JP2008546553A - キャップを備えたｍｅｍｓ用基板コンタクト及び同基板コンタクトをウェハレベルにて形成する方法 - Google Patents

キャップを備えたｍｅｍｓ用基板コンタクト及び同基板コンタクトをウェハレベルにて形成する方法 Download PDF

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Publication number
JP2008546553A
JP2008546553A JP2008518238A JP2008518238A JP2008546553A JP 2008546553 A JP2008546553 A JP 2008546553A JP 2008518238 A JP2008518238 A JP 2008518238A JP 2008518238 A JP2008518238 A JP 2008518238A JP 2008546553 A JP2008546553 A JP 2008546553A
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Japan
Prior art keywords
cap
cut
substrate
forming
die region
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Pending
Application number
JP2008518238A
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English (en)
Japanese (ja)
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JP2008546553A5 (enExample
Inventor
アール． フーパー、スティーブン
ディ． デサイ、ヘマント
ジー． マクドナルド、ウィリアム
エス． サリアン、アービンド
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NXP USA Inc
Original Assignee
NXP USA Inc
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Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2008546553A publication Critical patent/JP2008546553A/ja
Publication of JP2008546553A5 publication Critical patent/JP2008546553A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/098—Arrangements not provided for in groups B81B2207/092 - B81B2207/097
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
JP2008518238A 2005-06-21 2006-06-13 キャップを備えたｍｅｍｓ用基板コンタクト及び同基板コンタクトをウェハレベルにて形成する方法 Pending JP2008546553A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/158,793 US7316965B2 (en) 2005-06-21 2005-06-21 Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
PCT/US2006/023122 WO2007001856A2 (en) 2005-06-21 2006-06-13 Substrate contact for a capped mems and method of making the substrate contact at the wafer level

Publications (2)

Publication Number Publication Date
JP2008546553A true JP2008546553A (ja) 2008-12-25
JP2008546553A5 JP2008546553A5 (enExample) 2009-07-09

Family

ID=37573898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518238A Pending JP2008546553A (ja) 2005-06-21 2006-06-13 キャップを備えたｍｅｍｓ用基板コンタクト及び同基板コンタクトをウェハレベルにて形成する方法

Country Status (5)

Country Link
US (1) US7316965B2 (enExample)
EP (1) EP1897122A4 (enExample)
JP (1) JP2008546553A (enExample)
TW (1) TWI399793B (enExample)
WO (1) WO2007001856A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012242223A (ja) * 2011-05-18 2012-12-10 Dainippon Printing Co Ltd Ｍｅｍｓデバイス
US8648663B2 (en) 2011-04-13 2014-02-11 Seiko Epson Corporation Oscillator having a plurality of switchable MEMS vibrators
US8669824B2 (en) 2011-03-17 2014-03-11 Seiko Epson Corporation Oscillator having a plurality of switchable MEMS vibrators

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101027536B (zh) * 2004-09-27 2013-03-20 康蒂特米克微电子有限公司 旋转速度传感器
US7378293B2 (en) * 2006-03-22 2008-05-27 Texas Instruments Incorporated MEMS fabrication method
US7779689B2 (en) * 2007-02-21 2010-08-24 Freescale Semiconductor, Inc. Multiple axis transducer with multiple sensing range capability
US8466760B2 (en) * 2007-05-09 2013-06-18 Innovative Micro Technology Configurable power supply using MEMS switch
US8264307B2 (en) * 2007-05-09 2012-09-11 Innovative Micro Technology Dual substrate MEMS plate switch and method of manufacture
US7893798B2 (en) * 2007-05-09 2011-02-22 Innovative Micro Technology Dual substrate MEMS plate switch and method of manufacture
US7651889B2 (en) 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
US7500392B1 (en) 2007-10-11 2009-03-10 Memsys, Inc. Solid state microanemometer device and method of fabrication
US7943489B2 (en) * 2008-09-25 2011-05-17 Texas Instruments Incorporated Bonded wafer assembly system and method
US8257985B2 (en) 2008-09-25 2012-09-04 Texas Instruments Incorporated MEMS device and fabrication method
DE102008043796B4 (de) * 2008-11-17 2023-12-21 Robert Bosch Gmbh Drehratensensor
JP5607317B2 (ja) 2009-06-17 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体ウェハ
US8716051B2 (en) * 2010-10-21 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device with release aperture
US9425571B2 (en) * 2012-01-06 2016-08-23 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form electrical interconnects on ophthalmic devices
TWI522308B (zh) 2012-06-22 2016-02-21 矽品精密工業股份有限公司 具微機電元件之封裝結構及其製法
US8932893B2 (en) * 2013-04-23 2015-01-13 Freescale Semiconductor, Inc. Method of fabricating MEMS device having release etch stop layer
US9346671B2 (en) * 2014-02-04 2016-05-24 Freescale Semiconductor, Inc. Shielding MEMS structures during wafer dicing

