JP2009033144A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2009033144A JP2009033144A JP2008168824A JP2008168824A JP2009033144A JP 2009033144 A JP2009033144 A JP 2009033144A JP 2008168824 A JP2008168824 A JP 2008168824A JP 2008168824 A JP2008168824 A JP 2008168824A JP 2009033144 A JP2009033144 A JP 2009033144A
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
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- 239000003504 photosensitizing agent Substances 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】同一基板上に単結晶半導体基板より分離し、絶縁表面を有する基板に接合層を介して接合された単結晶半導体層を含む複数種のトランジスタを形成する。一のトランジスタは、引っ張り歪が与えられた単結晶半導体層を活性層として用い、他のトランジスタは、接合後に支持基板の加熱処理によって生ずる熱収縮の一部を利用した圧縮歪が与えられた単結晶半導体層を活性層として用いる。
【選択図】図1
Description
本発明の半導体装置の作製方法について、図1乃至図6を参照して説明する。
本実施の形態においては、本発明を適用して作製された表示機能を有する半導体装置の例を、図7を参照して説明する。
本発明の半導体装置においては、支持基板101上に薄い単結晶半導体層150と、厚い単結晶半導体層160とを貼り合わせによって形成することを特徴としているが、各単結晶半導体層の最表面には、イオン照射工程による分離面の一部が残留している場合がある。この分離面は水素イオン照射による脆化層(分離層)の形成領域に接していた領域であるため、通常の単結晶半導体層の表面状態に比べて平坦性に劣る。したがって、以降の工程での不良を生じないために表面状態の改善が必要となる。
本発明を適用して、様々な表示機能を有する半導体装置を作製することができる。即ち、それら表示機能を有する半導体装置を表示部に組み込んだ様々な電子機器に本発明を適用できる。本実施の形態では、高性能でかつ高信頼性を付与することを目的とした表示機能を有する半導体装置を有する電子機器の例を説明する。
本発明によって形成される表示素子を有する半導体装置によって、テレビジョン装置を完成させることができる。高性能で、かつ高信頼性を付与することを目的としたテレビジョン装置の例を説明する。
102 単結晶半導体層
104 接合層
108 半導体基板
109 ブロッキング層
110 脆化層
121 酸化シリコン膜
Claims (13)
- 絶縁表面を有する基板上に設けられた第1の回路及び第2の回路を有し、
前記第1の回路は、第1の単結晶半導体層を活性層として含む第1のトランジスタを有し、
前記第2の回路は、第2の単結晶半導体層を活性層として含む第2のトランジスタを有し、
前記第1の単結晶半導体層および前記第2の単結晶半導体層は、前記絶縁表面を有する基板との間に接合層を介して設けられ、
前記第2の単結晶半導体層は、圧縮歪状態を有する単結晶シリコン層であることを特徴とする半導体装置。 - 絶縁表面を有する基板上に設けられた第1の回路及び第2の回路を有し、
前記第1の回路は、第1の単結晶半導体層を活性層として含む第1のトランジスタを有し、
前記第2の回路は、第2の単結晶半導体層を活性層として含む第2のトランジスタを有し、
前記第1の単結晶半導体層および前記第2の単結晶半導体層は、前記絶縁表面を有する基板との間に接合層を介して設けられ、
前記第1の単結晶半導体層は、引っ張り歪状態を有する単結晶シリコン層であり、
前記第2の単結晶半導体層は、圧縮歪状態を有する単結晶シリコン層であることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1の回路は、表示装置のデータドライバ、スキャンドライバ、ロジック回路の一を含み、
前記第2の回路は、表示装置の画素回路を含むことを特徴とする半導体装置。 - 請求項3において、
前記表示装置の画素部は、EL素子を有し、
前記第2のトランジスタは、前記EL素子への電流供給の制御を行うトランジスタであることを特徴とする半導体装置。 - 請求項3において、
前記表示装置の画素部は、液晶素子を有し、
前記第2のトランジスタは、前記液晶素子への電圧印加の制御を行うトランジスタであることを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一において、
