TWI399793B - 加封微機電系統（ｍｅｍｓ）之基底接觸及在晶圓階段製作該基底接觸之方法 - Google Patents

加封微機電系統（ｍｅｍｓ）之基底接觸及在晶圓階段製作該基底接觸之方法 Download PDF

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Publication number
TWI399793B
TWI399793B TW095121526A TW95121526A TWI399793B TW I399793 B TWI399793 B TW I399793B TW 095121526 A TW095121526 A TW 095121526A TW 95121526 A TW95121526 A TW 95121526A TW I399793 B TWI399793 B TW I399793B
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TW
Taiwan
Prior art keywords
layer
slit
sidewall
substrate
conductive material
Prior art date
Application number
TW095121526A
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English (en)
Chinese (zh)
Other versions
TW200710945A (en
Inventor
Stephen R Hooper
Hemant D Desai
William G Mcdonald
Arvind S Salian
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Freescale Semiconductor Inc
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Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200710945A publication Critical patent/TW200710945A/zh
Application granted granted Critical
Publication of TWI399793B publication Critical patent/TWI399793B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/098—Arrangements not provided for in groups B81B2207/092 - B81B2207/097
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
TW095121526A 2005-06-21 2006-06-16 加封微機電系統（ｍｅｍｓ）之基底接觸及在晶圓階段製作該基底接觸之方法 TWI399793B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/158,793 US7316965B2 (en) 2005-06-21 2005-06-21 Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level

Publications (2)

Publication Number Publication Date
TW200710945A TW200710945A (en) 2007-03-16
TWI399793B true TWI399793B (zh) 2013-06-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW095121526A TWI399793B (zh) 2005-06-21 2006-06-16 加封微機電系統（ｍｅｍｓ）之基底接觸及在晶圓階段製作該基底接觸之方法

Country Status (5)

Country Link
US (1) US7316965B2 (enExample)
EP (1) EP1897122A4 (enExample)
JP (1) JP2008546553A (enExample)
TW (1) TWI399793B (enExample)
WO (1) WO2007001856A2 (enExample)

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CN101027536B (zh) * 2004-09-27 2013-03-20 康蒂特米克微电子有限公司 旋转速度传感器
US7378293B2 (en) * 2006-03-22 2008-05-27 Texas Instruments Incorporated MEMS fabrication method
US7779689B2 (en) * 2007-02-21 2010-08-24 Freescale Semiconductor, Inc. Multiple axis transducer with multiple sensing range capability
US8466760B2 (en) * 2007-05-09 2013-06-18 Innovative Micro Technology Configurable power supply using MEMS switch
US8264307B2 (en) * 2007-05-09 2012-09-11 Innovative Micro Technology Dual substrate MEMS plate switch and method of manufacture
US7893798B2 (en) * 2007-05-09 2011-02-22 Innovative Micro Technology Dual substrate MEMS plate switch and method of manufacture
US7651889B2 (en) 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
US7500392B1 (en) 2007-10-11 2009-03-10 Memsys, Inc. Solid state microanemometer device and method of fabrication
US7943489B2 (en) * 2008-09-25 2011-05-17 Texas Instruments Incorporated Bonded wafer assembly system and method
US8257985B2 (en) 2008-09-25 2012-09-04 Texas Instruments Incorporated MEMS device and fabrication method
DE102008043796B4 (de) * 2008-11-17 2023-12-21 Robert Bosch Gmbh Drehratensensor
JP5607317B2 (ja) 2009-06-17 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体ウェハ
US8716051B2 (en) * 2010-10-21 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device with release aperture
JP2012195829A (ja) 2011-03-17 2012-10-11 Seiko Epson Corp 発振回路
JP2012222718A (ja) 2011-04-13 2012-11-12 Seiko Epson Corp 発振器
JP5708235B2 (ja) * 2011-05-18 2015-04-30 大日本印刷株式会社 Ｍｅｍｓデバイス
US9425571B2 (en) * 2012-01-06 2016-08-23 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form electrical interconnects on ophthalmic devices
TWI522308B (zh) 2012-06-22 2016-02-21 矽品精密工業股份有限公司 具微機電元件之封裝結構及其製法
US8932893B2 (en) * 2013-04-23 2015-01-13 Freescale Semiconductor, Inc. Method of fabricating MEMS device having release etch stop layer
US9346671B2 (en) * 2014-02-04 2016-05-24 Freescale Semiconductor, Inc. Shielding MEMS structures during wafer dicing

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US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
US6790709B2 (en) * 2001-11-30 2004-09-14 Intel Corporation Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices

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US6263735B1 (en) * 1997-09-10 2001-07-24 Matsushita Electric Industrial Co., Ltd. Acceleration sensor
US6271060B1 (en) * 1999-09-13 2001-08-07 Vishay Intertechnology, Inc. Process of fabricating a chip scale surface mount package for semiconductor device
JP2003007652A (ja) * 2001-06-26 2003-01-10 Mitsubishi Electric Corp 半導体チップの製造方法
JP2003229383A (ja) * 2002-02-01 2003-08-15 Tokyo Seimitsu Co Ltd ダイシング装置及びダイシング方法
DE10253163B4 (de) * 2002-11-14 2015-07-23 Epcos Ag Bauelement mit hermetischer Verkapselung und Waferscale Verfahren zur Herstellung
KR100471153B1 (ko) * 2002-11-27 2005-03-10 삼성전기주식회사 Ｓｏｉ웨이퍼를 이용한 mems 디바이스의 제조 및 접지 방법
JP3905041B2 (ja) * 2003-01-07 2007-04-18 株式会社日立製作所 電子デバイスおよびその製造方法
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WO2005031863A1 (en) * 2003-09-26 2005-04-07 Tessera, Inc. Structure and method of making capped chips having vertical interconnects
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US20060286706A1 (en) * 2005-06-21 2006-12-21 Salian Arvind S Method of making a substrate contact for a capped MEMS at the package level

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US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
US6790709B2 (en) * 2001-11-30 2004-09-14 Intel Corporation Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices

Also Published As

Publication number Publication date
US20060286707A1 (en) 2006-12-21
WO2007001856A2 (en) 2007-01-04
TW200710945A (en) 2007-03-16
JP2008546553A (ja) 2008-12-25
WO2007001856A3 (en) 2007-12-21
EP1897122A2 (en) 2008-03-12
EP1897122A4 (en) 2013-12-25
US7316965B2 (en) 2008-01-08

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