JP2008532285A - SnSeベースの限定リプログラマブルセル - Google Patents
SnSeベースの限定リプログラマブルセル Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 120
- -1 tin chalcogenide Chemical class 0.000 claims abstract description 86
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 51
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052718 tin Inorganic materials 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229910052709 silver Inorganic materials 0.000 claims description 26
- 239000004332 silver Substances 0.000 claims description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 239000005387 chalcogenide glass Substances 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 4
- 229910052752 metalloid Inorganic materials 0.000 claims 3
- 150000002738 metalloids Chemical class 0.000 claims 3
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 claims 2
- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000470 constituent Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 91
- 210000004027 cell Anatomy 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 10
- 239000011669 selenium Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- MFIWAIVSOUGHLI-UHFFFAOYSA-N selenium;tin Chemical compound [Sn]=[Se] MFIWAIVSOUGHLI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052699 polonium Inorganic materials 0.000 description 2
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005829 GeS Inorganic materials 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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Abstract
【選択図】図1
Description
本発明の上記及びその他の利点並びに特徴は、添付図面に関して以下に提供される典型的な実施形態の詳細な説明から、一層明らかになる。
Claims (69)
- 第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間の、カルコゲナイド材料又は半金属材料からなる材料層と、
前記カルコゲナイド材料層と前記第2の電極との間の錫カルコゲナイド層とを備え、
前記材料層の厚さに対する前記錫カルコゲナイド層の厚さの比が約4対3よりも小さい、
ことを特徴とするメモリデバイス。 - 前記材料層はカルコゲナイドガラスからなることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層は結晶カルコゲナイド材料からなることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層はゲルマニウム層であることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層はゲルマニウムテルライドからなることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層はGeXSe100−Xからなることを特徴とする請求項1記載のメモリデバイス。
- 前記GeXSe100−Xは、ほぼGe33Se67からほぼGe60Se40までの間の化学量論を有することを特徴とする請求項5記載のメモリデバイス。
- 前記錫カルコゲナイド層と前記第2の電極との間に金属層を更に備えることを特徴とする請求項1記載のメモリデバイス。
- 前記金属層は銀からなることを特徴とする請求項1記載のメモリデバイス。
- 前記錫カルコゲナイド層はSn1+/−XSeからなり、ここでxは約1と約0との間であることを特徴とする請求項1記載のメモリデバイス。
- 前記錫カルコゲナイド層は錫テルライドからなる層であることを特徴とする請求項1記載のメモリデバイス。
- 前記第1の電極と前記第2の電極の少なくとも一方はタングステンからなることを特徴とする請求項1記載のメモリデバイス。
- 前記第2の電極は金属含有層上にあって、銀からなることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層及び前記錫カルコゲナイド層は絶縁層内の通路の中に設けられていることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層及び前記錫カルコゲナイド層は基板上のブランケット層であり、前記第2の電極はメモリ素子の位置を画定することを特徴とする請求項1記載のメモリデバイス。
- 前記材料層の厚さ及び前記錫カルコゲナイド層の厚さは、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さであることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層の厚さ及び前記錫カルコゲナイド層の厚さは、前記メモリデバイスが一度プログラムされた後は消去不可能となるような厚さであることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層の厚さは約300Åであり、前記錫カルコゲナイド層の厚さは約100Åから約400Åまでの間であることを特徴とする請求項1記載のメモリデバイス。
- 前記錫カルコゲナイド層と前記第2の電極との間に金属層を更に備え、該金属層は約300Åから約500Åまでの厚さを有していることを特徴とする請求項18記載のメモリデバイス。
- 前記材料層の厚さは約100Åと約1000Åとの間であることを特徴とする請求項1記載のメモリデバイス。
- 前記材料層の厚さに対する前記錫カルコゲナイド層の厚さの比は約1対3と約4対3との間であることを特徴とする請求項1記載のメモリデバイス。
- 基板と、
前記基板上の導電性アドレス線と、
前記導電性アドレス線上の第1の電極と、
前記第1の電極上の結晶カルコゲナイド材料層と、
前記結晶カルコゲナイド材料層上の錫カルコゲナイド層と、
前記金属含有層上の第2の電極と、
を備えることを特徴とするメモリデバイス。 - 前記錫カルコゲナイド層と前記第2の電極との間に金属層を更に備えることを特徴とする請求項22記載のメモリデバイス。
- 前記結晶カルコゲナイド材料層の厚さと前記錫カルコゲナイド層の厚さは、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さであることを特徴とする請求項22記載のメモリデバイス。
- 前記結晶カルコゲナイド材料層の厚さに対する前記錫カルコゲナイド層の厚さの比は約4対3よりも小さいことを特徴とする請求項22記載のメモリデバイス。
- 基板と、
前記基板上の導電性アドレス線と、
前記導電性アドレス線上の第1の電極と、
前記第1の電極上のゲルマニウム層と、
前記ゲルマニウム層上の錫カルコゲナイド層と、
前記金属含有層上の第2の電極と、
を備えることを特徴とするメモリデバイス。 - 前記錫カルコゲナイド層と前記第2の電極との間に金属層を更に備えることを特徴とする請求項26記載のメモリデバイス。
- 前記ゲルマニウム層の厚さと前記錫カルコゲナイド層の厚さは、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さであることを特徴とする請求項26記載のメモリデバイス。
- 前記ゲルマニウム層の厚さに対する前記錫カルコゲナイド層の厚さの比は約4対3よりも小さいことを特徴とする請求項26記載のメモリデバイス。
- プロセッサと、
或る限られた回数だけプログラム可能なように構成されたメモリデバイスと、を備えたプロセッサシステムであって、
前記メモリデバイスは、
第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間の、カルコゲナイド材料又は半金属材料からなる材料層と、
前記カルコゲナイド材料層と前記第2の電極との間の錫カルコゲナイド層とを備え、
前記材料層の厚さに対する前記錫カルコゲナイド層の厚さの比が約4対3よりも小さい、
ことを特徴とするプロセッサシステム。 - 前記材料層はカルコゲナイドガラスからなることを特徴とする請求項30記載のプロセッサシステム。
- 前記材料層は結晶カルコゲナイド材料からなることを特徴とする請求項30記載のプロセッサシステム。
- 前記材料層はゲルマニウム層であることを特徴とする請求項30記載のプロセッサシステム。
- 前記錫カルコゲナイド層と前記第2の電極との間に金属層を更に備えることを特徴とする請求項30記載のプロセッサシステム。
- 前記金属層は銀からなることを特徴とする請求項34記載のプロセッサシステム。
- 基板を供給するステップと、
前記基板上に第1の電極を形成するステップと、
前記基板上に第2の電極を形成するステップと、
前記第1の電極と前記第2の電極との間にカルコゲナイド材料又は半金属材料からなる材料層を形成するステップと、
前記カルコゲナイド材料層と前記第2の電極との間に錫カルコゲナイド層を形成するステップとを備え、
前記材料層及び前記錫カルコゲナイド層は、前記材料層の厚さに対する前記錫カルコゲナイド層の厚さの比が約4対3よりも小さくなるように形成される、
ことを特徴とするメモリデバイスを形成する方法。 - 前記材料層を形成するステップは、カルコゲナイドガラスからなる層を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層を形成するステップは、結晶カルコゲナイド材料からなる層を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層を形成するステップは、ゲルマニウム層を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層を形成するステップは、ゲルマニウムテルライドからなる層を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層を形成するステップは、前記材料層はGeXSe100−Xからなる層を形成することからなることを特徴とする請求項36記載の方法。
- 前記GeXSe100−Xは、ほぼGe33Se67からほぼGe60Se40までの間の化学量論を有して形成されることを特徴とする請求項41記載の方法。
- 前記錫カルコゲナイド層と前記第2の電極との間に金属層を形成するステップを更に備えることを特徴とする請求項36記載の方法。
- 前記金属層を形成するステップは、銀からなる層を形成することからなることを特徴とする請求項36記載の方法。
- 前記錫カルコゲナイド層を形成するステップは、Sn1+/−XSe層を形成することからなり、ここでxは約1と約0との間であることを特徴とする請求項36記載の方法。
- 錫カルコゲナイド層を形成するステップは、錫テルライドからなる層を形成することからなることを特徴とする請求項36記載の方法。
- 前記第1及び第2の電極の少なくとも一方はタングステンからなるように形成されていることを特徴とする請求項36記載の方法。
- 前記材料層及び前記錫カルコゲナイド層を形成するステップは、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さを有する前記前記材料層及び前記錫カルコゲナイド層を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層及び前記錫カルコゲナイド層を形成するステップは、前記メモリデバイスが一度プログラムされた後は消去不可能となるような厚さを有する前記前記材料層及び前記錫カルコゲナイド層を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層は約300Åの厚さを有するように形成され、前記錫カルコゲナイド層は約100Åから約400Åまでの間の厚さを有するように形成されることを特徴とする請求項36記載の方法。
- 前記錫カルコゲナイド層と前記第2の電極との間に銀層を形成するステップを更に備え、該銀層は約300Åから約500Åまでの厚さを有するように形成されることを特徴とする請求項50記載の方法。
- 前記材料層は約100Åと約1000Åとの間の厚さを有するように形成されることを特徴とする請求項36記載の方法。
- 前記錫カルコゲナイド層及び前記材料層は、前記材料層の厚さに対する前記錫カルコゲナイド層の厚さの比が約1対3と約4対3との間であるように形成されることを特徴とする請求項36記載の方法。
- 前記第1の電極に電気的に接続されたアドレス線を供給するステップを更に備えることを特徴とする請求項36記載の方法。
- 前記第1の電極を形成するステップは、アドレス線/電極の結合構造を形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層及び前記錫カルコゲナイド層を形成するステップは、前記材料層及び前記錫カルコゲナイド層をブランケット堆積により形成することからなることを特徴とする請求項36記載の方法。
- 前記材料層及び前記錫カルコゲナイド層をエッチングして垂直スタックを形成するステップを更に備えることを特徴とする請求項56記載の方法。
- 絶縁層の中に通路を形成するステップを更に備え、前記材料層及び前記錫カルコゲナイド層を形成するステップは前記通路の中に前記材料層及び前記錫カルコゲナイド層を形成することからなることを特徴とする請求項36記載の方法。
- メモリ素子を形成する方法であって、
基板を供給するステップと、
前記基板上に導電層を形成するステップと、
前記基板上に第1の電極を形成するステップと、
前記導電層及び前記基板の上に第1の絶縁層を形成するステップと、
前記第1の絶縁層に開口を形成して、該開口内に前記導電層の一部分を露出させるステップと、
前記開口内及び前記第1の電極上に、カルコゲナイド材料又はゲルマニウムである材料層を形成するステップと、
前記開口内及び前記材料層上に錫カルコゲナイド層を形成するステップであって、前記材料層及び前記錫カルコゲナイド層は、前記材料層の厚さに対する前記錫カルコゲナイド層の厚さの比が約4対3よりも小さくなるように形成されるステップと、
前記錫カルコゲナイド層上に第2の電極層を形成するステップと、
前記第2の電極層上にマスクを供給するステップと、
前記材料層、前記錫カルコゲナイド層、及び前記第2の電極をエッチングしてスタックを形成するステップと、
を備えることを特徴とする方法。 - 前記材料層を形成するステップはカルコゲナイドガラス層を形成することからなることを特徴とする請求項59記載の方法。
- 前記材料層を形成するステップは結晶カルコゲナイド材料層を形成することからなることを特徴とする請求項59記載の方法。
- 前記材料層を形成するステップはゲルマニウム層を形成することからなることを特徴とする請求項59記載の方法。
- 前記材料層及び前記錫カルコゲナイド層を形成するステップは、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さを有する前記材料層及び前記錫カルコゲナイド層を形成することからなることを特徴とする請求項59記載の方法。
- メモリデバイスを形成する方法であって、
基板を供給するステップと、
前記基板上に第1の電極を形成するステップと、
前記基板上に第2の電極を形成するステップと、
前記第1の電極と前記第2の電極との間に結晶カルコゲナイド材料層を形成するステップと、
前記カルコゲナイド材料層と前記第2の電極との間に錫カルコゲナイド層を形成するステップと、
前記錫カルコゲナイド層と前記第2の電極との間に銀層を形成するステップと、
を備えることを特徴とする方法。 - 前記結晶カルコゲナイド材料層及び前記錫カルコゲナイド層は、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さを有するように形成されることを特徴とする請求項64記載の方法。
- 前記錫カルコゲナイド層及び前記結晶カルコゲナイド材料層は、前記結晶カルコゲナイド材料層の厚さに対する前記錫カルコゲナイド層の厚さの比が約4対3よりも小さいように形成されることを特徴とする請求項64記載の方法。
- メモリデバイスを形成する方法であって、
基板を供給するステップと、
前記基板上に第1の電極を形成するステップと、
前記基板上に第2の電極を形成するステップと、
前記第1の電極と前記第2の電極との間にゲルマニウム層を形成するステップと、
前記カルコゲナイド材料層と前記第2の電極との間に錫カルコゲナイド層を形成するステップと、
前記錫カルコゲナイド層と前記第2の電極との間に銀層を形成するステップと、
を備えることを特徴とする方法。 - 前記ゲルマニウム層及び前記錫カルコゲナイド層は、前記メモリデバイスが或る限られた回数だけプログラム可能であるような厚さを有するように形成されることを特徴とする請求項67記載の方法。
- 前記錫カルコゲナイド層及び前記ゲルマニウム層は、前記ゲルマニウム層の厚さに対する前記錫カルコゲナイド層の厚さの比が約4対3よりも小さいように形成されることを特徴とする請求項67記載の方法。
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|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |