TWI473866B - 拋光溶液 - Google Patents

拋光溶液 Download PDF

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Publication number
TWI473866B
TWI473866B TW94140265A TW94140265A TWI473866B TW I473866 B TWI473866 B TW I473866B TW 94140265 A TW94140265 A TW 94140265A TW 94140265 A TW94140265 A TW 94140265A TW I473866 B TWI473866 B TW I473866B
Authority
TW
Taiwan
Prior art keywords
acid
polishing solution
polishing
removal rate
organic acid
Prior art date
Application number
TW94140265A
Other languages
English (en)
Chinese (zh)
Other versions
TW200632060A (en
Inventor
史考特 寇洛吉 傑佛瑞
Original Assignee
３Ｍ新設資產公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ３Ｍ新設資產公司 filed Critical ３Ｍ新設資產公司
Publication of TW200632060A publication Critical patent/TW200632060A/zh
Application granted granted Critical
Publication of TWI473866B publication Critical patent/TWI473866B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW94140265A 2004-12-10 2005-11-16 拋光溶液 TWI473866B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/009,608 US20060124026A1 (en) 2004-12-10 2004-12-10 Polishing solutions

Publications (2)

Publication Number Publication Date
TW200632060A TW200632060A (en) 2006-09-16
TWI473866B true TWI473866B (zh) 2015-02-21

Family

ID=36582316

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94140265A TWI473866B (zh) 2004-12-10 2005-11-16 拋光溶液

Country Status (9)

Country Link
US (1) US20060124026A1 (cg-RX-API-DMAC7.html)
EP (1) EP1833937B1 (cg-RX-API-DMAC7.html)
JP (1) JP5198870B2 (cg-RX-API-DMAC7.html)
KR (1) KR20070087647A (cg-RX-API-DMAC7.html)
CN (1) CN101076575B (cg-RX-API-DMAC7.html)
AT (1) ATE469952T1 (cg-RX-API-DMAC7.html)
DE (1) DE602005021699D1 (cg-RX-API-DMAC7.html)
TW (1) TWI473866B (cg-RX-API-DMAC7.html)
WO (1) WO2006065347A2 (cg-RX-API-DMAC7.html)

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US7591956B2 (en) * 2006-05-03 2009-09-22 OMG Electronic Chemicals, Inc. Method and composition for selectively stripping nickel from a substrate
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
JP5135002B2 (ja) 2008-02-28 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
WO2012008237A1 (ja) 2010-07-14 2012-01-19 日立化成工業株式会社 銅研磨用研磨液及びそれを用いた研磨方法
US9388330B2 (en) * 2012-12-17 2016-07-12 Fuji Engineering Co., Ltd. Bag containing blasting material
CN104745084B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种用于铝的化学机械抛光液及使用方法
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
JP6720791B2 (ja) * 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102714939B1 (ko) * 2019-06-06 2024-10-07 가부시끼가이샤 레조낙 연마액 및 연마 방법
US20260201570A1 (en) * 2022-12-29 2026-07-16 Basf Se Composition for selectively removing oxide compounds and etching residues of one or both of co and cu

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200417600A (en) * 2002-12-10 2004-09-16 Advanced Tech Materials Passivative chemical mechanical polishing composition for copper film planarization

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US3754878A (en) * 1971-01-04 1973-08-28 Colgate Palmolive Co Abrasive cleaning compositions
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US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200417600A (en) * 2002-12-10 2004-09-16 Advanced Tech Materials Passivative chemical mechanical polishing composition for copper film planarization

Also Published As

Publication number Publication date
EP1833937B1 (en) 2010-06-02
ATE469952T1 (de) 2010-06-15
KR20070087647A (ko) 2007-08-28
WO2006065347A3 (en) 2007-02-01
TW200632060A (en) 2006-09-16
US20060124026A1 (en) 2006-06-15
JP2008523616A (ja) 2008-07-03
WO2006065347A2 (en) 2006-06-22
JP5198870B2 (ja) 2013-05-15
CN101076575A (zh) 2007-11-21
EP1833937A2 (en) 2007-09-19
CN101076575B (zh) 2014-11-26
DE602005021699D1 (de) 2010-07-15

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