前記接合層は、有機シランガスを用いて化学気相成長法により形成された酸化シリコン膜でなることを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一において、前記絶縁表面を有する基板は、透光性を有する材料でなることを特徴とする半導体装置。
- 単結晶半導体基板表面にイオンを照射して、前記単結晶半導体基板内部に脆化層を形成し、
絶縁表面を有する基板上に接合層を形成し、
前記接合層と前記単結晶半導体基板を接合させ、
前記脆化層を分離面として前記単結晶半導体基板より単結晶半導体層を分離させ、
前記絶縁表面を有する基板の加熱処理により前記単結晶半導体層に熱収縮を生じさせて、前記単結晶半導体層に圧縮歪を生じさせることを特徴とする半導体装置の作製方法。 - 単結晶半導体基板表面にイオンを照射して、前記単結晶半導体基板内部に脆化層を形成し、
前記単結晶半導体基板上に接合層を形成し、
前記接合層と絶縁表面を有する基板を接合させ、
前記脆化層を分離面として前記単結晶半導体基板より単結晶半導体層を分離させ、
前記絶縁表面を有する基板の加熱処理により前記単結晶半導体層に熱収縮を生じさせて、前記単結晶半導体層に圧縮歪を生じさせることを特徴とする半導体装置の作製方法。 - 単結晶半導体基板表面にイオンを照射して、前記単結晶半導体基板内部に脆化層を形成し、
絶縁表面を有する基板上に接合層を形成し、
前記接合層と前記単結晶半導体基板を接合させ、
前記脆化層を分離面として前記単結晶半導体基板より単結晶半導体層を分離させ、
前記絶縁表面を有する基板の加熱処理により前記単結晶半導体層に熱収縮を生じさせて、前記単結晶半導体層に圧縮歪を生じさせた後、引っ張り歪を有する単結晶半導体層を接合により、前記絶縁表面を有する基板上に形成することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板表面にイオンを照射して、前記単結晶半導体基板内部に脆化層を形成し、
前記単結晶半導体基板上に接合層を形成し、
前記接合層と絶縁表面を有する基板を接合させ、
前記脆化層を分離面として前記単結晶半導体基板より単結晶半導体層を分離させ、
前記絶縁表面を有する基板の加熱処理により前記単結晶半導体層に熱収縮を生じさせて、前記単結晶半導体層に圧縮歪を生じさせた後、引っ張り歪を有する単結晶半導体層を接合により、前記絶縁表面を有する基板上に形成することを特徴とする半導体装置の作製方法。 - 請求項8乃至請求項11のいずれか一において、
前記接合層は、有機シランガスを用いて化学気相成長法により形成された酸化シリコン膜でなることを特徴とする半導体装置の作製方法。 - 請求項8乃至請求項12のいずれか一において、
前記絶縁表面を有する基板は、透光性を有する材料でなることを特徴とする半導体装置の作製方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2008168824A JP5325477B2 (ja) | 2007-06-29 | 2008-06-27 | 半導体装置の作製方法 |
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KR20120058106A (ko) * | 2010-11-29 | 2012-06-07 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
TWI755773B (zh) | 2014-06-30 | 2022-02-21 | 日商半導體能源研究所股份有限公司 | 發光裝置,模組,及電子裝置 |
US10516075B2 (en) * | 2017-09-11 | 2019-12-24 | Nichia Corporation | Method of manufacturing a light emitting element |
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Also Published As
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US20110129987A1 (en) | 2011-06-02 |
US20090002589A1 (en) | 2009-01-01 |
KR20090004549A (ko) | 2009-01-12 |
EP2009694A3 (en) | 2017-06-21 |
EP2009694A2 (en) | 2008-12-31 |
US7915684B2 (en) | 2011-03-29 |
JP5325477B2 (ja) | 2013-10-23 |
KR101510687B1 (ko) | 2015-04-10 |
US8324077B2 (en) | 2012-12-04 |
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