JP2008546163A - イオンビーム角度広がりの制御技術 - Google Patents
イオンビーム角度広がりの制御技術 Download PDFInfo
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
- H01J2237/1507—Tilting or rocking beam around an axis substantially at an angle to optical axis dynamically, e.g. to obtain same impinging angle on whole area
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract
【解決手段】イオンビーム角度広がりの制御技術を開示する。一つの特定的な典型的実施形態においては、本技術をイオンビーム角度広がりの制御方法として実現してよい。当該方法には、一以上のイオンビームを二以上の異なる入射角度において基板面に対して導き、それにより、基板面を制御された広がりの入射角度を有するイオンビームへと暴露することを含めてよい。
【選択図】図11
Description
Claims (20)
- イオンビーム角度広がりの制御方法であって、
一以上のイオンビームを二以上の異なる入射角度において一の基板面に対して導き、それにより、複数のイオンビーム入射角度よりなる一の制御された広がりへと前記基板面を暴露すること
を含む、方法。 - 前記二以上の入射角度を、前記一以上のイオンビームの少なくとも一つを一の可変磁場により偏向させることにより導入する、
請求項1に記載の方法。 - 前記二以上の入射角度を、前記一以上のイオンビームの少なくとも一つを一の可変静電場により偏向させることにより導入する、
請求項1に記載の方法。 - 前記二以上の入射角度を、前記基板面を前記一以上のイオンビームの少なくとも一つに対する二以上の異なる角度へと傾斜させることにより導入する、
請求項1に記載の方法。 - 前記基板面を一以上の所定方位へと回転させること
を更に含む、請求項1に記載の方法。 - 前記二以上の異なる入射角度を、前記基板面に対する一以上の走査の間に導入する、
請求項1に記載の方法。 - 前記二以上の異なる入射角度は、複数の実質的に連続的なイオンビーム入射角度を含む、
請求項1に記載の方法。 - 前記二以上の異なる入射角度は、複数のインクリメンタルに異なるイオンビーム入射角度を含む、
請求項1に記載の方法。 - 一のイオンビームにより、一の第一レートにおいて前記基板面を走査することと、
前記イオンビームの一の入射角度を、前記第一レートより実質的に速い一の第二レートにおいて変化させること
を更に含む、請求項1に記載の方法。 - 二以上のイオンビームにより、同時に前記基板面を走査することを更に含み、該二以上のイオンビームのそれぞれは、一の所定の入射角度において前記基板面に衝突する、
請求項1に記載の方法。 - 請求項1に記載の前記方法を実施するための一のコンピュータ処理を少なくとも一つのプロセッサに実行するよう指示する、該少なくとも一つのプロセッサにより読み取り可能に構成された複数の指示を含む一のコンピュータプログラムを伝達する少なくとも一つの搬送波により具現化される少なくとも一つの信号。
- 請求項1に記載の前記方法を実施するための一のコンピュータ処理を少なくとも一つのプロセッサに実行するよう指示する、該少なくとも一つのプロセッサにより読み取り可能に構成された複数の指示を含む一のコンピュータプログラムを記憶する少なくとも一つのプロセッサ読み取り可能なキャリア。
- イオンビーム角度広がりの制御システムであって、
一以上のイオンビームを二以上の異なる入射角度において一の基板面に対して導き、それにより、複数のイオンビーム入射角度よりなる一の制御された広がりへと前記基板面を暴露する手段
を含む、システム。 - 前記二以上の入射角度を、前記一以上のイオンビームの少なくとも一つを一の可変磁場により偏向させることにより導入する、
請求項13に記載のシステム。 - 前記二以上の入射角度を、前記一以上のイオンビームの少なくとも一つを一の可変静電場により偏向させることにより導入する、
請求項13に記載のシステム。 - 前記二以上の入射角度を、前記基板面を前記一以上のイオンビームの少なくとも一つに対する二以上の異なる角度へと傾斜させることにより導入する、
請求項13に記載のシステム。 - 前記基板面を一以上の所定方位へと回転させる手段
を更に含む、請求項13に記載のシステム。 - 前記二以上の異なる入射角度を、前記基板面に対する一以上の走査の間に導入する、
請求項13に記載のシステム。 - 一のイオンビームにより一の第一レートにおいて前記基板面を走査する手段と、
前記イオンビームの一の入射角度を、前記第一レートより実質的に速い一の第二レートにおいて変化させる手段と
を更に含む、請求項13に記載のシステム。 - 二以上のイオンビームにより、同時に前記基板面を走査する手段を更に含み、該二以上のイオンビームのそれぞれは、一の所定の入射角度において前記基板面に衝突する、
請求項13に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/145,949 US7868305B2 (en) | 2005-03-16 | 2005-06-07 | Technique for ion beam angle spread control |
US11/145,949 | 2005-06-07 | ||
PCT/US2006/022164 WO2006133309A2 (en) | 2005-06-07 | 2006-06-07 | Technique for ion beam angle spread control |
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JP2008546163A true JP2008546163A (ja) | 2008-12-18 |
JP5215846B2 JP5215846B2 (ja) | 2013-06-19 |
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JP2008515884A Active JP5215846B2 (ja) | 2005-06-07 | 2006-06-07 | イオンビーム角度広がりの制御技術 |
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Country | Link |
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US (1) | US7868305B2 (ja) |
JP (1) | JP5215846B2 (ja) |
KR (1) | KR101271502B1 (ja) |
CN (1) | CN101189696B (ja) |
TW (1) | TWI390581B (ja) |
WO (1) | WO2006133309A2 (ja) |
Cited By (1)
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KR20150143328A (ko) * | 2014-06-13 | 2015-12-23 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 빔조사장치 및 빔조사방법 |
