PDF

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Publication number
KR20090013051A
KR20090013051A KR1020080072228A KR20080072228A KR20090013051A KR 20090013051 A KR20090013051 A KR 20090013051A KR 1020080072228 A KR1020080072228 A KR 1020080072228A KR 20080072228 A KR20080072228 A KR 20080072228A KR 20090013051 A KR20090013051 A KR 20090013051A
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KR
South Korea
Prior art keywords
substrate
oxygen
hydrogen
chamber
plasma
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KR1020080072228A
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English (en)
Korean (ko)
Inventor
타이 쳉 츄아
제임스 피. 크루즈
코리 차르닉
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20090013051A publication Critical patent/KR20090013051A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

Landscapes

  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020080072228A 2007-07-30 2008-07-24 반도체 소자의 저온 산화 방법 Ceased KR20090013051A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/830,140 2007-07-30
US11/830,140 US7645709B2 (en) 2007-07-30 2007-07-30 Methods for low temperature oxidation of a semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110010563A Division KR20110018408A (ko) 2007-07-30 2011-02-07 반도체 소자의 저온 산화 방법

Publications (1)

Publication Number Publication Date
KR20090013051A true KR20090013051A (ko) 2009-02-04

Family

ID=40338567

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020080072228A Ceased KR20090013051A (ko) 2007-07-30 2008-07-24 반도체 소자의 저온 산화 방법
KR1020110010563A Withdrawn KR20110018408A (ko) 2007-07-30 2011-02-07 반도체 소자의 저온 산화 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110010563A Withdrawn KR20110018408A (ko) 2007-07-30 2011-02-07 반도체 소자의 저온 산화 방법

Country Status (4)

Country Link
US (1) US7645709B2 (https=)
JP (1) JP2009033179A (https=)
KR (2) KR20090013051A (https=)
TW (1) TWI553734B (https=)

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US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
US8481433B2 (en) 2009-03-31 2013-07-09 Applied Materials, Inc. Methods and apparatus for forming nitrogen-containing layers
WO2010117703A2 (en) * 2009-03-31 2010-10-14 Applied Materials, Inc. Method of selective nitridation
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
WO2010147937A2 (en) * 2009-06-15 2010-12-23 Applied Materials, Inc. Enhancing nand flash floating gate performance
WO2011032854A2 (en) * 2009-09-18 2011-03-24 Oerlikon Solar Ag, Truebbach A method for manufacturing a photovoltaic device
US20110189860A1 (en) * 2010-02-02 2011-08-04 Applied Materials, Inc. Methods for nitridation and oxidation
CN102108484B (zh) * 2011-01-18 2012-07-04 厦门建霖工业有限公司 一种双层抗菌镀层的制备方法
US20120326230A1 (en) * 2011-06-22 2012-12-27 International Business Machines Corporation Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
KR102028779B1 (ko) 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
DE102015109786A1 (de) * 2015-06-18 2016-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement
US10020186B2 (en) * 2016-07-29 2018-07-10 Applied Materials, Inc. Silicon germanium selective oxidation process
JP6304410B2 (ja) * 2017-01-26 2018-04-04 富士通セミコンダクター株式会社 半導体装置の製造方法
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
CN108447770B (zh) * 2018-03-08 2020-07-28 清华大学 二氧化硅薄膜的制备方法
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10790183B2 (en) 2018-06-05 2020-09-29 Applied Materials, Inc. Selective oxidation for 3D device isolation
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

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Also Published As

Publication number Publication date
TW200913069A (en) 2009-03-16
KR20110018408A (ko) 2011-02-23
US7645709B2 (en) 2010-01-12
JP2009033179A (ja) 2009-02-12
US20090035952A1 (en) 2009-02-05
TWI553734B (zh) 2016-10-11

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