JP2009016691A - 固体撮像素子、この固体撮像素子を用いたカメラモジュール及び半導体装置の製造方法 - Google Patents
固体撮像素子、この固体撮像素子を用いたカメラモジュール及び半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】半導体基板32に、それぞれ光電変換素子と電界効果トランジスタを含む複数の画素を配列した撮像画素部、及びこの撮像画素部の周辺回路部を設け、前記撮像画素部の電界効果トランジスタを駆動する配線層が前記半導体基板の第1面側に形成され、前記光電変換素子の受光面が前記半導体基板の第2面側に配置された固体撮像素子であって、前記半導体基板の第2面側に、前記半導体基板から露出された第1端子17を備える。
【選択図】 図3
Description
[第1の実施形態]
図1は、本発明の第1の実施形態について説明するためのもので、カメラモジュールの断面構成図である。このモジュールには、レンズユニット11の下に、カバーガラス12、裏面照射型のCMOSセンサーチップ32及び受動素子チップ(抵抗や容量等)14が設けられており、下面に外部接続端子としての半田ボール15−1,15−2,…が形成されている。
図11は、本発明の第2の実施形態について説明するためのもので、カメラモジュールの一部を切り欠いて示す斜視図である。本カメラモジュールは、実装基板31上にセンサーチップ32をマウント(COB:チップオンボード)し、チップ32の受光面側に形成した第1端子(図3におけるAlパッド17に対応する)と実装基板31との接続をワイヤボンディングによって行ったものである。また、上記チップ32の周辺の実装基板31上に受動素子チップ33が表面実装(SMT)されている。上記センサーチップ32上にはカバーガラス34が設けられており、このカバーガラス34上にレンズユニット35が設けられ、レンズユニット35に入射された光をカバーガラス34を介してセンサーチップ32中の光電変換素子の受光面に集光するようになっている。
なお、上記第1,第2の実施形態では、比較的パターン占有面積の大きい抵抗や容量等を受動素子チップ14、33中に形成し、センサーチップ32と一緒に実装する場合を例にとって説明したが、受動素子をセンサーチップ32中に集積化しても良いのは勿論である。また、上記受動素子チップ14、33に代えてDSP等の能動素子チップをセンサーチップ32と一緒に実装しても良く、DSP等の能動素子をセンサーチップ32中に集積化しても良い。
Claims (5)
- 半導体基板に、それぞれ光電変換素子と電界効果トランジスタを含む複数の画素を配列した撮像画素部、及びこの撮像画素部の周辺回路部を設け、前記撮像画素部の電界効果トランジスタを駆動する配線層が前記半導体基板の第1面側に形成され、前記光電変換素子の受光面が前記半導体基板の第2面側に配置された固体撮像素子であって、
前記半導体基板の第2面側に前記半導体基板から露出された第1端子を備え、前記第1端子と電気的に接続され且つ前記半導体基板の第1面側で外部と接続される第2端子を更に具備することを特徴とする固体撮像素子。 - 半導体基板に、それぞれ光電変換素子と電界効果トランジスタを含む複数の画素を配列した撮像画素部、及びこの撮像画素部の周辺回路部を設け、前記撮像画素部の電界効果トランジスタを駆動する配線層が前記半導体基板の第1面側に形成され、前記光電変換素子の受光面が前記半導体基板の第2面側に配置された固体撮像素子であって、
前記半導体基板の第1面側に配置されるとともに前記半導体基板の第2面側に前記半導体基板から露出されたパッド電極を備え、前記半導体基板の第1面側における前記パッド電極上にパッド開口が形成されていることを特徴とする固体撮像素子。 - それぞれ光電変換素子と電界効果トランジスタを含む複数の画素を配列した撮像画素部、及びこの撮像画素部の周辺回路部とを備え、前記撮像画素部の電界効果トランジスタを駆動する配線層が半導体基板の第1面側に形成され、前記光電変換素子の受光面が前記半導体基板の第2面側に配置された固体撮像素子と、
入射光を前記光電変換素子の受光面に集光するレンズと、
一方の面に前記半導体基板の第1面側が搭載され、他方の面に外部接続端子が設けられた部材と、
前記部材に、前記半導体基板が搭載された一方の面側から他方の面側に渡って形成され、前記外部接続端子と電気的に接続された配線とを具備し、
前記固体撮像素子は、前記半導体基板の第2面側に前記半導体基板から露出された第1端子と、前記半導体基板の第1面側に形成されて前記第1端子及び前記配線と電気的に接続された第2端子とを備えることを特徴とするカメラモジュール。 - それぞれ光電変換素子と電界効果トランジスタを含む複数の画素を配列した撮像画素部、及びこの撮像画素部の周辺回路部とを備え、半導体基板の第1面側に撮像画素部の電界効果トランジスタを駆動する配線層、前記半導体基板の第2面側に光電変換素子の受光面を備える固体撮像素子を形成する工程と、
前記半導体基板の第1面側から前記周辺回路部をテストする工程と、
前記周辺回路部をテストする工程の後に、前記半導体基板の第2面側を薄くして、前記半導体基板の第2面側に第1端子を露出させるとともに、薄くされた前記半導体基板の第2面側の前記光電変換素子の受光面に対応する位置に、入射光を集光するレンズを形成する工程と、
前記レンズを形成する工程の後に、前記半導体基板の第2面側に露出した前記第1端子を用いて前記撮像画素部のテストを行う工程と
を具備することを特徴とする半導体装置の製造方法。 - 前記撮像画素部のテストを行う工程の後に、前記半導体基板を分割して個片化する工程と、
個片化した前記半導体基板毎に、前記固体撮像素子のテストを行う工程とを更に具備することを特徴とする請求項4に記載の半導体装置の製造方法。
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JP2007178987A JP5159192B2 (ja) | 2007-07-06 | 2007-07-06 | 半導体装置の製造方法 |
US12/166,810 US7859073B2 (en) | 2007-07-06 | 2008-07-02 | Back-illuminated type solid-state image pickup device and camera module using the same |
CN2008101282993A CN101494232B (zh) | 2007-07-06 | 2008-07-04 | 背照式固态图像拾取器件及使用该器件的相机模块 |
KR1020080064819A KR100952769B1 (ko) | 2007-07-06 | 2008-07-04 | 후면 조사 타입 고체 촬상 장치 및 이를 사용한 카메라모듈 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2010199589A (ja) * | 2009-02-24 | 2010-09-09 | Taiwan Semiconductor Manufacturing Co Ltd | イメージセンサー装置および半導体イメージセンサー装置の製造方法 |
JP2011082924A (ja) * | 2009-10-09 | 2011-04-21 | Olympus Corp | 撮像ユニット |
JP2012009816A (ja) * | 2010-05-28 | 2012-01-12 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
US8531565B2 (en) | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
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JP2017028259A (ja) * | 2015-07-24 | 2017-02-02 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法、基板分割方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008002837A (ja) * | 2006-06-20 | 2008-01-10 | Denso Corp | 半導体容量式センサの製造方法 |
JP4799543B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ及びカメラモジュール |
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JP5268618B2 (ja) * | 2008-12-18 | 2013-08-21 | 株式会社東芝 | 半導体装置 |
JP2010177569A (ja) * | 2009-01-30 | 2010-08-12 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP5542543B2 (ja) | 2010-06-28 | 2014-07-09 | 株式会社東芝 | 半導体装置の製造方法 |
JP2012084609A (ja) * | 2010-10-07 | 2012-04-26 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
WO2013118501A1 (ja) | 2012-02-07 | 2013-08-15 | 株式会社ニコン | 撮像ユニットおよび撮像装置 |
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JP6262536B2 (ja) * | 2014-01-08 | 2018-01-17 | 新光電気工業株式会社 | カメラモジュールの製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
JP2005501421A (ja) * | 2001-08-31 | 2005-01-13 | アトメル グルノーブル ソシエテ アノニム | 測色の向上したカラー画像センサ及びその製造方法 |
JP2007150283A (ja) * | 2005-11-23 | 2007-06-14 | Taiwan Semiconductor Manufacturing Co Ltd | 背面照射型画像センサおよびこれに金属延伸部を設ける方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200300291A (en) * | 2001-11-05 | 2003-05-16 | Mitsumasa Koyanagi | Solid-state image sensor and its production method |
JP3722367B2 (ja) | 2002-03-19 | 2005-11-30 | ソニー株式会社 | 固体撮像素子の製造方法 |
JP4331033B2 (ja) | 2004-03-29 | 2009-09-16 | 浜松ホトニクス株式会社 | 半導体光検出素子及びその製造方法 |
US7199439B2 (en) * | 2004-06-14 | 2007-04-03 | Micron Technology, Inc. | Microelectronic imagers and methods of packaging microelectronic imagers |
JP4534634B2 (ja) | 2004-07-05 | 2010-09-01 | ソニー株式会社 | 固体撮像装置 |
WO2006137867A1 (en) | 2004-09-17 | 2006-12-28 | California Institute Of Technology | Fabrication method for back-illuminated cmos or ccd imagers made from soi wafer |
JP4124190B2 (ja) * | 2004-09-21 | 2008-07-23 | ソニー株式会社 | X−yアドレス型固体撮像素子 |
JP2006261638A (ja) * | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
US8049293B2 (en) * | 2005-03-07 | 2011-11-01 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
US7781781B2 (en) * | 2006-11-17 | 2010-08-24 | International Business Machines Corporation | CMOS imager array with recessed dielectric |
-
2007
- 2007-07-06 JP JP2007178987A patent/JP5159192B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-02 US US12/166,810 patent/US7859073B2/en not_active Expired - Fee Related
- 2008-07-04 KR KR1020080064819A patent/KR100952769B1/ko not_active IP Right Cessation
- 2008-07-04 CN CN2008101282993A patent/CN101494232B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
JP2005501421A (ja) * | 2001-08-31 | 2005-01-13 | アトメル グルノーブル ソシエテ アノニム | 測色の向上したカラー画像センサ及びその製造方法 |
JP2007150283A (ja) * | 2005-11-23 | 2007-06-14 | Taiwan Semiconductor Manufacturing Co Ltd | 背面照射型画像センサおよびこれに金属延伸部を設ける方法 |
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JP2011082924A (ja) * | 2009-10-09 | 2011-04-21 | Olympus Corp | 撮像ユニット |
JP2012009816A (ja) * | 2010-05-28 | 2012-01-12 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
JP2013543275A (ja) * | 2010-11-05 | 2013-11-28 | インヴェンサス・コーポレイション | 背面照明固体イメージセンサ |
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US10249673B2 (en) | 2010-11-05 | 2019-04-02 | Invensas Corporation | Rear-face illuminated solid state image sensors |
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US11587970B2 (en) | 2015-07-24 | 2023-02-21 | Sony Semiconductor Solutions Corporation | Imaging device, manufacturing method, and substrate dividing method |
Also Published As
Publication number | Publication date |
---|---|
KR100952769B1 (ko) | 2010-04-14 |
JP5159192B2 (ja) | 2013-03-06 |
CN101494232B (zh) | 2012-01-11 |
CN101494232A (zh) | 2009-07-29 |
US20090014762A1 (en) | 2009-01-15 |
KR20090004744A (ko) | 2009-01-12 |
US7859073B2 (en) | 2010-12-28 |
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