JP2009004629A5 - - Google Patents

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Publication number
JP2009004629A5
JP2009004629A5 JP2007165299A JP2007165299A JP2009004629A5 JP 2009004629 A5 JP2009004629 A5 JP 2009004629A5 JP 2007165299 A JP2007165299 A JP 2007165299A JP 2007165299 A JP2007165299 A JP 2007165299A JP 2009004629 A5 JP2009004629 A5 JP 2009004629A5
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JP
Japan
Prior art keywords
semiconductor film
amorphous semiconductor
forming
amorphous
melted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007165299A
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English (en)
Japanese (ja)
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JP2009004629A (ja
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Publication date
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Priority to JP2007165299A priority Critical patent/JP2009004629A/ja
Priority claimed from JP2007165299A external-priority patent/JP2009004629A/ja
Publication of JP2009004629A publication Critical patent/JP2009004629A/ja
Publication of JP2009004629A5 publication Critical patent/JP2009004629A5/ja
Withdrawn legal-status Critical Current

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JP2007165299A 2007-06-22 2007-06-22 多結晶半導体膜形成方法及び多結晶半導体膜形成装置 Withdrawn JP2009004629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007165299A JP2009004629A (ja) 2007-06-22 2007-06-22 多結晶半導体膜形成方法及び多結晶半導体膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007165299A JP2009004629A (ja) 2007-06-22 2007-06-22 多結晶半導体膜形成方法及び多結晶半導体膜形成装置

Publications (2)

Publication Number Publication Date
JP2009004629A JP2009004629A (ja) 2009-01-08
JP2009004629A5 true JP2009004629A5 (https=) 2010-05-20

Family

ID=40320678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007165299A Withdrawn JP2009004629A (ja) 2007-06-22 2007-06-22 多結晶半導体膜形成方法及び多結晶半導体膜形成装置

Country Status (1)

Country Link
JP (1) JP2009004629A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4947667B2 (ja) * 2009-11-20 2012-06-06 株式会社日本製鋼所 結晶半導体膜の製造方法
JP5433462B2 (ja) * 2010-03-03 2014-03-05 株式会社東芝 半導体装置の製造方法
US8951877B2 (en) * 2013-03-13 2015-02-10 Globalfoundries Inc. Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2861345B2 (ja) * 1990-09-25 1999-02-24 富士ゼロックス株式会社 半導体膜の製造方法
JPH0738118A (ja) * 1992-12-22 1995-02-07 Korea Electron Telecommun 薄膜トランジスタの製造方法
JP3977455B2 (ja) * 1995-11-29 2007-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000232066A (ja) * 1999-02-11 2000-08-22 Sharp Corp 半導体基板の製造方法
JP2001051301A (ja) * 1999-08-13 2001-02-23 Sony Corp 液晶表示パネルの製造方法

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