JP2008544078A5 - - Google Patents
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- Publication number
- JP2008544078A5 JP2008544078A5 JP2008515972A JP2008515972A JP2008544078A5 JP 2008544078 A5 JP2008544078 A5 JP 2008544078A5 JP 2008515972 A JP2008515972 A JP 2008515972A JP 2008515972 A JP2008515972 A JP 2008515972A JP 2008544078 A5 JP2008544078 A5 JP 2008544078A5
- Authority
- JP
- Japan
- Prior art keywords
- oxime
- electroless plating
- plating solution
- ppm
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000001875 compounds Chemical class 0.000 claims 13
- 150000002923 oximes Chemical class 0.000 claims 13
- 238000007772 electroless plating Methods 0.000 claims 12
- 239000003381 stabilizer Substances 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 6
- 239000003638 chemical reducing agent Substances 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- FZENGILVLUJGJX-NSCUHMNNSA-N (E)-acetaldehyde oxime Chemical group C\C=N\O FZENGILVLUJGJX-NSCUHMNNSA-N 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 238000004377 microelectronic Methods 0.000 claims 3
- CUNNCKOPAWXYDX-SFECMWDFSA-N (NZ)-N-[(2Z)-2-hydroxyiminocyclohexylidene]hydroxylamine Chemical compound O\N=C/1\CCCC\C\1=N\O CUNNCKOPAWXYDX-SFECMWDFSA-N 0.000 claims 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims 2
- 239000004471 Glycine Substances 0.000 claims 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 2
- 150000003863 ammonium salts Chemical class 0.000 claims 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 2
- 239000002738 chelating agent Substances 0.000 claims 2
- MTFJSAGADRTKCI-VMPITWQZSA-N chembl77510 Chemical compound O\N=C\C1=CC=CC=N1 MTFJSAGADRTKCI-VMPITWQZSA-N 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims 2
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 claims 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims 2
- 235000011180 diphosphates Nutrition 0.000 claims 2
- 239000004310 lactic acid Substances 0.000 claims 2
- 235000014655 lactic acid Nutrition 0.000 claims 2
- 239000001630 malic acid Substances 0.000 claims 2
- 235000011090 malic acid Nutrition 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 claims 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 235000019260 propionic acid Nutrition 0.000 claims 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- ORIHZIZPTZTNCU-YVMONPNESA-N salicylaldoxime Chemical compound O\N=C/C1=CC=CC=C1O ORIHZIZPTZTNCU-YVMONPNESA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- 229910001413 alkali metal ion Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 230000009920 chelation Effects 0.000 claims 1
- 239000008139 complexing agent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/148,724 US20060280860A1 (en) | 2005-06-09 | 2005-06-09 | Cobalt electroless plating in microelectronic devices |
| PCT/US2006/022493 WO2006135752A2 (en) | 2005-06-09 | 2006-06-09 | Cobalt electroless plating in microelectronic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008544078A JP2008544078A (ja) | 2008-12-04 |
| JP2008544078A5 true JP2008544078A5 (enExample) | 2009-07-30 |
Family
ID=37524395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008515972A Withdrawn JP2008544078A (ja) | 2005-06-09 | 2006-06-09 | 超小型電子デバイスにおけるコバルト無電解めっき |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060280860A1 (enExample) |
| EP (1) | EP1896630A2 (enExample) |
| JP (1) | JP2008544078A (enExample) |
| KR (1) | KR20080018945A (enExample) |
| CN (1) | CN101238239A (enExample) |
| TW (1) | TW200712256A (enExample) |
| WO (1) | WO2006135752A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7902639B2 (en) * | 2005-05-13 | 2011-03-08 | Siluria Technologies, Inc. | Printable electric circuits, electronic components and method of forming the same |
| US7655081B2 (en) * | 2005-05-13 | 2010-02-02 | Siluria Technologies, Inc. | Plating bath and surface treatment compositions for thin film deposition |
| EP1938367A2 (en) * | 2005-09-20 | 2008-07-02 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US8551560B2 (en) * | 2008-05-23 | 2013-10-08 | Intermolecular, Inc. | Methods for improving selectivity of electroless deposition processes |
| US8304906B2 (en) * | 2010-05-28 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Partial air gap formation for providing interconnect isolation in integrated circuits |
| CN102154632A (zh) * | 2011-03-22 | 2011-08-17 | 王建朝 | 室温非水体系化学镀钴的方法 |
| CN103187298B (zh) * | 2011-12-31 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极场效应晶体管及其制作方法 |
| EP2639335B1 (en) * | 2012-03-14 | 2015-09-16 | Atotech Deutschland GmbH | Alkaline plating bath for electroless deposition of cobalt alloys |
| US9768063B1 (en) | 2016-06-30 | 2017-09-19 | Lam Research Corporation | Dual damascene fill |
| US11133218B1 (en) * | 2020-01-23 | 2021-09-28 | Tae Young Lee | Semiconductor apparatus having through silicon via structure and manufacturing method thereof |
