JP2009016656A - ZnO系半導体層及びZnO系半導体発光素子 - Google Patents
ZnO系半導体層及びZnO系半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 7
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 348
- 239000010410 layer Substances 0.000 description 249
- 239000011787 zinc oxide Substances 0.000 description 173
- 239000011669 selenium Substances 0.000 description 89
- 239000000758 substrate Substances 0.000 description 60
- 239000011701 zinc Substances 0.000 description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 35
- 238000000034 method Methods 0.000 description 24
- 238000000295 emission spectrum Methods 0.000 description 22
- 229910003363 ZnMgO Inorganic materials 0.000 description 21
- 230000004907 flux Effects 0.000 description 19
- 238000005424 photoluminescence Methods 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 16
- 230000005284 excitation Effects 0.000 description 15
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 230000001678 irradiating effect Effects 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 238000000695 excitation spectrum Methods 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000805 composite resin Substances 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003668 SrAl Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- MAHNFPMIPQKPPI-UHFFFAOYSA-N disulfur Chemical compound S=S MAHNFPMIPQKPPI-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】ZnO系半導体層は、ZnOにSeまたはSが添加され、紫外光の発光ピーク波長及び可視光の発光ピーク波長を持つ。
【選択図】図2
Description
S. Merita, T. Kramer, B. Mogwitz, B. Franz, A. Polity, and B.K. Meyer, phys. stat. sol. (c)3, No.4, 960-963 (2006)
2 基板ヒータ
3 ステージ
4 基板
5 Znソースガン
6 Oソースガン
7 Seソースガン
8 ZnSソースガン
9 Nソースガン
10 Gaソースガン
11 Mgソースガン
12 (RHEED用の)ガン
13 (RHEED用の)スクリーン
14 真空ポンプ
21 基板
22 n型ZnOバッファ層
23 n型ZnO層
24 n型ZnMgO層
25 発光層
25w 井戸層
25b 障壁層
26 p型ZnMgO層
27 p型ZnO層
31、31a n側電極
32、32a p側電極
33、33a ボンディング電極
51、51a 絶縁層
52、52a 波長変換層
53、53a 波長変換層
61 LED
71 封止樹脂
72 蛍光体
73 蛍光体
UV 紫外光
B 青色光
G 緑色光
Y 黄色光
R 赤色光
W 白色光
Claims (11)
- ZnOにSeまたはSが添加され、紫外光の発光ピーク波長及び可視光の発光ピーク波長を持つZnO系半導体層。
- ZnOにSeが添加され、前記可視光の発光ピーク波長が青色である請求項1に記載のZnO系半導体層。
- ZnOにSeが添加され、前記可視光の発光ピーク波長が430nm〜490nmの範囲内にある請求項1に記載のZnO系半導体層。
- ZnOにSが添加され、前記可視光の発光ピーク波長が緑色である請求項1に記載のZnO系半導体層。
- ZnOにSが添加され、前記可視光の発光ピーク波長が490nm〜510nmの範囲内にある請求項1に記載のZnO系半導体層。
- 第1導電型の第1の半導体層と、
前記第1導電型とは反対の第2導電型の第2の半導体層と、
ZnO系半導体層を含み、前記第1の半導体層と前記第2の半導体層との間に配置された発光層と、
前記第1の半導体層に電気的に接続される第1の電極と、
前記第2の半導体層に電気的に接続される第2の電極と
を有し、
前記ZnO系半導体層は、ZnOにSeまたはSが添加され、紫外光の発光ピーク波長及び可視光の発光ピーク波長を持つZnO系半導体発光素子。 - さらに、前記ZnO系半導体層から発した紫外光で励起されて、該ZnO系半導体層の可視光のピーク波長とは異なる第1の可視光の発光ピーク波長を持つ光を発する第1の波長変換材料を含む第1の波長変換層を有する請求項6に記載のZnO系半導体発光素子。
- さらに、前記ZnO系半導体層から発した紫外光で励起されて、該ZnO系半導体層の可視光のピーク波長、及び、前記第1の波長変換材料の第1の発光ピーク波長の双方と異なる第2の可視光の発光ピーク波長を持つ光を発する第2の波長変換材料を含む第2の波長変換層を有する請求項7に記載のZnO系半導体発光素子。
- 前記ZnO系半導体層は、ZnOにSeが添加され、その可視光の発光ピーク波長が青色である請求項6〜8のいずれか1項に記載のZnO系半導体発光素子。
- 前記ZnO系半導体層は、ZnOにSeが添加され、その可視光の発光ピーク波長が青色であり、前記第1の波長変換材料が、赤色の第1の発光ピーク波長を持つZnSeOを含み、前記第2の波長変換材料が、緑色の第2の発光ピーク波長を持つZnSOを含む請求項8に記載のZnO系半導体発光素子。
- 前記ZnO系半導体層は、ZnOにSが添加され、その可視光の発光ピーク波長が緑色である請求項6〜8のいずれか1項に記載のZnO系半導体発光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2007178402A JP5155611B2 (ja) | 2007-07-06 | 2007-07-06 | ZnO系半導体発光素子 |
