FR2977709B1 - Procede de fabrication d'un dispositif microelectronique a memoire programmable - Google Patents

Procede de fabrication d'un dispositif microelectronique a memoire programmable

Info

Publication number
FR2977709B1
FR2977709B1 FR1156033A FR1156033A FR2977709B1 FR 2977709 B1 FR2977709 B1 FR 2977709B1 FR 1156033 A FR1156033 A FR 1156033A FR 1156033 A FR1156033 A FR 1156033A FR 2977709 B1 FR2977709 B1 FR 2977709B1
Authority
FR
France
Prior art keywords
manufacturing
microelectronic device
programmable memory
memory microelectronic
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1156033A
Other languages
English (en)
Other versions
FR2977709A1 (fr
Inventor
Faiz Dahmani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab France SAS
Original Assignee
Altis Semiconductor SNC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altis Semiconductor SNC filed Critical Altis Semiconductor SNC
Priority to FR1156033A priority Critical patent/FR2977709B1/fr
Priority to US13/539,751 priority patent/US8597975B2/en
Publication of FR2977709A1 publication Critical patent/FR2977709A1/fr
Application granted granted Critical
Publication of FR2977709B1 publication Critical patent/FR2977709B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/002—Other surface treatment of glass not in the form of fibres or filaments by irradiation by ultraviolet light
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Memories (AREA)
FR1156033A 2011-07-05 2011-07-05 Procede de fabrication d'un dispositif microelectronique a memoire programmable Expired - Fee Related FR2977709B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1156033A FR2977709B1 (fr) 2011-07-05 2011-07-05 Procede de fabrication d'un dispositif microelectronique a memoire programmable
US13/539,751 US8597975B2 (en) 2011-07-05 2012-07-02 Method of fabricating a microelectronic device with programmable memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1156033A FR2977709B1 (fr) 2011-07-05 2011-07-05 Procede de fabrication d'un dispositif microelectronique a memoire programmable

Publications (2)

Publication Number Publication Date
FR2977709A1 FR2977709A1 (fr) 2013-01-11
FR2977709B1 true FR2977709B1 (fr) 2015-01-02

Family

ID=44543505

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1156033A Expired - Fee Related FR2977709B1 (fr) 2011-07-05 2011-07-05 Procede de fabrication d'un dispositif microelectronique a memoire programmable

Country Status (2)

Country Link
US (1) US8597975B2 (fr)
FR (1) FR2977709B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US8268664B2 (en) * 2007-03-05 2012-09-18 Altis Semiconductor Methods of manufacturing a semiconductor device; method of manufacturing a memory cell; semiconductor device; semiconductor processing device; integrated circuit having a memory cell
FR2934711B1 (fr) 2008-07-29 2011-03-11 Commissariat Energie Atomique Dispositif memoire et memoire cbram a fiablilite amelioree.

Also Published As

Publication number Publication date
FR2977709A1 (fr) 2013-01-11
US8597975B2 (en) 2013-12-03
US20130126813A1 (en) 2013-05-23

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Legal Events

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PLFP Fee payment

Year of fee payment: 6

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Year of fee payment: 7

TP Transmission of property

Owner name: X-FAB FRANCE, FR

Effective date: 20180516

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Year of fee payment: 8

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Effective date: 20240305