JP2008546150A - 光電陰極構造及び使用方法 - Google Patents
光電陰極構造及び使用方法 Download PDFInfo
- Publication number
- JP2008546150A JP2008546150A JP2008514702A JP2008514702A JP2008546150A JP 2008546150 A JP2008546150 A JP 2008546150A JP 2008514702 A JP2008514702 A JP 2008514702A JP 2008514702 A JP2008514702 A JP 2008514702A JP 2008546150 A JP2008546150 A JP 2008546150A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photocathode
- type
- light
- optical window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- 230000004297 night vision Effects 0.000 claims abstract description 45
- 238000003384 imaging method Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 249
- 230000003287 optical effect Effects 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 claims description 49
- 230000003595 spectral effect Effects 0.000 claims description 44
- 230000004044 response Effects 0.000 claims description 31
- 230000031700 light absorption Effects 0.000 claims description 25
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 239000006096 absorbing agent Substances 0.000 claims description 9
- 210000000601 blood cell Anatomy 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000001931 thermography Methods 0.000 claims description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 230000008033 biological extinction Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000725 suspension Substances 0.000 claims description 4
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 238000004458 analytical method Methods 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 230000004907 flux Effects 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 241000196324 Embryophyta Species 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 206010036618 Premenstrual syndrome Diseases 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 241000769223 Thenea Species 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000000684 flow cytometry Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002801 charged material Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004163 cytometry Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B23/00—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
- G02B23/12—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices with means for image conversion or intensification
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
Description
13 光源
16 二色光電陰極
17 光電子増倍管
18 血球分離装置
19 試料管
20 コンピュータ制御ユニット
21 センサ
22 ヘルメット
23 カラー光電陰極
25 ディスプレイ
26 熱イメージング用レンズ系
27 暗視チャネル用レンズ系
Claims (38)
- 光学ウィンドウ層及び吸光層の間のヘテロ接合を具え、該ヘテロ接合が3kTを上回る伝導帯バリアを有する半導体光電陰極であって、前記バリアを取り除くために前記ヘテロ接合を横切る電界を生じさせる、前記光電陰極に対する電気的接続を更に具える半導体光電陰極。
- 前記吸収層に接触しない側で前記光学ウィンドウ層上に配置されたショットキー接合を含み、該ショットキー接合が前記光学ウィンドウ層と整流接合を形成している請求項1記載のヘテロ接合半導体光電陰極。
- 前記光学ウィンドウ層がp型にドープされている請求項2記載のヘテロ接合半導体光電陰極。
- 前記光学ウィンドウ層がp型光学ウィンドウ層の上に配置されたn型光学ウィンドウ層を含み、前記ヘテロ接合が前記p型光学ウィンドウ層及び前記吸光層の間に生成され、前記p型からn型へのインタフェースが整流接合を形成している請求項1記載のヘテロ接合半導体光電陰極。
- 前記吸光層がp型にドープされている請求項4記載のヘテロ接合半導体光電陰極。
- n型光学ウィンドウ層にn型オーム接合が形成され、p型吸光層にp型オーム接合が形成されている請求項5記載のヘテロ接合半導体光電陰極。
