JP2008546553A5 - - Google Patents

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Publication number
JP2008546553A5
JP2008546553A5 JP2008518238A JP2008518238A JP2008546553A5 JP 2008546553 A5 JP2008546553 A5 JP 2008546553A5 JP 2008518238 A JP2008518238 A JP 2008518238A JP 2008518238 A JP2008518238 A JP 2008518238A JP 2008546553 A5 JP2008546553 A5 JP 2008546553A5
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JP
Japan
Prior art keywords
cap
layer
handle layer
handle
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008518238A
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English (en)
Japanese (ja)
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JP2008546553A (ja
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Publication date
Priority claimed from US11/158,793 external-priority patent/US7316965B2/en
Application filed filed Critical
Publication of JP2008546553A publication Critical patent/JP2008546553A/ja
Publication of JP2008546553A5 publication Critical patent/JP2008546553A5/ja
Pending legal-status Critical Current

Links

JP2008518238A 2005-06-21 2006-06-13 キャップを備えたｍｅｍｓ用基板コンタクト及び同基板コンタクトをウェハレベルにて形成する方法 Pending JP2008546553A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/158,793 US7316965B2 (en) 2005-06-21 2005-06-21 Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
PCT/US2006/023122 WO2007001856A2 (en) 2005-06-21 2006-06-13 Substrate contact for a capped mems and method of making the substrate contact at the wafer level

Publications (2)

Publication Number Publication Date
JP2008546553A JP2008546553A (ja) 2008-12-25
JP2008546553A5 true JP2008546553A5 (enExample) 2009-07-09

Family

ID=37573898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518238A Pending JP2008546553A (ja) 2005-06-21 2006-06-13 キャップを備えたｍｅｍｓ用基板コンタクト及び同基板コンタクトをウェハレベルにて形成する方法

Country Status (5)

Country Link
US (1) US7316965B2 (enExample)
EP (1) EP1897122A4 (enExample)
JP (1) JP2008546553A (enExample)
TW (1) TWI399793B (enExample)
WO (1) WO2007001856A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008514968A (ja) * 2004-09-27 2008-05-08 コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツング 回転速度センサ
US7378293B2 (en) * 2006-03-22 2008-05-27 Texas Instruments Incorporated MEMS fabrication method
US7779689B2 (en) * 2007-02-21 2010-08-24 Freescale Semiconductor, Inc. Multiple axis transducer with multiple sensing range capability
US7893798B2 (en) * 2007-05-09 2011-02-22 Innovative Micro Technology Dual substrate MEMS plate switch and method of manufacture
US8466760B2 (en) * 2007-05-09 2013-06-18 Innovative Micro Technology Configurable power supply using MEMS switch
US8264307B2 (en) * 2007-05-09 2012-09-11 Innovative Micro Technology Dual substrate MEMS plate switch and method of manufacture
US7651889B2 (en) 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
US7500392B1 (en) 2007-10-11 2009-03-10 Memsys, Inc. Solid state microanemometer device and method of fabrication
US8257985B2 (en) 2008-09-25 2012-09-04 Texas Instruments Incorporated MEMS device and fabrication method
US7943489B2 (en) * 2008-09-25 2011-05-17 Texas Instruments Incorporated Bonded wafer assembly system and method
DE102008043796B4 (de) * 2008-11-17 2023-12-21 Robert Bosch Gmbh Drehratensensor
JP5607317B2 (ja) * 2009-06-17 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体ウェハ
US8716051B2 (en) * 2010-10-21 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device with release aperture
JP2012195829A (ja) 2011-03-17 2012-10-11 Seiko Epson Corp 発振回路
JP2012222718A (ja) 2011-04-13 2012-11-12 Seiko Epson Corp 発振器
JP5708235B2 (ja) * 2011-05-18 2015-04-30 大日本印刷株式会社 Ｍｅｍｓデバイス
US9425571B2 (en) * 2012-01-06 2016-08-23 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form electrical interconnects on ophthalmic devices
TWI522308B (zh) 2012-06-22 2016-02-21 矽品精密工業股份有限公司 具微機電元件之封裝結構及其製法
US8932893B2 (en) * 2013-04-23 2015-01-13 Freescale Semiconductor, Inc. Method of fabricating MEMS device having release etch stop layer
US9346671B2 (en) * 2014-02-04 2016-05-24 Freescale Semiconductor, Inc. Shielding MEMS structures during wafer dicing

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
JP3489117B2 (ja) * 1997-09-10 2004-01-19 松下電器産業株式会社 加速度センサ及びその製造方法
US6271060B1 (en) * 1999-09-13 2001-08-07 Vishay Intertechnology, Inc. Process of fabricating a chip scale surface mount package for semiconductor device
JP2003007652A (ja) * 2001-06-26 2003-01-10 Mitsubishi Electric Corp 半導体チップの製造方法
US6790709B2 (en) * 2001-11-30 2004-09-14 Intel Corporation Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices
JP2003229383A (ja) * 2002-02-01 2003-08-15 Tokyo Seimitsu Co Ltd ダイシング装置及びダイシング方法
DE10253163B4 (de) * 2002-11-14 2015-07-23 Epcos Ag Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung
KR100471153B1 (ko) * 2002-11-27 2005-03-10 삼성전기주식회사 Ｓｏｉ웨이퍼를 이용한 mems 디바이스의 제조 및 접지 방법
JP3905041B2 (ja) * 2003-01-07 2007-04-18 株式会社日立製作所 電子デバイスおよびその製造方法
US7030469B2 (en) * 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
JP2007516602A (ja) * 2003-09-26 2007-06-21 テッセラ，インコーポレイテッド 流動可能な伝導媒体を含むキャップ付きチップの製造構造および方法
DE10352002A1 (de) * 2003-11-07 2005-06-09 Robert Bosch Gmbh Sensormodul
US20060286706A1 (en) * 2005-06-21 2006-12-21 Salian Arvind S Method of making a substrate contact for a capped MEMS at the package level

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