ATE469952T1 - Polierlösungen - Google Patents

Polierlösungen

Info

Publication number
ATE469952T1
ATE469952T1 AT05818832T AT05818832T ATE469952T1 AT E469952 T1 ATE469952 T1 AT E469952T1 AT 05818832 T AT05818832 T AT 05818832T AT 05818832 T AT05818832 T AT 05818832T AT E469952 T1 ATE469952 T1 AT E469952T1
Authority
AT
Austria
Prior art keywords
carboxylic acid
polishing
acid
simple carboxylic
polishing solutions
Prior art date
Application number
AT05818832T
Other languages
English (en)
Inventor
Jeffrey S Kollodge
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE469952T1 publication Critical patent/ATE469952T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT05818832T 2004-12-10 2005-10-25 Polierlösungen ATE469952T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/009,608 US20060124026A1 (en) 2004-12-10 2004-12-10 Polishing solutions
PCT/US2005/038372 WO2006065347A2 (en) 2004-12-10 2005-10-25 Polishing solutions

Publications (1)

Publication Number Publication Date
ATE469952T1 true ATE469952T1 (de) 2010-06-15

Family

ID=36582316

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05818832T ATE469952T1 (de) 2004-12-10 2005-10-25 Polierlösungen

Country Status (9)

Country Link
US (1) US20060124026A1 (de)
EP (1) EP1833937B1 (de)
JP (1) JP5198870B2 (de)
KR (1) KR20070087647A (de)
CN (1) CN101076575B (de)
AT (1) ATE469952T1 (de)
DE (1) DE602005021699D1 (de)
TW (1) TWI473866B (de)
WO (1) WO2006065347A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7591956B2 (en) * 2006-05-03 2009-09-22 OMG Electronic Chemicals, Inc. Method and composition for selectively stripping nickel from a substrate
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
JP5135002B2 (ja) 2008-02-28 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
CN102834479B (zh) 2010-07-14 2015-02-18 日立化成株式会社 铜研磨用研磨液及使用了其的研磨方法
US9388330B2 (en) * 2012-12-17 2016-07-12 Fuji Engineering Co., Ltd. Bag containing blasting material
CN104745084B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种用于铝的化学机械抛光液及使用方法
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
JP6720791B2 (ja) * 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
US11999875B2 (en) * 2019-06-06 2024-06-04 Resonac Corporation Polishing solution and polishing method

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE663291A (de) * 1964-05-04
US3754878A (en) * 1971-01-04 1973-08-28 Colgate Palmolive Co Abrasive cleaning compositions
US3756957A (en) * 1971-03-15 1973-09-04 Furukawa Electric Co Ltd Solutions for chemical dissolution treatment of metallic materials
JPS5435125B2 (de) * 1972-01-28 1979-10-31
SE425007B (sv) * 1976-01-05 1982-08-23 Shipley Co Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US6410494B2 (en) * 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6435947B2 (en) * 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
JP3781677B2 (ja) * 1999-09-30 2006-05-31 昭和電工株式会社 研磨用組成物および研磨方法
JP3606806B2 (ja) * 2000-05-12 2005-01-05 花王株式会社 研磨液組成物
JP2002134443A (ja) * 2000-10-19 2002-05-10 Ebara Corp 研磨方法及び研磨工具
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
JP2003170349A (ja) * 2001-09-27 2003-06-17 Fujimi Inc 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法
JP3813865B2 (ja) * 2001-12-11 2006-08-23 株式会社荏原製作所 研磨方法及び研磨装置
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法

Also Published As

Publication number Publication date
JP5198870B2 (ja) 2013-05-15
US20060124026A1 (en) 2006-06-15
EP1833937B1 (de) 2010-06-02
JP2008523616A (ja) 2008-07-03
CN101076575A (zh) 2007-11-21
DE602005021699D1 (de) 2010-07-15
WO2006065347A3 (en) 2007-02-01
EP1833937A2 (de) 2007-09-19
KR20070087647A (ko) 2007-08-28
CN101076575B (zh) 2014-11-26
TWI473866B (zh) 2015-02-21
WO2006065347A2 (en) 2006-06-22
TW200632060A (en) 2006-09-16

Similar Documents

Publication Publication Date Title
ATE469952T1 (de) Polierlösungen
HUP0600110A2 (en) Removal of plasmin(ogen)from protein solutions
DE122008000046I1 (de) Beta-amino-tetrahydroimidazo(1,2-a)pyrazine und -tetrahydrotriazolo(4,3-a)pyrazine als dipeptidyl peptidase inhibitoren zur behandlung oder prevention von diabetes
DE602005023099D1 (de) Vorrichtung zur Herstellung von Metalloxidnanopulvern
HK1076541A1 (en) Electro-osmotic pumps and micro-channels
DE60233718D1 (de) Wasserbasierendes hydrophobiermittel zur behandlung von substraten
ITTO20021024A1 (it) Trattamento di superficie per componenti ferrosi.
DE502006007963D1 (de) Verwendung von hydrophobinen zur schmutzabweisenden behandlung von harten oberflächen
DE50309356D1 (de) tung von Werkstücken
DE60112066D1 (de) Verfahren zur redistribution von polycarbonat
DE60317735D1 (de) Authentifizierung eines elektronischen Etiketts
ATE321155T1 (de) Verfahren zur direkten elektrolytischen gewinnung von kupfer
DE602005016009D1 (de) 7-(2h-pyrazol-3-yl)-3,5-dihydroxy-heptansäure-derivate als hmg-co-a-reductase-inhibitoren zur behandlung von lipidemia
AU2002366796A8 (en) Methods using proton pump inhibitors
ATE345340T1 (de) N-substituierte-1h-indol-5-propansäure verbindungen als ppar-agonisten zur behandlung von diabetis
DE60332862D1 (de) 17beta-hydroxysteroid dehydrogenase typ-3 hemmer zur behandlung von androgen abhängigen erkrankungen
DE60204584D1 (de) Zusammensetzungen enthaltend eine niedrige konzentration an peroxide zur behandlung von vaginitis
DK1695956T3 (da) Cyklisk carboxylsyre-forbindelse og anvendelse deraf.
ATE429431T1 (de) 2-amino-benzoxazol-suphonamide als breitspektrum- hiv-protease-inhibitoren
DE602004004334D1 (de) Bearbeitungsverfahren zur Bearbeitung von gewölbten Oberflächen
DE60214355D1 (de) Exemestan zur behandlung von hormonabhängigen störungen
DE60209491D1 (de) Zweistufiger abschreckturm zum einsatz im verfahren zur umsetzung von sauerstoffverbindungen
TW200506099A (en) Method for regenerating etching solutions containing iron for the use in etching or pickling copper or copper alloys and an apparatus for carrying out said method
ZA200410156B (en) Broadspectrum substituted benzisoxazole sulfonamide hiv protease inhibitors
AU2002324734A1 (en) Borinic acid protease inhibitors

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties