JP2009021436A5 - - Google Patents

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Publication number
JP2009021436A5
JP2009021436A5 JP2007183478A JP2007183478A JP2009021436A5 JP 2009021436 A5 JP2009021436 A5 JP 2009021436A5 JP 2007183478 A JP2007183478 A JP 2007183478A JP 2007183478 A JP2007183478 A JP 2007183478A JP 2009021436 A5 JP2009021436 A5 JP 2009021436A5
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JP
Japan
Prior art keywords
electrode
metal
electrodes
semiconductor device
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007183478A
Other languages
English (en)
Japanese (ja)
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JP2009021436A (ja
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Publication date
Application filed filed Critical
Priority to JP2007183478A priority Critical patent/JP2009021436A/ja
Priority claimed from JP2007183478A external-priority patent/JP2009021436A/ja
Priority to KR1020080064175A priority patent/KR101011551B1/ko
Priority to US12/169,818 priority patent/US7767997B2/en
Publication of JP2009021436A publication Critical patent/JP2009021436A/ja
Publication of JP2009021436A5 publication Critical patent/JP2009021436A5/ja
Pending legal-status Critical Current

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JP2007183478A 2007-07-12 2007-07-12 半導体装置 Pending JP2009021436A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007183478A JP2009021436A (ja) 2007-07-12 2007-07-12 半導体装置
KR1020080064175A KR101011551B1 (ko) 2007-07-12 2008-07-03 반도체 장치
US12/169,818 US7767997B2 (en) 2007-07-12 2008-07-09 Semiconductor device with solid electrolyte switching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007183478A JP2009021436A (ja) 2007-07-12 2007-07-12 半導体装置

Publications (2)

Publication Number Publication Date
JP2009021436A JP2009021436A (ja) 2009-01-29
JP2009021436A5 true JP2009021436A5 (enExample) 2010-04-30

Family

ID=40252327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007183478A Pending JP2009021436A (ja) 2007-07-12 2007-07-12 半導体装置

Country Status (3)

Country Link
US (1) US7767997B2 (enExample)
JP (1) JP2009021436A (enExample)
KR (1) KR101011551B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246085A (ja) * 2008-03-31 2009-10-22 Hitachi Ltd 半導体装置およびその製造方法
JP2010019708A (ja) * 2008-07-11 2010-01-28 Hitachi Ltd 車載装置
JP5454478B2 (ja) * 2009-01-09 2014-03-26 日本電気株式会社 スイッチング素子及びその製造方法
US9269042B2 (en) 2010-09-30 2016-02-23 International Business Machines Corporation Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devices
CN103460220A (zh) * 2012-01-23 2013-12-18 松下电器产业株式会社 神经网络电路的学习方法
US9117525B2 (en) 2012-09-12 2015-08-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
JP5659361B1 (ja) 2013-07-04 2015-01-28 パナソニックＩｐマネジメント株式会社 ニューラルネットワーク回路、およびその学習方法
JP6333566B2 (ja) * 2014-02-03 2018-05-30 国立研究開発法人物質・材料研究機構 ニューロン動作素子
KR20160025721A (ko) 2014-08-28 2016-03-09 정규헌 상,하부 비깃을 한번에 묶어 고정하는 빗자루

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60242354A (ja) 1984-05-16 1985-12-02 Sharp Corp Ｆｅｔ型センサ
KR0161498B1 (ko) * 1996-06-29 1999-05-01 이형도 평판형 감마센서
WO2005008783A1 (ja) * 2003-07-18 2005-01-27 Nec Corporation スイッチング素子、スイッチング素子の駆動方法、書き換え可能な論理集積回路およびメモリ素子
DE102004037450B4 (de) * 2004-08-02 2009-04-16 Qimonda Ag Verfahren zum Betrieb eines Schalt-Bauelements
US7804085B2 (en) * 2005-01-17 2010-09-28 Nec Corporation Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit
DE102005012047A1 (de) * 2005-03-16 2006-09-28 Infineon Technologies Ag Festkörperelektrolyt-Speicherelement und Verfahren zur Herstellung eines solchen Speicherlements
JP2008053135A (ja) 2006-08-28 2008-03-06 Sumitomo Electric Ind Ltd 薄膜電池

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