KR101321083B1 - 마그네트론 스퍼터링 챔버 상의 스플릿 자석링 - Google Patents

마그네트론 스퍼터링 챔버 상의 스플릿 자석링 Download PDF

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KR101321083B1
KR101321083B1 KR1020077021095A KR20077021095A KR101321083B1 KR 101321083 B1 KR101321083 B1 KR 101321083B1 KR 1020077021095 A KR1020077021095 A KR 1020077021095A KR 20077021095 A KR20077021095 A KR 20077021095A KR 101321083 B1 KR101321083 B1 KR 101321083B1
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South Korea
Prior art keywords
sputtering
central axis
magnets
magnet ring
target
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KR1020077021095A
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Korean (ko)
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KR20070112187A (ko
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진유 푸
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077021095A 2005-03-18 2006-03-10 마그네트론 스퍼터링 챔버 상의 스플릿 자석링 Active KR101321083B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US66356805P 2005-03-18 2005-03-18
US60/663,568 2005-03-18
US11/218,756 US7618521B2 (en) 2005-03-18 2005-09-02 Split magnet ring on a magnetron sputter chamber
US11/218,756 2005-09-02
PCT/US2006/008593 WO2006101772A2 (en) 2005-03-18 2006-03-10 Split magnet ring on a magnetron sputter chamber

Publications (2)

Publication Number Publication Date
KR20070112187A KR20070112187A (ko) 2007-11-22
KR101321083B1 true KR101321083B1 (ko) 2013-10-22

Family

ID=37009168

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077021095A Active KR101321083B1 (ko) 2005-03-18 2006-03-10 마그네트론 스퍼터링 챔버 상의 스플릿 자석링

Country Status (4)

Country Link
US (1) US7618521B2 (enExample)
JP (1) JP5043823B2 (enExample)
KR (1) KR101321083B1 (enExample)
WO (1) WO2006101772A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102541735B1 (ko) 2023-01-26 2023-06-13 (주)함감속기제작소 파쇄기용 감속기
KR102814799B1 (ko) 2024-07-16 2025-05-30 최연실 파쇄기용 감속기

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101303447B1 (ko) * 2009-01-21 2013-09-05 엘지디스플레이 주식회사 유기전계발광표시장치의 증착장치
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
JP5717444B2 (ja) * 2008-06-26 2015-05-13 株式会社アルバック カソードユニット及びこのカソードユニットを備えたスパッタリング装置
US20100080928A1 (en) * 2008-09-26 2010-04-01 Tango Systems, Inc. Confining Magnets In Sputtering Chamber
JP5373905B2 (ja) * 2009-07-17 2013-12-18 株式会社アルバック 成膜装置及び成膜方法
CN102277559B (zh) * 2010-06-10 2014-04-30 鸿富锦精密工业（深圳）有限公司 溅镀装置
US11615947B2 (en) 2020-09-01 2023-03-28 Oem Group, Llc Systems and methods for an improved magnetron electromagnetic assembly
US11948784B2 (en) 2021-10-21 2024-04-02 Applied Materials, Inc. Tilted PVD source with rotating pedestal
US12136544B2 (en) * 2021-11-05 2024-11-05 Applied Materials, Inc. Etch uniformity improvement for single turn internal coil PVD chamber
US12195843B2 (en) 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition
US12417903B2 (en) 2023-02-16 2025-09-16 Applied Materials, Inc. Physical vapor deposition source and chamber assembly

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
US20030089601A1 (en) * 2001-11-14 2003-05-15 Peijun Ding Magnet array in conjunction with rotating magnetron for plasma sputtering

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311064B2 (ja) * 1992-03-26 2002-08-05 株式会社東芝 プラズマ生成装置、表面処理装置および表面処理方法
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
DE69403768T2 (de) * 1993-12-28 1997-11-13 Shinetsu Chemical Co Dipolringmagnet für Magnetronzerstäubung oder Magnetronätzung
JP3725968B2 (ja) * 1996-09-12 2005-12-14 信越化学工業株式会社 プラズマ処理装置
TW351825B (en) 1996-09-12 1999-02-01 Tokyo Electron Ltd Plasma process device
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US7922865B2 (en) 2000-09-01 2011-04-12 Shin-Etsu Chemical Co., Ltd. Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator
US6406599B1 (en) * 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
JP2003309107A (ja) * 2002-04-12 2003-10-31 Tokyo Electron Ltd 積層膜のエッチング方法
JP4031691B2 (ja) * 2002-09-20 2008-01-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
US20030089601A1 (en) * 2001-11-14 2003-05-15 Peijun Ding Magnet array in conjunction with rotating magnetron for plasma sputtering

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102541735B1 (ko) 2023-01-26 2023-06-13 (주)함감속기제작소 파쇄기용 감속기
KR102814799B1 (ko) 2024-07-16 2025-05-30 최연실 파쇄기용 감속기

Also Published As

Publication number Publication date
JP5043823B2 (ja) 2012-10-10
KR20070112187A (ko) 2007-11-22
US20060207873A1 (en) 2006-09-21
JP2008533305A (ja) 2008-08-21
WO2006101772A3 (en) 2007-09-07
WO2006101772A2 (en) 2006-09-28
US7618521B2 (en) 2009-11-17

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