ATE331303T1 - Programmierbare oberflächenkontrollbauelemente sowie deren anwendung - Google Patents

Programmierbare oberflächenkontrollbauelemente sowie deren anwendung

Info

Publication number
ATE331303T1
ATE331303T1 AT02789304T AT02789304T ATE331303T1 AT E331303 T1 ATE331303 T1 AT E331303T1 AT 02789304 T AT02789304 T AT 02789304T AT 02789304 T AT02789304 T AT 02789304T AT E331303 T1 ATE331303 T1 AT E331303T1
Authority
AT
Austria
Prior art keywords
surface control
application
programmable surface
control components
programmable
Prior art date
Application number
AT02789304T
Other languages
English (en)
Inventor
Michael N Kozicki
Original Assignee
Univ Arizona
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Arizona filed Critical Univ Arizona
Application granted granted Critical
Publication of ATE331303T1 publication Critical patent/ATE331303T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
    • H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H03H9/2457—Clamped-free beam resonators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
AT02789304T 2001-10-26 2002-10-28 Programmierbare oberflächenkontrollbauelemente sowie deren anwendung ATE331303T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33960401P 2001-10-26 2001-10-26

Publications (1)

Publication Number Publication Date
ATE331303T1 true ATE331303T1 (de) 2006-07-15

Family

ID=23329789

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02789304T ATE331303T1 (de) 2001-10-26 2002-10-28 Programmierbare oberflächenkontrollbauelemente sowie deren anwendung

Country Status (7)

Country Link
US (3) US7006376B2 (de)
EP (1) EP1440485B1 (de)
AT (1) ATE331303T1 (de)
AU (2) AU2002353905B2 (de)
CA (1) CA2465277A1 (de)
DE (1) DE60212679D1 (de)
WO (2) WO2003036736A2 (de)

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FR2905028B1 (fr) * 2006-08-21 2008-12-19 Commissariat Energie Atomique Dispositif de memoire electrochimique
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KR101480292B1 (ko) * 2008-03-17 2015-01-12 삼성전자주식회사 상변화막을 포함하는 반도체 소자의 형성 방법
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US8120955B2 (en) 2009-02-13 2012-02-21 Actel Corporation Array and control method for flash based FPGA cell
US8320178B2 (en) 2009-07-02 2012-11-27 Actel Corporation Push-pull programmable logic device cell
US8878153B2 (en) * 2009-12-08 2014-11-04 Nec Corporation Variable resistance element having gradient of diffusion coefficient of ion conducting layer
JP2012064808A (ja) * 2010-09-16 2012-03-29 Sony Corp 記憶素子および記憶装置
WO2012065083A1 (en) 2010-11-14 2012-05-18 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And Dendritic metal structures, methods for making dendritic metal structures, and devices including them
US9208870B2 (en) 2012-09-13 2015-12-08 Adesto Technologies Corporation Multi-port memory devices and methods having programmable impedance elements
EP3007155B1 (de) 2013-03-12 2018-10-24 Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University Fälschungssicherung von etiketten mittels bildverarbeitung von dendritischen strukturen als physikalisch nicht klonbare funktion
WO2016073910A1 (en) 2014-11-07 2016-05-12 Arizona Board Of Regents On Behalf Of Arizona State University Information coding in dendritic structures and tags
US10710070B2 (en) 2015-11-24 2020-07-14 Arizona Board Of Regents On Behalf Of Arizona State University Low-voltage microfluidic valve device and system for regulating the flow of fluid
US10270451B2 (en) 2015-12-17 2019-04-23 Microsemi SoC Corporation Low leakage ReRAM FPGA configuration cell
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US11127694B2 (en) 2017-03-23 2021-09-21 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with copper-silicon oxide programmable metallization cells
US10466969B2 (en) 2017-05-08 2019-11-05 Arizona Board Of Regents On Behalf Of Arizona State University Tunable true random number generator using programmable metallization cell(s)
US11430233B2 (en) 2017-06-16 2022-08-30 Arizona Board Of Regents On Behalf Of Arizona State University Polarized scanning of dendritic identifiers
DE112018004134T5 (de) 2017-08-11 2020-04-23 Microsemi Soc Corp. Schaltlogik und verfahren zur programmierung von resistiven direktzugriffs-speichervorrichtungen
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US11935843B2 (en) 2019-12-09 2024-03-19 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with silicon-rich dielectric devices

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Also Published As

Publication number Publication date
WO2003036735A3 (en) 2003-11-06
AU2002353905B2 (en) 2006-02-02
EP1440485A2 (de) 2004-07-28
EP1440485B1 (de) 2006-06-21
US20030168651A1 (en) 2003-09-11
WO2003036736A3 (en) 2003-12-18
WO2003036735A2 (en) 2003-05-01
WO2003036736A2 (en) 2003-05-01
US20060118423A1 (en) 2006-06-08
CA2465277A1 (en) 2003-05-01
US7763158B2 (en) 2010-07-27
US7227169B2 (en) 2007-06-05
DE60212679D1 (de) 2006-08-03
US20030210564A1 (en) 2003-11-13
US7006376B2 (en) 2006-02-28
AU2002340314A1 (en) 2003-05-06

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties