JP5628315B2 - カットオフ波長を有する低エネルギー携帯性微弱光用カメラ - Google Patents
カットオフ波長を有する低エネルギー携帯性微弱光用カメラ Download PDFInfo
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Description
本願は、2009年8月31日に提出され、シリアル番号61/238,641の米国仮出願からの優先的利益を主張し、その全体的な開示は参照によりここに組み込まれるものである。
本発明は、暗視アプリケーション用の微弱光イメージングの分野に関する。
光電陰極に基づくイメージ増強チューブ、電子打ち込み式CCD(EBCCD)及び電子衝突型アクティブピクセルセンサー(EBAPS)は、弱光照明条件下でイメージを取得する目的で、広く知られている。EBAPSは、米国特許第6,285,018B1号(特許文献1)に記述されている。EBCCDは、米国特許第4,687,922号(特許文献2)に記述されている。これらの光陰電極ベースのデバイスは、幅広いアレイを有する光陰電極材料、いわゆる第2世代のイメージインテンシファイア中に用いられた伝統的なマルチアルカリ又はバイアルカリの光陰電極から、GaAsを用いた近代の負電子親和力(NEA)を有するIII−V族半導体光陰電極、GaAs1−xPx(格子定数及びバンドギャップはxの値によって決定され、0≦x≧1である)、及び関連するIII−V族半導体材料までを利用する。GaAs光電陰極を用いるイメージ増強装置は、米国特許第6,597,112号で記述されるように、暗視ゴーグルにおいて広く利用されている第3世代のイメージ増強装置中で利用されている。イメージ増強装置内で利用されるInGaAsのNEA光電陰極は、米国特許第6,121,612号に記述されている。GaAs光電陰極を用いたEBAPSカメラは、弱光イメージングカメラ及びデジタル暗視システム用に広く利用されている。
直接的なエネルギーバンドギャップ、つまり、上記公式によって特定されるInP格子整合In1−xGaxAsyP1−yのEg,dirは、Eg,dir=1.35−0.075y+0.149y2によって与えられる。ここで、エネルギーバンドギャップEg,dirはeV内にあり、yはInPに対して格子整合するための先行式中で定義されたAsの組成値である。エネルギーバンドギャップEg,dirは、温度298°Kにおける上記公式によって定義される。
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Claims (20)
- 暗視装置であって、
長波長反応カットオフを1.25μm〜1.4μmの波長範囲に制限する組成を有する半導体吸収層を含むセンサーと、
前記センサーの裏側に配置されて且つ前記センサーに接続されるイメージングチップと、
前記イメージングチップから信号を収集する電子機器とを備えており、
当該暗視装置は、大気動作温度で低暗電流を有する1.4μmよりも小さい波長にて、微弱光条件下で、光を検知する、暗視装置。 - 請求項1に記載の暗視装置において、
前記半導体吸収層は、長波長反応カットオフを1.25μm〜1.4μmの波長に制限する組成を有する、InGaAsPを含む、暗視装置。 - 請求項2に記載の暗視装置において、
前記半導体吸収層は、In0.68Ga0.32As0.69P0.31からIn0.76Ga0.24As0.51P0.49の範囲で、In1−xGaxAsyP1−yの組成を含む、暗視装置。 - 請求項2に記載の暗視装置において、
前記半導体吸収層は、In0.71Ga0.29As0.63P0.37を含む、暗視装置。 - 請求項2に記載の暗視装置において、
前記半導体吸収層は、1.35ミクロン〜1.40ミクロンの波長内でバンドギャップを有する半導体を含む、暗視装置。 - 請求項1に記載の暗視装置において、
前記イメージングチップは、1600ピクセル×1200ピクセルを有するCMOSアノードアレイを含む、暗視装置。 - 請求項6に記載の暗視装置において、
前記イメージングチップは、10.8ミクロンの画素ピッチを含む、暗視装置。 - 請求項7に記載の暗視装置において、
前記イメージングチップは、60Hzで動作する、暗視装置。 - 暗視アプリケーション用のセンサーであって、
InP基板と、
前記InP基板の一表面上に形成されたInPバッファ層と、
前記InPバッファ層上に形成されたInGaAsP吸収層と、
前記InGaAsP吸収層の上方に形成されたInPキャップ層とを備えており、
前記InGaAsP吸収層は、長波長反応カットオフを1.25μm〜1.4μmの範囲の波長に制限する、暗視アプリケーション用のセンサー。 - 請求項9に記載の暗視アプリケーション用のセンサーにおいて、
前記InGaAsP吸収層と前記InPキャップ層との間に形成されたグレーディング層(grading layer)をさらに備えており、
前記InPキャップ層は、エミッタ層を形成している、暗視アプリケーション用のセンサー。 - 請求項10に記載の暗視アプリケーション用のセンサーにおいて、
前記InPキャップ層の上方に形成されたショットキーバリア層と、
前記INPキャップ層の上方に形成された接触格子とを含む、暗視アプリケーション用のセンサー。 - 請求項9に記載の暗視アプリケーション用のセンサーにおいて、
前記InPキャップ層を介して形成されて且つ部分的に前記InGaAsP吸収層へ延伸している、P型拡散層を含む、暗視アプリケーション用のセンサー。 - 請求項9に記載の暗視アプリケーション用のセンサーにおいて、
前記InGaAsP吸収層は、In0.68Ga0.32As0.69P0.31からIn0.76Ga0.24As0.51P0.49の範囲で、In1−xGaxAsyP1−y組成を含む、暗視アプリケーション用のセンサー。 - 請求項11に記載の暗視アプリケーション用のセンサーにおいて、
前記InGaAsP吸収層は、In0.68Ga0.32As0.69P0.31からIn0.76Ga0.24As0.51P0.49の範囲で、In1−xGaxAsyP1−y組成を含む、暗視アプリケーション用のセンサー。 - 請求項12に記載の暗視アプリケーション用のセンサーにおいて、
前記InGaAsP吸収層は、In0.68Ga0.32As0.69P0.31からIn0.76Ga0.24As0.51P0.49の範囲で、In1−xGaxAsyP1−y組成を含む、暗視アプリケーション用のセンサー。 - 暗視装置であって、
長波長反応カットオフを1.25μm〜1.4μmの範囲の波長に制限するセンサーと、
前記センサーの裏側に位置して且つ前記センサーに接続されており、10.8ミクロンの画素ピッチで1600ピクセル×1200ピクセルを有すると共に60Hzで動作するアレイを含む、イメージングチップとを備える、暗視装置。 - 請求項16に記載の暗視装置において、
前記センサーは、
InP基板と、
前記InP基板の上方に形成されたInGaAsP吸収層とを備えている、暗視装置。 - 請求項17に記載の暗視装置において、
前記InGaAsP吸収層は、In0.68Ga0.32As0.69P0.31からIn0.76Ga0.24As0.51P0.49の範囲で、In1−xGaxAsyP1−y組成を含む、センサー。 - 請求項1に記載の暗視装置において、
前記半導体吸収層は、s及びtが0と1との間で変化する(AlsGa1−s)1−tIntAs半導体アロイシステムを含む、暗視装置。 - 請求項16に記載の暗視装置において、
前記センサーは、s及びtが0と1との間で変化する(AlsGa1−s)1−tIntAs半導体アロイシステムからなる吸収層を含む、暗視装置。
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US8581228B2 (en) | 2009-01-22 | 2013-11-12 | Bae Systems Information And Electronic Systems Integration Inc. | Corner cube enhanced photocathode |
US8692198B2 (en) * | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US8687110B1 (en) * | 2011-05-31 | 2014-04-01 | Flir Systems, Inc. | Intelligent power management for actively-cooled cameras |
DE102017215715B4 (de) * | 2017-09-06 | 2019-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optischer bildaufnehmer zur aufnahme zweidimensionaler bilder im nahen infrarotbereich |
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US11606515B2 (en) | 2019-10-24 | 2023-03-14 | Trieye Ltd | Methods and systems for active SWIR imaging using germanium receivers |
US11664471B2 (en) | 2019-10-24 | 2023-05-30 | Trieye Ltd. | Systems, methods, and computer program products for image generation |
US11811194B2 (en) | 2019-10-24 | 2023-11-07 | Trieye Ltd. | Passive Q-switched lasers and methods for operation and manufacture thereof |
US11665447B2 (en) | 2019-10-24 | 2023-05-30 | Trieye Ltd. | Systems and methods for compensating for dark current in a photodetecting device |
US11810747B2 (en) * | 2020-07-29 | 2023-11-07 | Elbit Systems Of America, Llc | Wafer scale enhanced gain electron bombarded CMOS imager |
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FR2574239B1 (fr) | 1984-11-30 | 1987-01-23 | Labo Electronique Physique | Capteur d'images pour camera fonctionnant en mode " jour-nuit " |
US5047821A (en) * | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
US5576559A (en) * | 1994-11-01 | 1996-11-19 | Intevac, Inc. | Heterojunction electron transfer device |
EP0773591A3 (en) * | 1995-11-13 | 1998-09-16 | Sumitomo Electric Industries, Ltd. | Light emitting/detecting module |
US6121612A (en) | 1997-10-22 | 2000-09-19 | Litton Systems, Inc. | Night vision device, image intensifier and photomultiplier tube, transfer-electron photocathode for such, and method of making |
US6229152B1 (en) * | 1999-02-18 | 2001-05-08 | The Trustees Of Princeton University | Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation |
AU2996400A (en) | 1999-03-01 | 2000-09-21 | Sensors Unlimited Inc. | Doped structures for improved ingaas performance in imaging devices |
US6657178B2 (en) * | 1999-07-20 | 2003-12-02 | Intevac, Inc. | Electron bombarded passive pixel sensor imaging |
US6285018B1 (en) | 1999-07-20 | 2001-09-04 | Intevac, Inc. | Electron bombarded active pixel sensor |
US6586718B2 (en) | 2000-05-25 | 2003-07-01 | Matsushita Electric Industrial Co., Ltd. | Photodetector and method for fabricating the same |
JP2002050786A (ja) * | 2000-05-25 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 受光素子およびその製造方法 |
US6597112B1 (en) | 2000-08-10 | 2003-07-22 | Itt Manufacturing Enterprises, Inc. | Photocathode for night vision image intensifier and method of manufacture |
JP2002289904A (ja) | 2001-03-23 | 2002-10-04 | Sumitomo Electric Ind Ltd | 半導体受光素子とその製造方法 |
US7276749B2 (en) | 2002-02-05 | 2007-10-02 | E-Phocus, Inc. | Image sensor with microcrystalline germanium photodiode layer |
US6852976B2 (en) | 2002-09-26 | 2005-02-08 | Indigo Systems Corporation | Infrared detector array with improved spectral range and method for making the same |
US7453129B2 (en) | 2002-12-18 | 2008-11-18 | Noble Peak Vision Corp. | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
KR100670828B1 (ko) * | 2005-12-12 | 2007-01-19 | 한국전자통신연구원 | 적외선 레이저 레이다의 영상 신호를 검출하기 위한 광검출기 및 그 제조방법 |
JP2007201432A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 |
US7651880B2 (en) | 2006-11-04 | 2010-01-26 | Sharp Laboratories Of America, Inc. | Ge short wavelength infrared imager |
US7608825B2 (en) * | 2006-12-14 | 2009-10-27 | Sumitomo Electric Industries, Ltd. | Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus |
US7598582B2 (en) | 2007-06-13 | 2009-10-06 | The Boeing Company | Ultra low dark current pin photodetector |
US20090020700A1 (en) * | 2007-07-17 | 2009-01-22 | Locheed Martin Corporation | Method and device for generating an electrical signal in response to light |
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EP2835830A3 (en) | 2015-05-20 |
EP2474034A1 (en) | 2012-07-11 |
EP2835830A2 (en) | 2015-02-11 |
CA2772394C (en) | 2018-02-06 |
AU2010286372A1 (en) | 2012-03-22 |
CA2772394A1 (en) | 2011-03-03 |
IL218363A0 (en) | 2012-04-30 |
EP2835830B1 (en) | 2018-10-17 |
JP2013503455A (ja) | 2013-01-31 |
AU2010286372B2 (en) | 2014-09-18 |
EP2474034B1 (en) | 2014-11-12 |
US8421012B2 (en) | 2013-04-16 |
EP2474034A4 (en) | 2014-02-26 |
WO2011026143A1 (en) | 2011-03-03 |
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