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999013343A1 (en) * 1997-09-10 1999-03-18 Matsushita Electric Industrial Co., Ltd. Acceleration sensor and method of producing the same
JP2003007652A (ja) * 2001-06-26 2003-01-10 Mitsubishi Electric Corp 半導体チップの製造方法
JP2003229383A (ja) * 2002-02-01 2003-08-15 Tokyo Seimitsu Co Ltd ダイシング装置及びダイシング方法
WO2004044980A2 (de) * 2002-11-14 2004-05-27 Epcos Ag Bauelement mit hermetischer verkapselung und waferscale verfahren zur herstellung
US20040099909A1 (en) * 2002-11-27 2004-05-27 Park Kyu Yeon Micro-electro mechanical systems (MEMS) device using silicon on insulator (SOI) wafer, and method of fabricating and grounding the same
JP2004214469A (ja) * 2003-01-07 2004-07-29 Hitachi Ltd 電子デバイスおよびその製造方法
WO2005031861A1 (en) * 2003-09-26 2005-04-07 Tessera, Inc. Structure and method of making capped chips including a flowable conductive medium
JP2008543594A (ja) * 2005-06-21 2008-12-04 フリースケール セミコンダクター インコーポレイテッド パッケージレベルでキャップ付きのｍｅｍｓ用の基板接点を構築する方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
US6271060B1 (en) * 1999-09-13 2001-08-07 Vishay Intertechnology, Inc. Process of fabricating a chip scale surface mount package for semiconductor device
US6790709B2 (en) * 2001-11-30 2004-09-14 Intel Corporation Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices
US7030469B2 (en) * 2003-09-25 2006-04-18 Freescale Semiconductor, Inc. Method of forming a semiconductor package and structure thereof
DE10352002A1 (de) * 2003-11-07 2005-06-09 Robert Bosch Gmbh Sensormodul

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999013343A1 (en) * 1997-09-10 1999-03-18 Matsushita Electric Industrial Co., Ltd. Acceleration sensor and method of producing the same
JP2003007652A (ja) * 2001-06-26 2003-01-10 Mitsubishi Electric Corp 半導体チップの製造方法
JP2003229383A (ja) * 2002-02-01 2003-08-15 Tokyo Seimitsu Co Ltd ダイシング装置及びダイシング方法
WO2004044980A2 (de) * 2002-11-14 2004-05-27 Epcos Ag Bauelement mit hermetischer verkapselung und waferscale verfahren zur herstellung
US20040099909A1 (en) * 2002-11-27 2004-05-27 Park Kyu Yeon Micro-electro mechanical systems (MEMS) device using silicon on insulator (SOI) wafer, and method of fabricating and grounding the same
JP2004214469A (ja) * 2003-01-07 2004-07-29 Hitachi Ltd 電子デバイスおよびその製造方法
WO2005031861A1 (en) * 2003-09-26 2005-04-07 Tessera, Inc. Structure and method of making capped chips including a flowable conductive medium
JP2008543594A (ja) * 2005-06-21 2008-12-04 フリースケール セミコンダクター インコーポレイテッド パッケージレベルでキャップ付きのｍｅｍｓ用の基板接点を構築する方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8669824B2 (en) 2011-03-17 2014-03-11 Seiko Epson Corporation Oscillator having a plurality of switchable MEMS vibrators
US8648663B2 (en) 2011-04-13 2014-02-11 Seiko Epson Corporation Oscillator having a plurality of switchable MEMS vibrators
JP2012242223A (ja) * 2011-05-18 2012-12-10 Dainippon Printing Co Ltd Ｍｅｍｓデバイス

Also Published As

Publication number Publication date
US20060286707A1 (en) 2006-12-21
WO2007001856A2 (en) 2007-01-04
TW200710945A (en) 2007-03-16
WO2007001856A3 (en) 2007-12-21
EP1897122A2 (en) 2008-03-12
TWI399793B (zh) 2013-06-21
EP1897122A4 (en) 2013-12-25
US7316965B2 (en) 2008-01-08

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