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US7391038B2 (en) * | 2006-03-21 | 2008-06-24 | Varian Semiconductor Equipment Associates, Inc. | Technique for isocentric ion beam scanning |
US7883909B2 (en) * | 2006-12-28 | 2011-02-08 | Texas Instruments Incorporated | Method to measure ion beam angle |
US20080245957A1 (en) * | 2007-04-03 | 2008-10-09 | Atul Gupta | Tuning an ion implanter for optimal performance |
CN101838797B (zh) * | 2009-12-18 | 2012-07-04 | 上海凯世通半导体有限公司 | 离子注入方法 |
US8664100B2 (en) | 2010-07-07 | 2014-03-04 | Varian Semiconductor Equipment Associates, Inc. | Manufacturing high efficiency solar cell with directional doping |
US20130164454A1 (en) * | 2011-04-07 | 2013-06-27 | Seagate Technology Llc | Methods of forming layers |
US9103540B2 (en) | 2011-04-21 | 2015-08-11 | Optalite Technologies, Inc. | High efficiency LED lighting system with thermal diffusion |
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US9159810B2 (en) * | 2012-08-22 | 2015-10-13 | Advanced Ion Beam Technology, Inc. | Doping a non-planar semiconductor device |
JP6271235B2 (ja) | 2013-01-24 | 2018-01-31 | キヤノンアネルバ株式会社 | フィンfetの製造方法およびデバイスの製造方法 |
US9340870B2 (en) | 2013-01-25 | 2016-05-17 | Advanced Ion Beam Technology, Inc. | Magnetic field fluctuation for beam smoothing |
US9280989B2 (en) | 2013-06-21 | 2016-03-08 | Seagate Technology Llc | Magnetic devices including near field transducer |
US20160002784A1 (en) * | 2014-07-07 | 2016-01-07 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for depositing a monolayer on a three dimensional structure |
US20180315605A1 (en) * | 2017-04-28 | 2018-11-01 | Advanced Ion Beam Technology, Inc. | Method for Ion Implantation |
JP2022512366A (ja) | 2018-12-17 | 2022-02-03 | アプライド マテリアルズ インコーポレイテッド | 傾斜回折格子のローリングkベクトルの調整 |
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2005
- 2005-06-07 US US11/145,949 patent/US7868305B2/en active Active
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- 2006-06-07 JP JP2008515884A patent/JP5215846B2/ja active Active
- 2006-06-07 TW TW095120176A patent/TWI390581B/zh active
- 2006-06-07 KR KR1020077031022A patent/KR101271502B1/ko active IP Right Grant
- 2006-06-07 CN CN2006800198849A patent/CN101189696B/zh active Active
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JP2003133252A (ja) * | 2001-10-26 | 2003-05-09 | Semiconductor Energy Lab Co Ltd | ビームの集束方法およびドーピング装置、並びに半導体装置の作製方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20150143328A (ko) * | 2014-06-13 | 2015-12-23 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 빔조사장치 및 빔조사방법 |
JP2016004614A (ja) * | 2014-06-13 | 2016-01-12 | 住友重機械イオンテクノロジー株式会社 | ビーム照射装置及びビーム照射方法 |
KR102403769B1 (ko) * | 2014-06-13 | 2022-05-30 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 빔조사장치 및 빔조사방법 |
Also Published As
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KR101271502B1 (ko) | 2013-06-05 |
WO2006133309A3 (en) | 2007-11-15 |
TW200727324A (en) | 2007-07-16 |
KR20080019260A (ko) | 2008-03-03 |
JP5215846B2 (ja) | 2013-06-19 |
CN101189696A (zh) | 2008-05-28 |
WO2006133309A2 (en) | 2006-12-14 |
TWI390581B (zh) | 2013-03-21 |
US20060208202A1 (en) | 2006-09-21 |
US7868305B2 (en) | 2011-01-11 |
CN101189696B (zh) | 2011-04-06 |
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