JP5322635B2 - 光電陰極構造及び使用方法 - Google Patents
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Description
13 光源
16 二色光電陰極
17 光電子増倍管
18 血球分離装置
19 試料管
20 コンピュータ制御ユニット
21 センサ
22 ヘルメット
23 カラー光電陰極
25 ディスプレイ
26 熱イメージング用レンズ系
27 暗視チャネル用レンズ系
Claims (34)
- 整流接合を構成する光学ウィンドウ層と、吸光層とを含む、ヘテロ接合を具える透過型光電陰極であって、
前記整流接合は、前記透過型光電陰極に入射する光が、当該透過型光電陰極の前記整流接合以外の部分に到達する前に前記整流接合を通過するように配置されており、
該ヘテロ接合が伝導帯バリアを有し、
前記透過型光電陰極が、バイアスの印加時に、前記ヘテロ接合に電界を生じさせて前記バリアを取り除く電気的接続を更に具える、透過型光電陰極。 - 前記吸光層に接触しない側で前記光学ウィンドウ層上に配置されたショットキー接合を含み、
該ショットキー接合が前記光学ウィンドウ層と共に前記整流接合を形成している、請求項1記載の透過型光電陰極。 - 前記光学ウィンドウ層がp型にドープされている、請求項2記載の透過型光電陰極。
- 前記光学ウィンドウ層が、p型光学ウィンドウ層と、当該p型光学ウィンドウ層の上に配置されたn型光学ウィンドウ層とを含み、
前記ヘテロ接合が前記p型光学ウィンドウ層及び前記吸光層の間に生成され、
前記p型光学ウィンドウ層及び前記n型光学ウィンドウ層の間で前記整流接合を形成している、請求項1記載の透過型光電陰極。 - 前記吸光層が、p型にドープされた第1のp型吸光層である、請求項4記載の透過型光電陰極。
- 前記n型光学ウィンドウ層にn型オーム接合が形成され、
前記第1のp型吸光層にp型オーム接合が形成されている、請求項5記載の透過型光電陰極。 - 前記整流接合へのバイアスの非印加時に、前記p型光学ウィンドウ層における少なくとも100オングストロームの厚さの領域が非空乏状態に維持されるように、前記p型光学ウィンドウ層の厚さ及びドーピングが定められている、請求項6記載の透過型光電陰極。
- 前記n型光学ウィンドウ層がTE光電陰極の透明基材を具える、請求項4記載の透過型光電陰極。
- 前記n型光学ウィンドウ層がn型AlGaAsよりなる、請求項4記載の透過型光電陰極。
- 第2のp型吸光層が前記第1のp型吸光層上に配置され、
該第1のp型吸光層が前記p型光学ウィンドウ層上に配置されている、請求項5記載の透過型光電陰極。 - 前記第2のp型吸光層がGaAsよりなる、請求項10記載の透過型光電陰極。
- 前記n型光学ウィンドウ層が反射防止コーティング上に配置され、
該反射防止コーティングがガラス支持層上に配置されている、請求項4記載の透過型光電陰極。 - 整流接合を有する透過型光電陰極であって、
前記整流接合は、当該透過型光電陰極に入射する光が、当該透過型光電陰極の前記整流接合以外の部分に到達する前に前記整流接合を通過するように配置されており、
前記透過型光電陰極は、
ガラス支持ウィンドウと、
該ガラス支持ウィンドウの表面上に配置した反射防止コーティングと、
該反射防止コーティング上に配置したn型光学ウィンドウ層と、
該n型光学ウィンドウ層上に配置したp型光学ウィンドウ層と、
該p型光学ウィンドウ層上に配置した第1の遷移層と、
該第1の遷移層上に配置した第1のp型吸光層と、
該第1のp型吸光層上に配置した第2の遷移層と、
該第2の遷移層上に配置した第2のp型吸光層と、
該第2のp型吸光層の開放表面領域上及び前記n型光学ウィンドウ層の開放表面上にそれぞれ配置した電気オーム接合と、
を具えている、透過型光電陰極。 - 前記第2のp型吸光層の開放表面領域上に配置された前記電気オーム接合が、p型オーム接合よりなる、請求項13記載の透過型光電陰極。
- 前記n型光学ウィンドウ層上に配置された前記電気オーム接合が、n型オーム接合よりなる、請求項13記載の透過型光電陰極。
- 整流接合を有する透過型光電陰極であって、
前記整流接合は、当該透過型光電陰極に入射する光が、当該透過型光電陰極の前記整流接合以外の部分に到達する前に前記整流接合を通過するように配置されており、
前記透過型光電陰極は、光起電力応答が電気的に変更可能であるとともに、
反射防止コーティング層と、
該反射防止コーティング層上に配置したn型光学ウィンドウ層と、
該n型光学ウィンドウ層上に配置したp型光学ウィンドウ層と、
該p型光学ウィンドウ層上に配置した第1のp型吸光層と、
該第1のp型吸光層上に配置した遷移層と、
該遷移層上に配置した第2のp型吸光層と、
該第2のp型吸光層上に配置したエミッタ層と、
前記n型光学ウィンドウ層及び前記第2のp型吸光層の周辺に個別的に配置した2個の電気接点と、
前記エミッタ層の表面上でショットキー接合として機能する第3の電気接点と、
を具えている、透過型光電陰極。 - 請求項1〜16のいずれか一項に記載の透過型光電陰極を有する光電子増倍管と、
被検懸濁液を導入し、かつ調整する供給ステーションと、
該供給ステーションに接続され、該供給ステーションからの前記被検懸濁液を流す検査管と、
該検査管の小断面を照射する光源と、
前記検査管を流れる試料からの散乱光又は発光を受光し、その受光した光を、分析のために前記光電子増倍管に照射する光学系と、
を具える、流動血球計測システム。 - 請求項1〜16のいずれか一項に記載の透過型光電陰極と、
該透過型光電陰極の入力面上にイメージを生成する集光光学系と、
前記透過型光電陰極からの信号出力を増幅して、前記透過型光電陰極が受光した微光イメージに対応する可視イメージ又は電子イメージを形成する電子利得段と、
を具える、暗視システム。 - 請求項1〜16のいずれか一項に記載の透過型光電陰極を設けた双眼装置と、
該透過型光電陰極により受けられた入力を電子利得段に供給して、前記透過型光電陰極が受光した微光イメージに対応する可視イメージ又は電子イメージを形成する集光光学系と、
を具える、暗視システム。 - サーマル・イメージング素子と、画像処理手段とを含み、サーマル・イメージ及び前記微光イメージを統合して複合観察可能とした、請求項18記載の暗視システム。
- 整流接合と、
吸光層と、
基体層としての第1のn型光学ウィンドウ層と、
バッファ層としての第2のn型光学ウィンドウ層と、
p型光学ウィンドウ層と、
を備えた透過型光電陰極であって、
前記整流接合は、前記第2のn型光学ウィンドウ層及び前記p型光学ウィンドウ層の間に形成され、
前記吸光層は、第1のp型吸光層と、前記第1のp型吸光層上の第1の遷移層と、当該第1の遷移層上の第2のp型吸光層と、当該第2のp型吸光層上の第2の遷移層と、当該第2の遷移層上のエミッタ層と、を具える、光電陰極。 - 前記第1のn型光学ウィンドウ層の表面上に配置した第1のオーム接合と、前記第2のp型吸光層の露出面上に配置した第2のオーム接合とを更に具える、請求項21記載の透過型光電陰極。
- エミッタ層の表面上にショットキー接合を更に具える、請求項22記載の透過型光電陰極。
- 前記ショットキー接合が周辺近傍に配置され、前記透過型光電陰極上に大きな非妨害アクティブ領域を維持する、請求項23記載の透過型光電陰極。
- 前記基体層がInPよりなり、前記バッファ層がInPよりなる、請求項21記載の透過型光電陰極。
- 前記p型光学ウィンドウ層がInPよりなり、前記第1のp型吸光層がInGaAsPよりなる、請求項21記載の透過型光電陰極。
- 前記エミッタ層が、5E16/cm3未満にドープされたInPよりなる、請求項26記載の透過型光電陰極。
- n型光学ウィンドウ層と、第1のp型光学ウィンドウ層、第2のp型光学ウィンドウ層と、第1のp型吸光層と、当該第1のp型吸光層よりも重くドープされた第2のp型吸光層と、p型接点バッファ層とを具える、請求項1記載の透過型光電陰極。
- 低光量の情報を検出するための固体光電子増倍管と、中高光量の情報を検出するための逆バイアスが印加される請求項1〜16のいずれか一項に記載の透過型光電陰極とを具える、低・高レベル複合型の半導体光検出器。
- オーム接合が前記透過型光電陰極の表面に形成されたパターンで構成され、
該パターンが、定インピーダンス・マイクロストリップラインからなる、請求項28記載の透過型光電陰極。 - 高光量で前記固体光電子増倍管がオフにされ、かつ、前記透過型光電陰極が逆バイアスモードに切り替えられ、さらに、整流接合電流を測定して光レベルを決定・定量化するモニタを具える、請求項29記載の低・高レベル複合型半導体光検出器。
- 前記透過型光電陰極がガリウム砒素よりなる、請求項31記載の低・高レベル複合型半導体光検出器。
- 請求項1〜16のいずれか一項に記載の透過型光電陰極を作成し、前記整流接合に逆バイアスを印加して前記透過型光電陰極の感度を所定のスペクトル帯域の光に適合するよう低下させる、固体光学検波器の製造方法。
- 請求項1〜16のいずれか一項に記載の透過型光電陰極を、第1の期間にわたり前記整流接合に第1のバイアス電圧を印加した状態で低光量光束により露光し、第2の期間にわたり前記整流接合に第2のバイアス電圧を印加した状態で低光量光束により露光する、カラー情報の抽出方法。
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