JP5043823B2 - マグネトロンスパッタチャンバにおけるスプリットマグネットリング - Google Patents

マグネトロンスパッタチャンバにおけるスプリットマグネットリング Download PDF

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Publication number
JP5043823B2
JP5043823B2 JP2008501923A JP2008501923A JP5043823B2 JP 5043823 B2 JP5043823 B2 JP 5043823B2 JP 2008501923 A JP2008501923 A JP 2008501923A JP 2008501923 A JP2008501923 A JP 2008501923A JP 5043823 B2 JP5043823 B2 JP 5043823B2
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Japan
Prior art keywords
sputter
target
magnetic
central axis
magnet
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JP2008501923A
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Japanese (ja)
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JP2008533305A (ja
JP2008533305A5 (enExample
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シンユー フ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2008533305A5 publication Critical patent/JP2008533305A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008501923A 2005-03-18 2006-03-10 マグネトロンスパッタチャンバにおけるスプリットマグネットリング Active JP5043823B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US66356805P 2005-03-18 2005-03-18
US60/663,568 2005-03-18
US11/218,756 US7618521B2 (en) 2005-03-18 2005-09-02 Split magnet ring on a magnetron sputter chamber
US11/218,756 2005-09-02
PCT/US2006/008593 WO2006101772A2 (en) 2005-03-18 2006-03-10 Split magnet ring on a magnetron sputter chamber

Publications (3)

Publication Number Publication Date
JP2008533305A JP2008533305A (ja) 2008-08-21
JP2008533305A5 JP2008533305A5 (enExample) 2009-04-23
JP5043823B2 true JP5043823B2 (ja) 2012-10-10

Family

ID=37009168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008501923A Active JP5043823B2 (ja) 2005-03-18 2006-03-10 マグネトロンスパッタチャンバにおけるスプリットマグネットリング

Country Status (4)

Country Link
US (1) US7618521B2 (enExample)
JP (1) JP5043823B2 (enExample)
KR (1) KR101321083B1 (enExample)
WO (1) WO2006101772A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101303447B1 (ko) * 2009-01-21 2013-09-05 엘지디스플레이 주식회사 유기전계발광표시장치의 증착장치
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
JP5717444B2 (ja) * 2008-06-26 2015-05-13 株式会社アルバック カソードユニット及びこのカソードユニットを備えたスパッタリング装置
US20100080928A1 (en) * 2008-09-26 2010-04-01 Tango Systems, Inc. Confining Magnets In Sputtering Chamber
KR20120023799A (ko) * 2009-07-17 2012-03-13 가부시키가이샤 아루박 성막 장치 및 성막 방법
CN102277559B (zh) * 2010-06-10 2014-04-30 鸿富锦精密工业（深圳）有限公司 溅镀装置
US11615947B2 (en) * 2020-09-01 2023-03-28 Oem Group, Llc Systems and methods for an improved magnetron electromagnetic assembly
US11948784B2 (en) 2021-10-21 2024-04-02 Applied Materials, Inc. Tilted PVD source with rotating pedestal
US12136544B2 (en) * 2021-11-05 2024-11-05 Applied Materials, Inc. Etch uniformity improvement for single turn internal coil PVD chamber
US12195843B2 (en) 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition
KR102541735B1 (ko) 2023-01-26 2023-06-13 (주)함감속기제작소 파쇄기용 감속기
US12417903B2 (en) 2023-02-16 2025-09-16 Applied Materials, Inc. Physical vapor deposition source and chamber assembly
KR102814799B1 (ko) 2024-07-16 2025-05-30 최연실 파쇄기용 감속기

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
JP3311064B2 (ja) * 1992-03-26 2002-08-05 株式会社東芝 プラズマ生成装置、表面処理装置および表面処理方法
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
EP0661728B1 (en) * 1993-12-28 1997-06-11 Shin-Etsu Chemical Co., Ltd. Dipole ring magnet for use in magnetron sputtering or magnetron etching
JP3725968B2 (ja) * 1996-09-12 2005-12-14 信越化学工業株式会社 プラズマ処理装置
TW351825B (en) 1996-09-12 1999-02-01 Tokyo Electron Ltd Plasma process device
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
CN100568461C (zh) * 2000-09-01 2009-12-09 信越化学工业株式会社 产生磁等离子体的磁场发生装置
US6406599B1 (en) * 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
JP2003309107A (ja) * 2002-04-12 2003-10-31 Tokyo Electron Ltd 積層膜のエッチング方法
JP4031691B2 (ja) * 2002-09-20 2008-01-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
JP2008533305A (ja) 2008-08-21
US20060207873A1 (en) 2006-09-21
KR20070112187A (ko) 2007-11-22
WO2006101772A2 (en) 2006-09-28
KR101321083B1 (ko) 2013-10-22
WO2006101772A3 (en) 2007-09-07
US7618521B2 (en) 2009-11-17

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