JP2009004629A - 多結晶半導体膜形成方法及び多結晶半導体膜形成装置 - Google Patents

多結晶半導体膜形成方法及び多結晶半導体膜形成装置 Download PDF

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Publication number
JP2009004629A
JP2009004629A JP2007165299A JP2007165299A JP2009004629A JP 2009004629 A JP2009004629 A JP 2009004629A JP 2007165299 A JP2007165299 A JP 2007165299A JP 2007165299 A JP2007165299 A JP 2007165299A JP 2009004629 A JP2009004629 A JP 2009004629A
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semiconductor film
amorphous semiconductor
heat treatment
crystal nuclei
laser
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JP2007165299A
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Japanese (ja)
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JP2009004629A5 (https=
Inventor
Kenichiro Nishida
健一郎 西田
Ryusuke Kawakami
隆介 川上
Norihito Kawaguchi
紀仁 河口
Miyuki Masaki
みゆき 正木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2009004629A5 publication Critical patent/JP2009004629A5/ja
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JP2007165299A 2007-06-22 2007-06-22 多結晶半導体膜形成方法及び多結晶半導体膜形成装置 Withdrawn JP2009004629A (ja)

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JP2009004629A5 JP2009004629A5 (https=) 2010-05-20

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011061991A1 (ja) * 2009-11-20 2011-05-26 株式会社日本製鋼所 結晶半導体膜の製造方法
JP2011181842A (ja) * 2010-03-03 2011-09-15 Toshiba Corp 半導体装置の製造方法
CN104051269A (zh) * 2013-03-13 2014-09-17 格罗方德半导体公司 基于非晶化工艺及热处理在凹部中形成有内埋式应变诱发性材料的晶体管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132212A (ja) * 1990-09-25 1992-05-06 Fuji Xerox Co Ltd 半導体膜の製造方法
JPH0738118A (ja) * 1992-12-22 1995-02-07 Korea Electron Telecommun 薄膜トランジスタの製造方法
JPH09156916A (ja) * 1995-11-29 1997-06-17 Semiconductor Energy Lab Co Ltd 多結晶珪素作製装置およびその動作方法
JP2000232066A (ja) * 1999-02-11 2000-08-22 Sharp Corp 半導体基板の製造方法
JP2001051301A (ja) * 1999-08-13 2001-02-23 Sony Corp 液晶表示パネルの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04132212A (ja) * 1990-09-25 1992-05-06 Fuji Xerox Co Ltd 半導体膜の製造方法
JPH0738118A (ja) * 1992-12-22 1995-02-07 Korea Electron Telecommun 薄膜トランジスタの製造方法
JPH09156916A (ja) * 1995-11-29 1997-06-17 Semiconductor Energy Lab Co Ltd 多結晶珪素作製装置およびその動作方法
JP2000232066A (ja) * 1999-02-11 2000-08-22 Sharp Corp 半導体基板の製造方法
JP2001051301A (ja) * 1999-08-13 2001-02-23 Sony Corp 液晶表示パネルの製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011061991A1 (ja) * 2009-11-20 2011-05-26 株式会社日本製鋼所 結晶半導体膜の製造方法
JP2011108987A (ja) * 2009-11-20 2011-06-02 Japan Steel Works Ltd:The 結晶半導体膜の製造方法
TWI457989B (zh) * 2009-11-20 2014-10-21 日本製鋼所股份有限公司 結晶半導體膜的製造方法
JP2011181842A (ja) * 2010-03-03 2011-09-15 Toshiba Corp 半導体装置の製造方法
US8759205B2 (en) 2010-03-03 2014-06-24 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing semiconductor device
CN104051269A (zh) * 2013-03-13 2014-09-17 格罗方德半导体公司 基于非晶化工艺及热处理在凹部中形成有内埋式应变诱发性材料的晶体管

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