| CN113059179B (zh) * | 2021-03-17 | 2022-06-03 | 电子科技大学 | 一种磁性钴颗粒的制备方法 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3472665A (en) * | 1967-06-02 | 1969-10-14 | Dow Chemical Co | Electroless coating of cobalt and nickel |
| US4100133A (en) * | 1976-06-24 | 1978-07-11 | Rohm And Haas Company | Air-dry curable compositions comprising dicyclopentenyl (meth) acrylate copolymers and non-volatile reactive monomer, and cured coatings and impregnations obtained therefrom |
| US4143205A (en) * | 1976-10-05 | 1979-03-06 | Diamond Shamrock Corporation | Phosphatized and painted metal articles |
| US4169171A (en) * | 1977-11-07 | 1979-09-25 | Harold Narcus | Bright electroless plating process and plated articles produced thereby |
| SU1060702A1 (ru) * | 1982-01-21 | 1983-12-15 | Предприятие П/Я М-5769 | Раствор дл химического меднени диэлектриков |
| US4514586A (en) * | 1982-08-30 | 1985-04-30 | Enthone, Inc. | Method of using a shielding means to attenuate electromagnetic radiation in the radio frequency range |
| US4487745A (en) * | 1983-08-31 | 1984-12-11 | Drew Chemical Corporation | Oximes as oxygen scavengers |
| US5178995A (en) * | 1986-09-18 | 1993-01-12 | Canon Kabushiki Kaisha | Optical information recording medium |
| CN1131894C (zh) * | 1994-12-27 | 2003-12-24 | 揖斐电株式会社 | 化学镀用的前处理液、化学镀浴槽和化学镀方法 |
| US5545927A (en) * | 1995-05-12 | 1996-08-13 | International Business Machines Corporation | Capped copper electrical interconnects |
| CA2178146C (en) * | 1995-06-06 | 2002-01-15 | Mark W. Zitko | Electroless nickel cobalt phosphorous composition and plating process |
| US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
| JP3998813B2 (ja) * | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6410104B1 (en) * | 1998-07-27 | 2002-06-25 | Seagate Technology Llc | Electroless nickel-phosphorous coatings with high thermal stability |
| SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
| US6323128B1 (en) * | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
| JP4273475B2 (ja) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP3979791B2 (ja) * | 2000-03-08 | 2007-09-19 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| US6717189B2 (en) * | 2001-06-01 | 2004-04-06 | Ebara Corporation | Electroless plating liquid and semiconductor device |
| US6736954B2 (en) * | 2001-10-02 | 2004-05-18 | Shipley Company, L.L.C. | Plating bath and method for depositing a metal layer on a substrate |
| JP4003116B2 (ja) * | 2001-11-28 | 2007-11-07 | 株式会社フジミインコーポレーテッド | 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法 |
| US6645567B2 (en) * | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| US6905622B2 (en) * | 2002-04-03 | 2005-06-14 | Applied Materials, Inc. | Electroless deposition method |
| US7008872B2 (en) * | 2002-05-03 | 2006-03-07 | Intel Corporation | Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures |
| US6821324B2 (en) * | 2002-06-19 | 2004-11-23 | Ramot At Tel-Aviv University Ltd. | Cobalt tungsten phosphorus electroless deposition process and materials |
| US20040096592A1 (en) * | 2002-11-19 | 2004-05-20 | Chebiam Ramanan V. | Electroless cobalt plating solution and plating techniques |
| US6911067B2 (en) * | 2003-01-10 | 2005-06-28 | Blue29, Llc | Solution composition and method for electroless deposition of coatings free of alkali metals |
| US6902605B2 (en) * | 2003-03-06 | 2005-06-07 | Blue29, Llc | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
| US6794288B1 (en) * | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
| US6924232B2 (en) * | 2003-08-27 | 2005-08-02 | Freescale Semiconductor, Inc. | Semiconductor process and composition for forming a barrier material overlying copper |
| US20050085031A1 (en) * | 2003-10-15 | 2005-04-21 | Applied Materials, Inc. | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers |
| WO2005038084A2 (en) * | 2003-10-17 | 2005-04-28 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
| US20050095830A1 (en) * | 2003-10-17 | 2005-05-05 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
| US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
| US20050170650A1 (en) * | 2004-01-26 | 2005-08-04 | Hongbin Fang | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
-
2005
- 2005-06-09 US US11/148,724 patent/US20060280860A1/en not_active Abandoned
-
2006
- 2006-06-09 EP EP06772699A patent/EP1896630A2/en not_active Withdrawn
- 2006-06-09 TW TW095120711A patent/TW200712256A/zh unknown
- 2006-06-09 WO PCT/US2006/022493 patent/WO2006135752A2/en not_active Ceased
- 2006-06-09 CN CNA2006800276848A patent/CN101238239A/zh active Pending
- 2006-06-09 JP JP2008515972A patent/JP2008544078A/ja not_active Withdrawn
- 2006-06-09 KR KR1020087000521A patent/KR20080018945A/ko not_active Withdrawn
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