- 前記光学ウィンドウ層におけるp型部分の厚み及びドーピングが、整流接合を横切るバイアスが印加されないように定められ、p型部分における少なくとも100オングストロームオーダーの領域が非空乏状態に維持されている請求項6記載のヘテロ接合半導体光電陰極。
- 前記第1の光学ウィンドウがTE光電陰極の透明基材を具える請求項4記載のヘテロ接合半導体光電陰極。
- 前記第1の光学ウィンドウがn型AlGaAsよりなる請求項4記載のヘテロ接合半導体光電陰極。
- 第2のp型吸光層が前記p型吸光層上に配置され、該p型吸光層が光学ウィンドウ層上に配置され、該光学ウィンドウ層が前記整流接合上に配置されている請求項4記載のヘテロ接合半導体。
- 前記第2のp型吸光層がGaAsよりなる請求項10記載のヘテロ接合半導体。
- n型光学ウィンドウ層を有する前記第1の透明な光学ウィンドウ層が反射防止コーティング上に配置され、該反射防止コーティングがガラス支持層上に配置されている請求項4記載の光電陰極構造。
- ガラス支持ウィンドウと、該ガラス支持ウィンドウの表面上に配置した反射防止コーティングと、該反射防止コーティング上に配置したn型光学ウィンドウ層と、該n型光学ウィンドウ層上に配置したp型光学ウィンドウ層と、該p型光学ウィンドウ層に配置され、p型光学ウィンドウ層から吸光層に至る遷移層と、該p型遷移層上に配置した第1のp型吸光層と、該第1のp型吸光層上に配置したp型吸光1,2遷移層と、該p型吸光1,2遷移層上に配置した第2のp型吸光層と、該第2のp型吸光層の開放表面領域上及び前記n型光学ウィンドウ層の開放表面上に配置した電気オーム接合とを具える負電子親和型光電陰極。
- 前記第2のp型吸光層の開放表面領域上に配置された電気的オーム接合が、p型オーム接合よりなる請求項13記載の光電陰極。
- 前記n型光学ウィンドウ層上に配置された電気オーム接合が、n型オーム接合よりなる請求項13記載の光電陰極。
- 光起電力応答が電気的に変更可能な移動電子型光電陰極であって、反射防止コーティング層と、該反射防止コーティング層上に配置したn型光学ウィンドウ層と、該n型光学ウィンドウ層上に配置したp型光学ウィンドウ層と、該p型光学ウィンドウ層上に配置した第1のp型吸光層と、該第1のp型吸光層上に配置した吸光p型1,2遷移層と、該吸光p型1,2遷移層上に配置した第2のp型吸光層と、該第2のp型吸光層上に配置したエミッタ層と、前記n型光学ウィンドウ層及び前記第2のp型吸光層の周辺に個別的に配置した2個の電気接点と、前記エミッタ層上でショットキー接合として機能する第3の電気接点とを具える光電陰極。
- 二色光電陰極を有する光電子増倍管と、被検懸濁液を導入し、かつ調整する供給ステーションと、該供給ステーションに接続され、該供給ステーションからの懸濁液を流す検査管と、該検査管の小断面を照射する光源と、前記検査管を流れる試料からの散乱光又は発光を受光し、その受光した光を、分析のために前記光電子増倍管に照射する光学系とを具える流動血球計測システム。
- 光学ウィンドウ層及び吸光層の間のヘテロ接合を含み、該ヘテロ接合が3kTを上回る伝導帯バリアを有し、該バリアを取り除くために前記ヘテロ接合を横切る電界を生じさせる電気的接続を更に含む半導体光電陰極と、該光電陰極の入力面上にイメージを生成する集光光学系と、前記光電陰極からの信号出力を増幅して、前記光電陰極が受光した微光イメージに対応する可視イメージ又は電子イメージを形成する電子利得段とを具える暗視システム。
- 光学ウィンドウ層及び吸光層の間のヘテロ接合を含み、該ヘテロ接合が3kTを上回る伝導帯バリアを有し、該バリアを取り除くために前記ヘテロ接合を横切る電界を生じさせる電気的接続を更に含む半導体光電陰極を設けた双眼装置と、該光電陰極により受けられた入力を電子利得段に供給して、前記光電陰極が受光した微光イメージに対応する可視イメージ又は電子イメージを形成する集光光学系とを具える暗視システム。
- サーマル・イメージング素子と、画像処理手段とを含み、サーマル・イメージ及び微光イメージを統合して複合観察可能とした請求項18記載の暗視装置。
- 基体層としての第1のn型光学ウィンドウ層と、バッファ層としての第2のn型光学ウィンドウ層と、p型光学ウィンドウ層と、前記n型光学ウィンドウ層及びp型光学ウィンドウ層の間に形成された整流接合と、第1のp型吸光層と、p型吸光1,2遷移層と、第2のp型吸光層と、吸光層‐エミッタ間の遷移層と、エミッタ層とを具えるヘテロ接合半導体TE光電陰極。
- 前記第1のn型光窓の表面上に配置したオーム接合と、前記第2のp型吸光層の露出面上に配置したオーム接合とを更に具える請求項21記載のヘテロ接合半導体TE光電陰極。
- エミッタ層の表面上にショットキー接合を更に具える請求項22記載のヘテロ接合半導体TE光電陰極。
- 前記ショットキー接合が周辺近傍に配置され、前記光電陰極上に大きな非妨害アクティブ領域を維持する請求項23記載のヘテロ接合半導体TE光電陰極。
- 前記基板面がInPよりなり、前記バッファ層がInPよりなる極薄層を含む請求項21記載のヘテロ接合半導体TE光電陰極。
- 前記p型光窓がInPよりなり、前記第1のp型吸光層がInGaAsPよりなる請求項21記載のヘテロ接合半導体TE光電陰極。
- 前記エミッタ層が、5E16/cm3を超えてドープされたInPよりなる請求項26記載のヘテロ接合半導体TE光電陰極。
- n型光学ウィンドウ層と、第1のp型光学ウィンドウ層、第2のp型光学ウィンドウ層と、軽くドープされた第1のp型吸光層と、重くドープされた第2の極薄p型吸光層と、p型接点バッファ層とを具え、高い消光比を有する請求項1記載のヘテロ接合半導体光電陰極。
- 低光量の情報を検出するための固体光電子増倍管と、中高光量の情報を検出するための逆バイアスが印加されるヘテロ接合光電陰極とを具える低・高レベル複合型の半導体光検出器。
- オーム接合が表面に沿うパターンで構成され、該パターンが、光電陰極の表面に沿う無線周波エネルギの伝播を許容すると共に前記光電陰極の光学応答性に影響を及ぼす定インピーダンス・マイクロ波ストリップ線路を形成する請求項28記載の光電陰極。
- 高光量で光電子増倍管がオフにされ、かつ、ヘテロ接合光電陰極が逆バイアスモードに切り替えられ、さらに、整流接合電流を測定して光レベルを決定・定量化するモニタを具える請求項29記載の低・高レベル複合型半導体光検出器。
- 前記ヘテロ接合光電陰極がガリウム砒素よりなる請求項31記載の低・高レベル複合型半導体光検出器。
- 整流接合を含む光電陰極を作成し、前記整流接合に逆バイアスを印加して光電陰極の感度を所定のスペクトル帯域の光に適合するよう低下させる固体光学検波器の製造方法。
- 整流接合を有する光電陰極ヘテロ接合半導体を、第1の期間にわたり整流接合に第1のバイアス電圧を印加した状態で低光量光束により露光し、第2の期間にわたり整流接合に第2のバイアス電圧を印加した状態で低光量光束により露光するカラー情報の抽出方法。
- 2以上の吸光層を有するヘテロ接合半導体光電陰極を成長させ、その際に少なくとも1つの吸光層の長波長カットオフを650〜750 nmの範囲内とする暗視画像システムの製造方法。
- 2以上の吸光層を有するヘテロ接合半導体光電陰極を成長させ、その際に少なくとも1つの吸光層の短波長カットオフを650〜750 nmの範囲内とする暗視画像システムの製造方法。
- ヘテロ接合半導体光電陰極を成長させ、その際に吸光層の組成を傾斜させて傾斜バンドギャップ吸光層を形成するヘテロ接合半導体光電陰極の製造方法。
- ヘテロ接合半導体光電陰極に所定範囲のバイアス電圧を印加すると共に、前記光電陰極を、650〜750 nmの範囲内で顕著なスペクトル情報を有する光学イメージで露光するイメージング方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/142,805 | 2005-06-01 | ||
US11/142,805 US7531826B2 (en) | 2005-06-01 | 2005-06-01 | Photocathode structure and operation |
PCT/US2006/020263 WO2006130430A2 (en) | 2005-06-01 | 2006-05-25 | Photocathode structure and operation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008546150A true JP2008546150A (ja) | 2008-12-18 |
JP5322635B2 JP5322635B2 (ja) | 2013-10-23 |
Family
ID=37482163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514702A Active JP5322635B2 (ja) | 2005-06-01 | 2006-05-25 | 光電陰極構造及び使用方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7531826B2 (ja) |
EP (1) | EP1891678B1 (ja) |
JP (1) | JP5322635B2 (ja) |
WO (1) | WO2006130430A2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4939033B2 (ja) * | 2005-10-31 | 2012-05-23 | 浜松ホトニクス株式会社 | 光電陰極 |
WO2013036576A1 (en) * | 2011-09-07 | 2013-03-14 | Kla-Tencor Corporation | Transmissive-reflective photocathode |
US10197501B2 (en) * | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
WO2015061793A1 (en) * | 2013-10-25 | 2015-04-30 | The University Of Akron | Multipurpose imaging and display system |
US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
US9734977B2 (en) * | 2015-07-16 | 2017-08-15 | Intevac, Inc. | Image intensifier with indexed compliant anode assembly |
US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
US11594459B2 (en) * | 2021-02-11 | 2023-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation layer for a semiconductor device and method for manufacturing the same |
CN112839160B (zh) * | 2021-04-20 | 2021-07-06 | 北京中星时代科技有限公司 | 一种车载夜视辅助驾驶成像光学系统 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4990869A (ja) * | 1972-12-16 | 1974-08-30 | ||
JPS5218550B2 (ja) * | 1974-05-29 | 1977-05-23 | ||
JPH0296383A (ja) * | 1988-10-03 | 1990-04-09 | Nippon Mining Co Ltd | 光電変換素子及びそれを用いた光電変換装置 |
JPH05266857A (ja) * | 1991-12-20 | 1993-10-15 | Litton Syst Inc | 光電陰極装置とその製造方法及び光電陰極装置を適用した暗視システム用画像増幅管 |
JPH05282991A (ja) * | 1992-03-30 | 1993-10-29 | Hamamatsu Photonics Kk | 光電子放射面 |
JPH07262909A (ja) * | 1994-03-18 | 1995-10-13 | Hamamatsu Photonics Kk | 光電子放射陰極、光電変換電子管およびスペクトル測定装置 |
JPH1183619A (ja) * | 1997-09-03 | 1999-03-26 | Sumitomo Electric Ind Ltd | 受光素子及び受光素子モジュ−ル |
JPH11233000A (ja) * | 1998-02-16 | 1999-08-27 | Hamamatsu Photonics Kk | 光電陰極及び電子管 |
JP2001093407A (ja) * | 1999-09-28 | 2001-04-06 | Hamamatsu Photonics Kk | 半導体光電陰極及びそれを用いた光検出器及びそれを用いた光検出装置 |
JP2002151727A (ja) * | 2000-11-08 | 2002-05-24 | Yokogawa Electric Corp | フォトダイオード |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3631303A (en) | 1970-01-19 | 1971-12-28 | Varian Associates | Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency |
US3814993A (en) | 1972-11-15 | 1974-06-04 | Us Navy | Tuneable infrared photocathode |
US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
US4724354A (en) | 1986-05-05 | 1988-02-09 | Eol3 Company, Inc. | Image intensifier for producing a color image having a color separation filter sequentially passing visible blue light and its second order wavelengths, visible green light and its second order wavelengths, and visible red light |
US5047821A (en) | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
US5597112A (en) | 1994-10-13 | 1997-01-28 | Knapp; Frederick W. | Collapsible octahedral container |
US5576559A (en) | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
DE69527261T2 (de) * | 1994-12-21 | 2002-11-21 | Hamamatsu Photonics K.K., Hamamatsu | Photovervielfacher mit einer aus Halbleitermaterial bestehender Photokathode |
US5680007A (en) | 1994-12-21 | 1997-10-21 | Hamamatsu Photonics K.K. | Photomultiplier having a photocathode comprised of a compound semiconductor material |
IL114181A (en) | 1995-06-15 | 1999-07-14 | Orlil Ltd | Color image intensifier device and a method for producing the same |
US6005257A (en) * | 1995-09-13 | 1999-12-21 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
JP3565529B2 (ja) * | 1996-05-28 | 2004-09-15 | 浜松ホトニクス株式会社 | 半導体光電陰極およびこれを用いた半導体光電陰極装置 |
US5883466A (en) * | 1996-07-16 | 1999-03-16 | Hamamatsu Photonics K.K. | Electron tube |
US6121612A (en) * | 1997-10-22 | 2000-09-19 | Litton Systems, Inc. | Night vision device, image intensifier and photomultiplier tube, transfer-electron photocathode for such, and method of making |
AU2001268026A1 (en) | 2000-02-23 | 2001-09-03 | Tenebraex Corporation | Methods and apparatus for providing color images from monochromatic night visionand other electro-optical viewing devices |
US6570147B2 (en) | 2001-05-22 | 2003-05-27 | Itt Manufacturing Enterprises, Inc. | Color night vision apparatus |
US6998635B2 (en) | 2003-05-22 | 2006-02-14 | Itt Manufacturing Enterprises Inc. | Tuned bandwidth photocathode for transmission negative electron affinity devices |
-
2005
- 2005-06-01 US US11/142,805 patent/US7531826B2/en active Active
-
2006
- 2006-05-25 EP EP06771186.1A patent/EP1891678B1/en active Active
- 2006-05-25 JP JP2008514702A patent/JP5322635B2/ja active Active
- 2006-05-25 WO PCT/US2006/020263 patent/WO2006130430A2/en active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4990869A (ja) * | 1972-12-16 | 1974-08-30 | ||
JPS5218550B2 (ja) * | 1974-05-29 | 1977-05-23 | ||
JPH0296383A (ja) * | 1988-10-03 | 1990-04-09 | Nippon Mining Co Ltd | 光電変換素子及びそれを用いた光電変換装置 |
JPH05266857A (ja) * | 1991-12-20 | 1993-10-15 | Litton Syst Inc | 光電陰極装置とその製造方法及び光電陰極装置を適用した暗視システム用画像増幅管 |
JPH05282991A (ja) * | 1992-03-30 | 1993-10-29 | Hamamatsu Photonics Kk | 光電子放射面 |
JPH07262909A (ja) * | 1994-03-18 | 1995-10-13 | Hamamatsu Photonics Kk | 光電子放射陰極、光電変換電子管およびスペクトル測定装置 |
JPH1183619A (ja) * | 1997-09-03 | 1999-03-26 | Sumitomo Electric Ind Ltd | 受光素子及び受光素子モジュ−ル |
