JP2008533305A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008533305A5 JP2008533305A5 JP2008501923A JP2008501923A JP2008533305A5 JP 2008533305 A5 JP2008533305 A5 JP 2008533305A5 JP 2008501923 A JP2008501923 A JP 2008501923A JP 2008501923 A JP2008501923 A JP 2008501923A JP 2008533305 A5 JP2008533305 A5 JP 2008533305A5
- Authority
- JP
- Japan
- Prior art keywords
- rings
- sub
- central axis
- target
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 6
- 238000004544 sputter deposition Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 238000003491 array Methods 0.000 claims 1
- 230000004323 axial length Effects 0.000 claims 1
- 230000005389 magnetism Effects 0.000 claims 1
- 239000003870 refractory metal Substances 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66356805P | 2005-03-18 | 2005-03-18 | |
| US60/663,568 | 2005-03-18 | ||
| US11/218,756 US7618521B2 (en) | 2005-03-18 | 2005-09-02 | Split magnet ring on a magnetron sputter chamber |
| US11/218,756 | 2005-09-02 | ||
| PCT/US2006/008593 WO2006101772A2 (en) | 2005-03-18 | 2006-03-10 | Split magnet ring on a magnetron sputter chamber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008533305A JP2008533305A (ja) | 2008-08-21 |
| JP2008533305A5 true JP2008533305A5 (enExample) | 2009-04-23 |
| JP5043823B2 JP5043823B2 (ja) | 2012-10-10 |
Family
ID=37009168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008501923A Active JP5043823B2 (ja) | 2005-03-18 | 2006-03-10 | マグネトロンスパッタチャンバにおけるスプリットマグネットリング |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7618521B2 (enExample) |
| JP (1) | JP5043823B2 (enExample) |
| KR (1) | KR101321083B1 (enExample) |
| WO (1) | WO2006101772A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101303447B1 (ko) * | 2009-01-21 | 2013-09-05 | 엘지디스플레이 주식회사 | 유기전계발광표시장치의 증착장치 |
| US8043484B1 (en) | 2001-03-13 | 2011-10-25 | Novellus Systems, Inc. | Methods and apparatus for resputtering process that improves barrier coverage |
| US7781327B1 (en) | 2001-03-13 | 2010-08-24 | Novellus Systems, Inc. | Resputtering process for eliminating dielectric damage |
| US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
| US6764940B1 (en) | 2001-03-13 | 2004-07-20 | Novellus Systems, Inc. | Method for depositing a diffusion barrier for copper interconnect applications |
| US8298933B2 (en) | 2003-04-11 | 2012-10-30 | Novellus Systems, Inc. | Conformal films on semiconductor substrates |
| US7842605B1 (en) | 2003-04-11 | 2010-11-30 | Novellus Systems, Inc. | Atomic layer profiling of diffusion barrier and metal seed layers |
| US7855147B1 (en) | 2006-06-22 | 2010-12-21 | Novellus Systems, Inc. | Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer |
| US7645696B1 (en) | 2006-06-22 | 2010-01-12 | Novellus Systems, Inc. | Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer |
| US7510634B1 (en) | 2006-11-10 | 2009-03-31 | Novellus Systems, Inc. | Apparatus and methods for deposition and/or etch selectivity |
| US7682966B1 (en) | 2007-02-01 | 2010-03-23 | Novellus Systems, Inc. | Multistep method of depositing metal seed layers |
| US7897516B1 (en) | 2007-05-24 | 2011-03-01 | Novellus Systems, Inc. | Use of ultra-high magnetic fields in resputter and plasma etching |
| US7922880B1 (en) | 2007-05-24 | 2011-04-12 | Novellus Systems, Inc. | Method and apparatus for increasing local plasma density in magnetically confined plasma |
| US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| US7659197B1 (en) | 2007-09-21 | 2010-02-09 | Novellus Systems, Inc. | Selective resputtering of metal seed layers |
| US8017523B1 (en) | 2008-05-16 | 2011-09-13 | Novellus Systems, Inc. | Deposition of doped copper seed layers having improved reliability |
| JP5717444B2 (ja) * | 2008-06-26 | 2015-05-13 | 株式会社アルバック | カソードユニット及びこのカソードユニットを備えたスパッタリング装置 |
| US20100080928A1 (en) * | 2008-09-26 | 2010-04-01 | Tango Systems, Inc. | Confining Magnets In Sputtering Chamber |
| JP5373905B2 (ja) * | 2009-07-17 | 2013-12-18 | 株式会社アルバック | 成膜装置及び成膜方法 |
| CN102277559B (zh) * | 2010-06-10 | 2014-04-30 | 鸿富锦精密工业（深圳）有限公司 | 溅镀装置 |
| US11615947B2 (en) | 2020-09-01 | 2023-03-28 | Oem Group, Llc | Systems and methods for an improved magnetron electromagnetic assembly |
| US11948784B2 (en) | 2021-10-21 | 2024-04-02 | Applied Materials, Inc. | Tilted PVD source with rotating pedestal |
| US12136544B2 (en) * | 2021-11-05 | 2024-11-05 | Applied Materials, Inc. | Etch uniformity improvement for single turn internal coil PVD chamber |
| US12195843B2 (en) | 2023-01-19 | 2025-01-14 | Applied Materials, Inc. | Multicathode PVD system for high aspect ratio barrier seed deposition |
| KR102541735B1 (ko) | 2023-01-26 | 2023-06-13 | (주)함감속기제작소 | 파쇄기용 감속기 |
| US12417903B2 (en) | 2023-02-16 | 2025-09-16 | Applied Materials, Inc. | Physical vapor deposition source and chamber assembly |
| KR102814799B1 (ko) | 2024-07-16 | 2025-05-30 | 최연실 | 파쇄기용 감속기 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
| JP3311064B2 (ja) * | 1992-03-26 | 2002-08-05 | 株式会社東芝 | プラズマ生成装置、表面処理装置および表面処理方法 |
| US5415754A (en) * | 1993-10-22 | 1995-05-16 | Sierra Applied Sciences, Inc. | Method and apparatus for sputtering magnetic target materials |
| DE69403768T2 (de) * | 1993-12-28 | 1997-11-13 | Shinetsu Chemical Co | Dipolringmagnet für Magnetronzerstäubung oder Magnetronätzung |
| JP3725968B2 (ja) * | 1996-09-12 | 2005-12-14 | 信越化学工業株式会社 | プラズマ処理装置 |
| TW351825B (en) | 1996-09-12 | 1999-02-01 | Tokyo Electron Ltd | Plasma process device |
| US6398929B1 (en) * | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
| US6610184B2 (en) | 2001-11-14 | 2003-08-26 | Applied Materials, Inc. | Magnet array in conjunction with rotating magnetron for plasma sputtering |
| US7922865B2 (en) | 2000-09-01 | 2011-04-12 | Shin-Etsu Chemical Co., Ltd. | Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator |
| US6406599B1 (en) * | 2000-11-01 | 2002-06-18 | Applied Materials, Inc. | Magnetron with a rotating center magnet for a vault shaped sputtering target |
| JP2003309107A (ja) * | 2002-04-12 | 2003-10-31 | Tokyo Electron Ltd | 積層膜のエッチング方法 |
| JP4031691B2 (ja) * | 2002-09-20 | 2008-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2005
- 2005-09-02 US US11/218,756 patent/US7618521B2/en active Active
-
2006
- 2006-03-10 WO PCT/US2006/008593 patent/WO2006101772A2/en not_active Ceased
- 2006-03-10 KR KR1020077021095A patent/KR101321083B1/ko active Active
- 2006-03-10 JP JP2008501923A patent/JP5043823B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008533305A5 (enExample) | ||
| US8398834B2 (en) | Target utilization improvement for rotatable magnetrons | |
| JP2014525590A5 (enExample) | ||
| WO2006101772A3 (en) | Split magnet ring on a magnetron sputter chamber | |
| WO2015139503A1 (zh) | 磁控溅射腔室及磁控溅射设备 | |
| WO2010042349A3 (en) | High-aspect-ratio homopolar magnetic actuator | |
| JP2013149722A5 (enExample) | ||
| KR20140075804A (ko) | 물리 기상 증착 어레이 적용예들을 위한 다중 방향성 레이스트랙 회전식 캐소드 | |
| TWI739194B (zh) | 內襯組件、反應腔室及半導體加工設備 | |
| US8673124B2 (en) | Magnet unit and magnetron sputtering apparatus | |
| JPH04223099A (ja) | 磁気結合装置 | |
| TWI607106B (zh) | 磁控濺鍍用磁場產生裝置 | |
| JP2012012700A5 (enExample) | ||
| JP3629305B2 (ja) | マグネトロンスパッタカソード | |
| JP2005314773A5 (enExample) | ||
| JP5827344B2 (ja) | 処理装置およびシールド | |
| JP2015530482A (ja) | スパッタリング装置 | |
| JP4845836B2 (ja) | マグネトロンスパッタカソード | |
| MX363412B (es) | Fuente de evaporacion por arco. | |
| TW200722548A (en) | Sputering apparatus | |
| KR101629131B1 (ko) | 아크식 증발원 | |
| US9953808B2 (en) | Arc evaporation source | |
| KR101920840B1 (ko) | 스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템 | |
| KR20160089952A (ko) | 원통형 스퍼터링 캐소드 | |
| CN209816264U (zh) | 旋转阴极磁棒 |