JP2009033144A5 - - Google Patents
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- Publication number
- JP2009033144A5 JP2009033144A5 JP2008168824A JP2008168824A JP2009033144A5 JP 2009033144 A5 JP2009033144 A5 JP 2009033144A5 JP 2008168824 A JP2008168824 A JP 2008168824A JP 2008168824 A JP2008168824 A JP 2008168824A JP 2009033144 A5 JP2009033144 A5 JP 2009033144A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- layer
- substrate
- insulating surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 57
- 239000013078 crystal Substances 0.000 claims 45
- 239000000758 substrate Substances 0.000 claims 38
- 238000010438 heat treatment Methods 0.000 claims 24
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 150000002500 ions Chemical class 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 238000000926 separation method Methods 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 230000008602 contraction Effects 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 150000001282 organosilanes Chemical class 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008168824A JP5325477B2 (ja) | 2007-06-29 | 2008-06-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007173452 | 2007-06-29 | ||
| JP2007173452 | 2007-06-29 | ||
| JP2008168824A JP5325477B2 (ja) | 2007-06-29 | 2008-06-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009033144A JP2009033144A (ja) | 2009-02-12 |
| JP2009033144A5 true JP2009033144A5 (https=) | 2011-06-02 |
| JP5325477B2 JP5325477B2 (ja) | 2013-10-23 |
Family
ID=39791344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008168824A Expired - Fee Related JP5325477B2 (ja) | 2007-06-29 | 2008-06-27 | 半導体装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7915684B2 (https=) |
| EP (1) | EP2009694A3 (https=) |
| JP (1) | JP5325477B2 (https=) |
| KR (1) | KR101510687B1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120058106A (ko) * | 2010-11-29 | 2012-06-07 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
| TWI699023B (zh) | 2014-06-30 | 2020-07-11 | 日商半導體能源研究所股份有限公司 | 發光裝置，模組，及電子裝置 |
| US10516075B2 (en) * | 2017-09-11 | 2019-12-24 | Nichia Corporation | Method of manufacturing a light emitting element |
| WO2021090106A1 (ja) * | 2019-11-08 | 2021-05-14 | 株式会社半導体エネルギー研究所 | トランジスタ、および電子機器 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0143873B1 (ko) * | 1993-02-19 | 1998-08-17 | 순페이 야마자끼 | 절연막 및 반도체장치 및 반도체 장치 제조방법 |
| JPH09116167A (ja) * | 1994-12-27 | 1997-05-02 | Seiko Epson Corp | 薄膜半導体装置、液晶表示装置及びその製造方法、並びに電子機器 |
| JP3372158B2 (ja) | 1996-02-09 | 2003-01-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JPH11145438A (ja) * | 1997-11-13 | 1999-05-28 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| US6420758B1 (en) * | 1998-11-17 | 2002-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity region overlapping a gate electrode |
| TW511298B (en) * | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
| SG143975A1 (en) | 2001-02-28 | 2008-07-29 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JP4831885B2 (ja) | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3913534B2 (ja) * | 2001-11-30 | 2007-05-09 | 株式会社半導体エネルギー研究所 | 表示装置及びこれを用いた表示システム |
| WO2003105204A2 (en) * | 2002-06-07 | 2003-12-18 | Amberwave Systems Corporation | Semiconductor devices having strained dual channel layers |
| JP2004281878A (ja) * | 2003-03-18 | 2004-10-07 | Seiko Epson Corp | 半導体基板の製造方法及びこれにより製造される半導体基板、電気光学装置並びに電子機器 |
| KR100483049B1 (ko) * | 2003-06-03 | 2005-04-15 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드의 제조방법 |
| US6852652B1 (en) * | 2003-09-29 | 2005-02-08 | Sharp Laboratories Of America, Inc. | Method of making relaxed silicon-germanium on glass via layer transfer |
| EP1782474B1 (en) * | 2004-08-18 | 2013-11-27 | Corning Incorporated | High strain glass/glass-ceramic containing semiconductor-on-insulator structures |
| US7393733B2 (en) * | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| JP4942341B2 (ja) * | 2004-12-24 | 2012-05-30 | 三洋電機株式会社 | 表示装置 |
| US7470573B2 (en) * | 2005-02-18 | 2008-12-30 | Sharp Laboratories Of America, Inc. | Method of making CMOS devices on strained silicon on glass |
| JP2006324426A (ja) * | 2005-05-18 | 2006-11-30 | Sony Corp | 半導体装置およびその製造方法 |
| JP2007173452A (ja) | 2005-12-21 | 2007-07-05 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタおよびその製造方法 |
-
2008
- 2008-06-10 EP EP08010529.9A patent/EP2009694A3/en not_active Withdrawn
- 2008-06-11 US US12/136,875 patent/US7915684B2/en not_active Expired - Fee Related
- 2008-06-25 KR KR20080060103A patent/KR101510687B1/ko not_active Expired - Fee Related
- 2008-06-27 JP JP2008168824A patent/JP5325477B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-10 US US13/024,808 patent/US8324077B2/en not_active Expired - Fee Related
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