JP2009010412A - 化学蒸着方法 - Google Patents
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Abstract
【解決手段】処理容器1内にガス供給系2によって供給された原料ガスが、エネルギー供給機構30により1500〜1900℃程度の高温に維持された発熱体3の表面で分解及び又は活性化して基板9の表面に薄膜が作成される。発熱体3はタングステン等の高融点金属のワイヤーであり、薄膜作成時の温度以上の2000〜3000℃程度の温度に1×10−6〜1Pa程度の真空中で5分以上維持する高温処理が施された後、処理容器1内に取り付けられている。発熱体3の成形時等に混入した重金属が高温処理により予め放出され、薄膜中への混入は1×1017atoms/ccを下回る。
【選択図】図1
Description
第一の工程が行われた前記発熱体を前記処理容器内の所定位置に配置した状態で所定の薄膜を作成する第二の工程とを有しており、
第二の工程は、前記処理容器内に所定の原料ガスを供給し、供給された原料ガスを所定の高温に発熱させた発熱体の表面を通過させ、その通過の際の発熱体の表面での原料ガスの分解及び又は活性化により、前記処理容器内に保持された基板に前記所定の薄膜を作成する工程であり、
第一の工程における発熱体の温度は、第二の工程において前記所定の薄膜を作成する際の発熱体の温度よりより高いという構成を有する。
また、請求項2の発明によれば、上記効果に加え、ワイヤー状に加工する際に不純物が混入するという特有の課題が解決されるという効果が得られる。
また、請求項3の発明によれば、上記効果に加え、発熱体を不純物が蒸発する温度にするのが発熱体の酸化を防止しながら行われるので、発熱体の作用が阻害されることがないという効果が得られる。
ガス供給系2は、所定の原料ガスを溜めたガスボンベ21と、処理容器1内に設けられたガス供給器22と、ガスボンベ21とガス供給器22とを繋ぐ配管23と、配管23上に設けられたバルブ24や流量調整器25とから構成されている。ガス供給器22は中空の部材であり、基板ホルダー4に対向した前面を有している。この前面には、小さなガス吹き出し孔220が多数形成されている。ガスボンベ21から配管23を通してガス供給器22にガスが導入され、このガスがガス吹き出し孔220から吹き出して処理容器1内に供給されるようになっている。
SiH4(g)→SiH3(g)+H*(g)
NH3(g)→NH2(g)+H*(g)
aSiH3(g)+bNH2(g)→cSiNx(s)
となる。尚、gの添え字はガス状態、sの添え字は固体状態であることを意味する。
11 排気系
2 ガス供給系
3 発熱体
30 エネルギー供給機構
4 基板ホルダー
9 基板
Claims (4)
- 処理容器外で発熱体を不純物が蒸発する温度とする第一の工程と、
第一の工程が行われた前記発熱体を前記処理容器内の所定位置に配置した状態で所定の薄膜を作成する第二の工程とを有しており、
第二の工程は、前記処理容器内に所定の原料ガスを供給し、供給された原料ガスを所定の高温に発熱させた発熱体の表面を通過させ、その通過の際の発熱体の表面での原料ガスの分解及び又は活性化により、前記処理容器内に保持された基板に前記所定の薄膜を作成する工程であり、
第一の工程における発熱体の温度は、第二の工程において前記所定の薄膜を作成する際の発熱体の温度よりより高いことを特徴とする化学蒸着方法。 - 前記発熱体は、タングステン、モリブデン又はタンタルよりなるワイヤーを所定の形状に成形したものであることを特徴とする請求項1に記載の化学蒸着方法。
- 前記第一の工程は、前記発熱体を1×10−6Pa以上1Pa以下の圧力の雰囲気に配置し、この状態で前記不純物が蒸発する温度とする工程であることを特徴とする請求項1又は2に記載の化学蒸着方法。
- 前記第一の工程を行うことで、前記第二の工程において作成される前記所定の薄膜への重金属の混入濃度を二次イオン質量分析において1×1017atoms/cc以下とすることを特徴とする請求項1乃至3いずれかに記載の化学蒸着方法。
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