JPH11233000A (ja) * | 1998-02-16 | 1999-08-27 | Hamamatsu Photonics Kk | 光電陰極及び電子管 |
JP2001093407A (ja) * | 1999-09-28 | 2001-04-06 | Hamamatsu Photonics Kk | 半導体光電陰極及びそれを用いた光検出器及びそれを用いた光検出装置 |
JP2002151727A (ja) * | 2000-11-08 | 2002-05-24 | Yokogawa Electric Corp | フォトダイオード |
Also Published As
Publication number | Publication date |
---|---|
EP1891678B1 (en) | 2018-10-31 |
JP5322635B2 (ja) | 2013-10-23 |
US20070034987A1 (en) | 2007-02-15 |
WO2006130430A2 (en) | 2006-12-07 |
EP1891678A4 (en) | 2017-08-23 |
WO2006130430A3 (en) | 2009-05-22 |
US7531826B2 (en) | 2009-05-12 |
EP1891678A2 (en) | 2008-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5322635B2 (ja) | 光電陰極構造及び使用方法 | |
JP5628315B2 (ja) | カットオフ波長を有する低エネルギー携帯性微弱光用カメラ | |
US7728274B2 (en) | Imaging system with negative electron affinity photocathode | |
KR20150040994A (ko) | 붕소 층을 갖는 실리콘 기판을 포함하는 광전 음극 | |
CA2783271A1 (en) | Dichromatic photodiodes | |
US20140239157A1 (en) | Bright source protection for low light imaging sensors | |
Mizuno et al. | Development of UV image intensifier tube with GaN photocathode | |
US5557133A (en) | Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications | |
US10186405B2 (en) | Multiband photocathode and associated detector | |
Sood et al. | Characterization of SiGe-detector arrays for visible-NIR imaging sensor applications | |
Williams Jr et al. | Back-illuminated and electron-bombarded CCD low-light-level imaging system performance | |
Rutz et al. | SWIR detectors for low photon fluxes | |
Turner et al. | The development of, and applications for, extended response (0.7 to 1.7 µm) InGaAs focal plane arrays | |
CN117690986B (zh) | 高温工作单光子探测器、单光子焦平面探测器及制备方法 | |
Aebi et al. | Multichannel intensified photodiode for near infrared single photon detection | |
US20240055545A1 (en) | Enhanced dual-band night vision system | |
EP1759064B1 (en) | Photonic detector device and method | |
Suyama et al. | Single-photon-sensitive EBCCD with additional multiplication | |
Johnson | Photoelectronic detector technology review and update (Keynote Address) | |
Lin | VL Detectors | |
Schagen | Some recent developments in remote sensing | |
Ulmer et al. | Advances in UV sensitive visible blind GaN-based APDs | |
Buller et al. | Optical detection and noise | |
Butter et al. | Optical detection and noise | |
Long | Ultraviolet detectors and focal plane array imagers based on AlxGa1-xN PIN photodiodes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090522 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20090522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120619 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120919 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120926 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121018 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121025 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130618 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130716 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5322635 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |