JP2008544078A - 超小型電子デバイスにおけるコバルト無電解めっき - Google Patents

超小型電子デバイスにおけるコバルト無電解めっき Download PDF

Info

Publication number
JP2008544078A
JP2008544078A JP2008515972A JP2008515972A JP2008544078A JP 2008544078 A JP2008544078 A JP 2008544078A JP 2008515972 A JP2008515972 A JP 2008515972A JP 2008515972 A JP2008515972 A JP 2008515972A JP 2008544078 A JP2008544078 A JP 2008544078A
Authority
JP
Japan
Prior art keywords
oxime
electroless plating
ppm
plating solution
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008515972A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008544078A5 (enExample
Inventor
パネカッシオ，ビンセント，ジュニア
チェン，チンジャン
バルベルデ，チャールズ
ペトロフ，ニコライ
ウィット，クリスチャン
ハートビーズ，リチャード
Original Assignee
エントン インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エントン インコーポレイテッド filed Critical エントン インコーポレイテッド
Publication of JP2008544078A publication Critical patent/JP2008544078A/ja
Publication of JP2008544078A5 publication Critical patent/JP2008544078A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
JP2008515972A 2005-06-09 2006-06-09 超小型電子デバイスにおけるコバルト無電解めっき Withdrawn JP2008544078A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/148,724 US20060280860A1 (en) 2005-06-09 2005-06-09 Cobalt electroless plating in microelectronic devices
PCT/US2006/022493 WO2006135752A2 (en) 2005-06-09 2006-06-09 Cobalt electroless plating in microelectronic devices

Publications (2)

Publication Number Publication Date
JP2008544078A true JP2008544078A (ja) 2008-12-04
JP2008544078A5 JP2008544078A5 (enExample) 2009-07-30

Family

ID=37524395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008515972A Withdrawn JP2008544078A (ja) 2005-06-09 2006-06-09 超小型電子デバイスにおけるコバルト無電解めっき

Country Status (7)

Country Link
US (1) US20060280860A1 (enExample)
EP (1) EP1896630A2 (enExample)
JP (1) JP2008544078A (enExample)
KR (1) KR20080018945A (enExample)
CN (1) CN101238239A (enExample)
TW (1) TW200712256A (enExample)
WO (1) WO2006135752A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510042A (ja) * 2012-03-14 2015-04-02 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ コバルト合金無電解めっき用アルカリ性めっき浴

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US7655081B2 (en) * 2005-05-13 2010-02-02 Siluria Technologies, Inc. Plating bath and surface treatment compositions for thin film deposition
EP1938367A2 (en) * 2005-09-20 2008-07-02 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US8551560B2 (en) * 2008-05-23 2013-10-08 Intermolecular, Inc. Methods for improving selectivity of electroless deposition processes
US8304906B2 (en) * 2010-05-28 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Partial air gap formation for providing interconnect isolation in integrated circuits
CN102154632A (zh) * 2011-03-22 2011-08-17 王建朝 室温非水体系化学镀钴的方法
CN103187298B (zh) * 2011-12-31 2016-04-20 中芯国际集成电路制造(上海)有限公司 金属栅极场效应晶体管及其制作方法
US9768063B1 (en) 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US11133218B1 (en) * 2020-01-23 2021-09-28 Tae Young Lee Semiconductor apparatus having through silicon via structure and manufacturing method thereof
CN113059179B (zh) * 2021-03-17 2022-06-03 电子科技大学 一种磁性钴颗粒的制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472665A (en) * 1967-06-02 1969-10-14 Dow Chemical Co Electroless coating of cobalt and nickel
US4100133A (en) * 1976-06-24 1978-07-11 Rohm And Haas Company Air-dry curable compositions comprising dicyclopentenyl (meth) acrylate copolymers and non-volatile reactive monomer, and cured coatings and impregnations obtained therefrom
US4143205A (en) * 1976-10-05 1979-03-06 Diamond Shamrock Corporation Phosphatized and painted metal articles
US4169171A (en) * 1977-11-07 1979-09-25 Harold Narcus Bright electroless plating process and plated articles produced thereby
SU1060702A1 (ru) * 1982-01-21 1983-12-15 Предприятие П/Я М-5769 Раствор дл химического меднени диэлектриков
US4514586A (en) * 1982-08-30 1985-04-30 Enthone, Inc. Method of using a shielding means to attenuate electromagnetic radiation in the radio frequency range
US4487745A (en) * 1983-08-31 1984-12-11 Drew Chemical Corporation Oximes as oxygen scavengers
US5178995A (en) * 1986-09-18 1993-01-12 Canon Kabushiki Kaisha Optical information recording medium
CN1131894C (zh) * 1994-12-27 2003-12-24 揖斐电株式会社 化学镀用的前处理液、化学镀浴槽和化学镀方法
US5545927A (en) * 1995-05-12 1996-08-13 International Business Machines Corporation Capped copper electrical interconnects
CA2178146C (en) * 1995-06-06 2002-01-15 Mark W. Zitko Electroless nickel cobalt phosphorous composition and plating process
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
JP3998813B2 (ja) * 1998-06-15 2007-10-31 株式会社フジミインコーポレーテッド 研磨用組成物
US6410104B1 (en) * 1998-07-27 2002-06-25 Seagate Technology Llc Electroless nickel-phosphorous coatings with high thermal stability
SG78405A1 (en) * 1998-11-17 2001-02-20 Fujimi Inc Polishing composition and rinsing composition
US6323128B1 (en) * 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP3979791B2 (ja) * 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6717189B2 (en) * 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
US6736954B2 (en) * 2001-10-02 2004-05-18 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate
JP4003116B2 (ja) * 2001-11-28 2007-11-07 株式会社フジミインコーポレーテッド 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法
US6645567B2 (en) * 2001-12-19 2003-11-11 Intel Corporation Electroless plating bath composition and method of using
US6905622B2 (en) * 2002-04-03 2005-06-14 Applied Materials, Inc. Electroless deposition method
US7008872B2 (en) * 2002-05-03 2006-03-07 Intel Corporation Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
US6821324B2 (en) * 2002-06-19 2004-11-23 Ramot At Tel-Aviv University Ltd. Cobalt tungsten phosphorus electroless deposition process and materials
US20040096592A1 (en) * 2002-11-19 2004-05-20 Chebiam Ramanan V. Electroless cobalt plating solution and plating techniques
US6911067B2 (en) * 2003-01-10 2005-06-28 Blue29, Llc Solution composition and method for electroless deposition of coatings free of alkali metals
US6902605B2 (en) * 2003-03-06 2005-06-07 Blue29, Llc Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
US6794288B1 (en) * 2003-05-05 2004-09-21 Blue29 Corporation Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation
US6924232B2 (en) * 2003-08-27 2005-08-02 Freescale Semiconductor, Inc. Semiconductor process and composition for forming a barrier material overlying copper
US20050085031A1 (en) * 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
WO2005038084A2 (en) * 2003-10-17 2005-04-28 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
US20050095830A1 (en) * 2003-10-17 2005-05-05 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
US20050161338A1 (en) * 2004-01-26 2005-07-28 Applied Materials, Inc. Electroless cobalt alloy deposition process
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510042A (ja) * 2012-03-14 2015-04-02 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ コバルト合金無電解めっき用アルカリ性めっき浴

Also Published As

Publication number Publication date
CN101238239A (zh) 2008-08-06
TW200712256A (en) 2007-04-01
WO2006135752A2 (en) 2006-12-21
EP1896630A2 (en) 2008-03-12
WO2006135752B1 (en) 2007-07-12
WO2006135752A3 (en) 2007-04-19
US20060280860A1 (en) 2006-12-14
KR20080018945A (ko) 2008-02-28

Similar Documents

Publication Publication Date Title
US7615491B2 (en) Defectivity and process control of electroless deposition in microelectronics applications
US7393781B2 (en) Capping of metal interconnects in integrated circuit electronic devices
TW200907104A (en) Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys
US7332193B2 (en) Cobalt and nickel electroless plating in microelectronic devices
JP5074025B2 (ja) 半導体工業に使用するための三成分系材料を無電解メッキする組成物
EP3271500A1 (en) Activation method for silicon substrates
JP2008544078A (ja) 超小型電子デバイスにおけるコバルト無電解めっき
TW200835804A (en) Manufacture of electroless cobalt deposition compositions for microelectronics applications
US7658790B1 (en) Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers
TWI342591B (en) Compositions for the electroless deposition of ternary materials for the semiconductor industry
JP2008533702A (ja) スタック・メモリ・セルのためのコバルト自己開始的無電解ビア充填
JP2004339578A (ja) コバルト系合金めっき液、めっき方法及びめっき物
KR101096812B1 (ko) 무전해 니켈-코발트-붕소 삼원합금 도금액, 이를 이용한 무전해 도금공정, 이에 의해 제조된 니켈-코발트-붕소 삼원합금 피막
KR20120057377A (ko) 자기 촉매형 코발트-인 도금액, 이를 이용한 무전해 도금 공정 및 이에 의해 제조된 코발트-인 합금 피막
EP1938367A2 (en) Defectivity and process control of electroless deposition in microelectronics applications
CN101080280A (zh) 微电子设备内钴和镍的化学镀覆

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090609

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090609

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20090831