US12/165,794 US7968905B2 (en) | 2007-07-06 | 2008-07-01 | ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device |
US12/969,304 US8436351B2 (en) | 2007-07-06 | 2010-12-15 | ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device |
Applications Claiming Priority (1)
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JP2007178402A JP5155611B2 (ja) | 2007-07-06 | 2007-07-06 | ZnO系半導体発光素子 |
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JP2009016656A true JP2009016656A (ja) | 2009-01-22 |
JP5155611B2 JP5155611B2 (ja) | 2013-03-06 |
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JP2007178402A Expired - Fee Related JP5155611B2 (ja) | 2007-07-06 | 2007-07-06 | ZnO系半導体発光素子 |
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US (2) | US7968905B2 (ja) |
JP (1) | JP5155611B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011181668A (ja) * | 2010-03-01 | 2011-09-15 | Stanley Electric Co Ltd | ZnO系半導体素子の製造方法及びZnO系半導体素子 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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DE112006002133B4 (de) * | 2005-08-09 | 2017-10-12 | Stanley Electric Co. Ltd. | ZnO-Kristall, sein Aufwuchsverfahren und ein Herstellungsverfahren für eine Leuchtvorrichtung |
CN103205252B (zh) * | 2013-05-16 | 2015-04-15 | 江西财经大学 | 一种新型蓝色无机发光材料及其制备方法 |
EP3198689B1 (en) | 2014-09-23 | 2023-11-01 | Heptagon Micro Optics Pte. Ltd. | Compact, power-efficient stacked broadband optical emitters |
CN104538457A (zh) * | 2015-01-15 | 2015-04-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
JP2022552355A (ja) * | 2019-10-15 | 2022-12-15 | シーダーズ-サイナイ メディカル センター | 体内紫外線療法 |
US11179575B2 (en) | 2019-10-15 | 2021-11-23 | Cedars-Sinai Medical Center | Internal ultraviolet therapy |
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JPH06256760A (ja) * | 1993-03-05 | 1994-09-13 | Olympus Optical Co Ltd | ZnO発光体 |
JP2002016285A (ja) * | 2000-06-27 | 2002-01-18 | National Institute Of Advanced Industrial & Technology | 半導体発光素子 |
JP2003069076A (ja) * | 2001-08-30 | 2003-03-07 | Shin Etsu Handotai Co Ltd | ZnO系半導体発光素子 |
JP2003081698A (ja) * | 2001-09-05 | 2003-03-19 | National Institute Of Advanced Industrial & Technology | ZnOSSe混晶半導体 |
JP2004228464A (ja) * | 2003-01-27 | 2004-08-12 | Rohm Co Ltd | 半導体発光装置 |
JP2004296459A (ja) * | 2003-03-25 | 2004-10-21 | Sharp Corp | 酸化物半導体発光素子およびその製造方法 |
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2010
- 2010-12-15 US US12/969,304 patent/US8436351B2/en not_active Expired - Fee Related
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JP2011181668A (ja) * | 2010-03-01 | 2011-09-15 | Stanley Electric Co Ltd | ZnO系半導体素子の製造方法及びZnO系半導体素子 |
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Publication number | Publication date |
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US7968905B2 (en) | 2011-06-28 |
US8436351B2 (en) | 2013-05-07 |
US20090008660A1 (en) | 2009-01-08 |
JP5155611B2 (ja) | 2013-03-06 |
US20110084275A1 (en) | 2011-04-14 |
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