TW200712256A - Cobalt electroless plating in microelectronic devices - Google Patents

Cobalt electroless plating in microelectronic devices

Info

Publication number
TW200712256A
TW200712256A TW095120711A TW95120711A TW200712256A TW 200712256 A TW200712256 A TW 200712256A TW 095120711 A TW095120711 A TW 095120711A TW 95120711 A TW95120711 A TW 95120711A TW 200712256 A TW200712256 A TW 200712256A
Authority
TW
Taiwan
Prior art keywords
electroless plating
microelectronic devices
cobalt electroless
ions
metal
Prior art date
Application number
TW095120711A
Other languages
English (en)
Chinese (zh)
Inventor
Paneccasio, Jr
qing-yun Chen
Charles Valverde
Nicolai Petrov
Christian Witt
Richard Hurtubise
Original Assignee
Enthone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone filed Critical Enthone
Publication of TW200712256A publication Critical patent/TW200712256A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
TW095120711A 2005-06-09 2006-06-09 Cobalt electroless plating in microelectronic devices TW200712256A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/148,724 US20060280860A1 (en) 2005-06-09 2005-06-09 Cobalt electroless plating in microelectronic devices

Publications (1)

Publication Number Publication Date
TW200712256A true TW200712256A (en) 2007-04-01

Family

ID=37524395

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120711A TW200712256A (en) 2005-06-09 2006-06-09 Cobalt electroless plating in microelectronic devices

Country Status (7)

Country Link
US (1) US20060280860A1 (enExample)
EP (1) EP1896630A2 (enExample)
JP (1) JP2008544078A (enExample)
KR (1) KR20080018945A (enExample)
CN (1) CN101238239A (enExample)
TW (1) TW200712256A (enExample)
WO (1) WO2006135752A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US7655081B2 (en) * 2005-05-13 2010-02-02 Siluria Technologies, Inc. Plating bath and surface treatment compositions for thin film deposition
EP1938367A2 (en) * 2005-09-20 2008-07-02 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US7410899B2 (en) * 2005-09-20 2008-08-12 Enthone, Inc. Defectivity and process control of electroless deposition in microelectronics applications
US8551560B2 (en) * 2008-05-23 2013-10-08 Intermolecular, Inc. Methods for improving selectivity of electroless deposition processes
US8304906B2 (en) * 2010-05-28 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Partial air gap formation for providing interconnect isolation in integrated circuits
CN102154632A (zh) * 2011-03-22 2011-08-17 王建朝 室温非水体系化学镀钴的方法
CN103187298B (zh) * 2011-12-31 2016-04-20 中芯国际集成电路制造(上海)有限公司 金属栅极场效应晶体管及其制作方法
EP2639335B1 (en) * 2012-03-14 2015-09-16 Atotech Deutschland GmbH Alkaline plating bath for electroless deposition of cobalt alloys
US9768063B1 (en) 2016-06-30 2017-09-19 Lam Research Corporation Dual damascene fill
US11133218B1 (en) * 2020-01-23 2021-09-28 Tae Young Lee Semiconductor apparatus having through silicon via structure and manufacturing method thereof
CN113059179B (zh) * 2021-03-17 2022-06-03 电子科技大学 一种磁性钴颗粒的制备方法

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Also Published As

Publication number Publication date
CN101238239A (zh) 2008-08-06
WO2006135752A2 (en) 2006-12-21
EP1896630A2 (en) 2008-03-12
WO2006135752B1 (en) 2007-07-12
WO2006135752A3 (en) 2007-04-19
JP2008544078A (ja) 2008-12-04
US20060280860A1 (en) 2006-12-14
KR20080018945A (ko) 2008-02-28

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