JP2008523616A5 - - Google Patents
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- Publication number
- JP2008523616A5 JP2008523616A5 JP2007545456A JP2007545456A JP2008523616A5 JP 2008523616 A5 JP2008523616 A5 JP 2008523616A5 JP 2007545456 A JP2007545456 A JP 2007545456A JP 2007545456 A JP2007545456 A JP 2007545456A JP 2008523616 A5 JP2008523616 A5 JP 2008523616A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- polishing solution
- organic acid
- monofunctional
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/009,608 US20060124026A1 (en) | 2004-12-10 | 2004-12-10 | Polishing solutions |
| US11/009,608 | 2004-12-10 | ||
| PCT/US2005/038372 WO2006065347A2 (en) | 2004-12-10 | 2005-10-25 | Polishing solutions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008523616A JP2008523616A (ja) | 2008-07-03 |
| JP2008523616A5 true JP2008523616A5 (cg-RX-API-DMAC7.html) | 2008-12-11 |
| JP5198870B2 JP5198870B2 (ja) | 2013-05-15 |
Family
ID=36582316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007545456A Expired - Fee Related JP5198870B2 (ja) | 2004-12-10 | 2005-10-25 | 研磨溶液 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20060124026A1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1833937B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5198870B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20070087647A (cg-RX-API-DMAC7.html) |
| CN (1) | CN101076575B (cg-RX-API-DMAC7.html) |
| AT (1) | ATE469952T1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE602005021699D1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI473866B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2006065347A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7591956B2 (en) * | 2006-05-03 | 2009-09-22 | OMG Electronic Chemicals, Inc. | Method and composition for selectively stripping nickel from a substrate |
| US20080220610A1 (en) * | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
| US20090031636A1 (en) * | 2007-08-03 | 2009-02-05 | Qianqiu Ye | Polymeric barrier removal polishing slurry |
| JP5135002B2 (ja) | 2008-02-28 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| WO2012008237A1 (ja) | 2010-07-14 | 2012-01-19 | 日立化成工業株式会社 | 銅研磨用研磨液及びそれを用いた研磨方法 |
| US9388330B2 (en) * | 2012-12-17 | 2016-07-12 | Fuji Engineering Co., Ltd. | Bag containing blasting material |
| CN104745084B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种用于铝的化学机械抛光液及使用方法 |
| US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| JP6720791B2 (ja) * | 2016-09-13 | 2020-07-08 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
| US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| KR102714939B1 (ko) * | 2019-06-06 | 2024-10-07 | 가부시끼가이샤 레조낙 | 연마액 및 연마 방법 |
| US20260201570A1 (en) * | 2022-12-29 | 2026-07-16 | Basf Se | Composition for selectively removing oxide compounds and etching residues of one or both of co and cu |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE663291A (cg-RX-API-DMAC7.html) * | 1964-05-04 | |||
| US3754878A (en) * | 1971-01-04 | 1973-08-28 | Colgate Palmolive Co | Abrasive cleaning compositions |
| US3756957A (en) * | 1971-03-15 | 1973-09-04 | Furukawa Electric Co Ltd | Solutions for chemical dissolution treatment of metallic materials |
| JPS5435125B2 (cg-RX-API-DMAC7.html) * | 1972-01-28 | 1979-10-31 | ||
| SE425007B (sv) * | 1976-01-05 | 1982-08-23 | Shipley Co | Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma |
| US4954142A (en) * | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4987099A (en) * | 1989-12-29 | 1991-01-22 | North American Philips Corp. | Method for selectively filling contacts or vias or various depths with CVD tungsten |
| US6546939B1 (en) * | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
| US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| US6410494B2 (en) * | 1996-06-05 | 2002-06-25 | Wako Pure Chemical Industries, Ltd. | Cleaning agent |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
| US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
| US6435947B2 (en) * | 1998-05-26 | 2002-08-20 | Cabot Microelectronics Corporation | CMP polishing pad including a solid catalyst |
| US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| AU7450900A (en) * | 1999-09-30 | 2001-04-30 | Showa Denko Kabushiki Kaisha | Polishing composition and method |
| JP3606806B2 (ja) * | 2000-05-12 | 2005-01-05 | 花王株式会社 | 研磨液組成物 |
| JP2002134443A (ja) * | 2000-10-19 | 2002-05-10 | Ebara Corp | 研磨方法及び研磨工具 |
| US20020068454A1 (en) * | 2000-12-01 | 2002-06-06 | Applied Materials, Inc. | Method and composition for the removal of residual materials during substrate planarization |
| US6800218B2 (en) * | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
| JP2003170349A (ja) * | 2001-09-27 | 2003-06-17 | Fujimi Inc | 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法 |
| JP3813865B2 (ja) * | 2001-12-11 | 2006-08-23 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
| US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
| US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
| JP4083528B2 (ja) * | 2002-10-01 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| JP4249008B2 (ja) * | 2003-12-25 | 2009-04-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
| JP2006179845A (ja) * | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
-
2004
- 2004-12-10 US US11/009,608 patent/US20060124026A1/en not_active Abandoned
-
2005
- 2005-10-25 CN CN200580042525.0A patent/CN101076575B/zh not_active Expired - Fee Related
- 2005-10-25 AT AT05818832T patent/ATE469952T1/de not_active IP Right Cessation
- 2005-10-25 JP JP2007545456A patent/JP5198870B2/ja not_active Expired - Fee Related
- 2005-10-25 EP EP05818832A patent/EP1833937B1/en not_active Expired - Lifetime
- 2005-10-25 WO PCT/US2005/038372 patent/WO2006065347A2/en not_active Ceased
- 2005-10-25 DE DE602005021699T patent/DE602005021699D1/de not_active Expired - Lifetime
- 2005-10-25 KR KR1020077015655A patent/KR20070087647A/ko not_active Ceased
- 2005-11-16 TW TW94140265A patent/TWI473866B/zh not_active IP Right Cessation
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