JP2009010279A - 薄膜製造装置 - Google Patents
薄膜製造装置 Download PDFInfo
- Publication number
- JP2009010279A JP2009010279A JP2007172226A JP2007172226A JP2009010279A JP 2009010279 A JP2009010279 A JP 2009010279A JP 2007172226 A JP2007172226 A JP 2007172226A JP 2007172226 A JP2007172226 A JP 2007172226A JP 2009010279 A JP2009010279 A JP 2009010279A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- thin film
- susceptor
- film manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 abstract description 22
- 238000007599 discharging Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 113
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
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- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007172226A JP2009010279A (ja) | 2007-06-29 | 2007-06-29 | 薄膜製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007172226A JP2009010279A (ja) | 2007-06-29 | 2007-06-29 | 薄膜製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009010279A true JP2009010279A (ja) | 2009-01-15 |
| JP2009010279A5 JP2009010279A5 (cg-RX-API-DMAC7.html) | 2010-03-18 |
Family
ID=40325052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007172226A Pending JP2009010279A (ja) | 2007-06-29 | 2007-06-29 | 薄膜製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009010279A (cg-RX-API-DMAC7.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015053416A (ja) * | 2013-09-09 | 2015-03-19 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法および製造装置および基板のクリーニング方法 |
| JP2015063723A (ja) * | 2013-09-24 | 2015-04-09 | テルモ株式会社 | コーティング装置およびステント製造方法 |
| CN105970188A (zh) * | 2016-07-11 | 2016-09-28 | 中山德华芯片技术有限公司 | 一种旋转圆盘式mocvd反应室的进气结构 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044125A (ja) * | 1999-07-29 | 2001-02-16 | Applied Materials Inc | エピタキシャル成長装置及び方法 |
| JP2004288900A (ja) * | 2003-03-24 | 2004-10-14 | Tokyo Electron Ltd | 基板処理装置および基板処理方法、ガスノズル |
-
2007
- 2007-06-29 JP JP2007172226A patent/JP2009010279A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044125A (ja) * | 1999-07-29 | 2001-02-16 | Applied Materials Inc | エピタキシャル成長装置及び方法 |
| JP2004288900A (ja) * | 2003-03-24 | 2004-10-14 | Tokyo Electron Ltd | 基板処理装置および基板処理方法、ガスノズル |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015053416A (ja) * | 2013-09-09 | 2015-03-19 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子の製造方法および製造装置および基板のクリーニング方法 |
| JP2015063723A (ja) * | 2013-09-24 | 2015-04-09 | テルモ株式会社 | コーティング装置およびステント製造方法 |
| CN105970188A (zh) * | 2016-07-11 | 2016-09-28 | 中山德华芯片技术有限公司 | 一种旋转圆盘式mocvd反应室的进气结构 |
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