ATE535949T1 - Speichervorrichtung und cbram-speicher mit erhöhter zuverlässigkeit - Google Patents

Speichervorrichtung und cbram-speicher mit erhöhter zuverlässigkeit

Info

Publication number
ATE535949T1
ATE535949T1 AT09802497T AT09802497T ATE535949T1 AT E535949 T1 ATE535949 T1 AT E535949T1 AT 09802497 T AT09802497 T AT 09802497T AT 09802497 T AT09802497 T AT 09802497T AT E535949 T1 ATE535949 T1 AT E535949T1
Authority
AT
Austria
Prior art keywords
inert electrode
memory
coefficient
memory device
increased reliability
Prior art date
Application number
AT09802497T
Other languages
English (en)
Inventor
Cyril Dressler
Veronique Sousa
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE535949T1 publication Critical patent/ATE535949T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
AT09802497T 2008-07-29 2009-07-27 Speichervorrichtung und cbram-speicher mit erhöhter zuverlässigkeit ATE535949T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0855219A FR2934711B1 (fr) 2008-07-29 2008-07-29 Dispositif memoire et memoire cbram a fiablilite amelioree.
PCT/EP2009/059664 WO2010012683A1 (fr) 2008-07-29 2009-07-27 Dispositif memoire et memoire cbram a fiabilite amelioree

Publications (1)

Publication Number Publication Date
ATE535949T1 true ATE535949T1 (de) 2011-12-15

Family

ID=40416918

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09802497T ATE535949T1 (de) 2008-07-29 2009-07-27 Speichervorrichtung und cbram-speicher mit erhöhter zuverlässigkeit

Country Status (6)

Country Link
US (1) US9082965B2 (de)
EP (1) EP2304819B1 (de)
JP (1) JP2011529630A (de)
AT (1) ATE535949T1 (de)
FR (1) FR2934711B1 (de)
WO (1) WO2010012683A1 (de)

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FR2977709B1 (fr) 2011-07-05 2015-01-02 Altis Semiconductor Snc Procede de fabrication d'un dispositif microelectronique a memoire programmable
JP6218388B2 (ja) * 2012-02-06 2017-10-25 アイメックＩｍｅｃ 自己絶縁型導電性ブリッジメモリデバイス
US8691622B2 (en) 2012-05-25 2014-04-08 Micron Technology, Inc. Memory cells and methods of forming memory cells
US9530823B2 (en) 2013-09-12 2016-12-27 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
US9246086B2 (en) 2013-10-02 2016-01-26 Sony Corporation Conductive bridge memory system and method of manufacture thereof
US8981334B1 (en) * 2013-11-01 2015-03-17 Micron Technology, Inc. Memory cells having regions containing one or both of carbon and boron
TWI625874B (zh) * 2015-11-05 2018-06-01 華邦電子股份有限公司 導電橋接式隨機存取記憶體
US9553263B1 (en) 2015-11-06 2017-01-24 Micron Technology, Inc. Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems
US9947722B2 (en) 2016-03-16 2018-04-17 Toshiba Memory Corporation Semiconductor memory device
US10665781B2 (en) * 2016-03-31 2020-05-26 Intel Corporation Programmable metallization cell with alloy layer
WO2017171823A1 (en) * 2016-03-31 2017-10-05 Intel Corporation Multilayer selector device with low holding voltage
US10868246B2 (en) 2016-09-30 2020-12-15 Intel Corporation Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer
EP3621126B1 (de) * 2018-09-05 2021-06-16 IMEC vzw Herstellung einer integrierten elektronischen schaltung mit einer komponente auf basis der migration und reduzierung von metallionen

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US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US6114719A (en) * 1998-05-29 2000-09-05 International Business Machines Corporation Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
US7035062B1 (en) * 2001-11-29 2006-04-25 Seagate Technology Llc Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6949435B2 (en) * 2003-12-08 2005-09-27 Sharp Laboratories Of America, Inc. Asymmetric-area memory cell
DE102004041894B3 (de) * 2004-08-30 2006-03-09 Infineon Technologies Ag Speicherbauelement (CBRAM) mit Speicherzellen auf der Basis eines in seinem Widerstandswert änderbaren aktiven Festkörper-Elektrolytmaterials und Herstellungsverfahren dafür
DE102004046804B4 (de) * 2004-09-27 2006-10-05 Infineon Technologies Ag Resistiv schaltender Halbleiterspeicher
FR2880177B1 (fr) * 2004-12-23 2007-05-18 Commissariat Energie Atomique Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores
JP2006278864A (ja) * 2005-03-30 2006-10-12 Renesas Technology Corp 相変化型不揮発性メモリ及びその製造方法
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FR2895531B1 (fr) * 2005-12-23 2008-05-09 Commissariat Energie Atomique Procede ameliore de realisation de cellules memoires de type pmc
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FR2937462B1 (fr) * 2008-10-16 2010-12-24 Commissariat Energie Atomique Procede de protection et de dissipation de decharges electrostatiques sur un circuit integre
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Also Published As

Publication number Publication date
EP2304819B1 (de) 2011-11-30
US20110121254A1 (en) 2011-05-26
FR2934711A1 (fr) 2010-02-05
JP2011529630A (ja) 2011-12-08
FR2934711B1 (fr) 2011-03-11
US9082965B2 (en) 2015-07-14
WO2010012683A1 (fr) 2010-02-04
EP2304819A1 (de) 2011-04-06

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