JP2008517744A5 - - Google Patents
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- JP2008517744A5 JP2008517744A5 JP2007538142A JP2007538142A JP2008517744A5 JP 2008517744 A5 JP2008517744 A5 JP 2008517744A5 JP 2007538142 A JP2007538142 A JP 2007538142A JP 2007538142 A JP2007538142 A JP 2007538142A JP 2008517744 A5 JP2008517744 A5 JP 2008517744A5
- Authority
- JP
- Japan
- Prior art keywords
- fluid
- purification
- temperature
- canister
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012530 fluid Substances 0.000 claims 36
- 238000000746 purification Methods 0.000 claims 30
- 239000011159 matrix material Substances 0.000 claims 21
- 239000000463 material Substances 0.000 claims 16
- 239000002585 base Substances 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000002608 ionic liquid Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000001816 cooling Methods 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 229910021536 Zeolite Inorganic materials 0.000 claims 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052680 mordenite Inorganic materials 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 239000010457 zeolite Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical class N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical class Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical class [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical class P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 claims 2
- 238000005260 corrosion Methods 0.000 claims 2
- 230000007797 corrosion Effects 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000010935 stainless steel Substances 0.000 claims 2
- 229910001220 stainless steel Inorganic materials 0.000 claims 2
- GGMAUXPWPYFQRB-UHFFFAOYSA-N 1,1,2,2,3,3,4,4-octafluorocyclopentane Chemical class FC1(F)CC(F)(F)C(F)(F)C1(F)F GGMAUXPWPYFQRB-UHFFFAOYSA-N 0.000 claims 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical class CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 1
- 229910015900 BF3 Inorganic materials 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical class Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- 229910018503 SF6 Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 1
- 150000001342 alkaline earth metals Chemical class 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical class [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910000078 germane Inorganic materials 0.000 claims 1
- 150000008282 halocarbons Chemical class 0.000 claims 1
- 239000001307 helium Chemical class 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical class [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 239000001257 hydrogen Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Chemical class Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000002923 metal particle Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical class [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical class C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 1
- 239000001272 nitrous oxide Chemical class 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 239000001301 oxygen Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 claims 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims 1
- 229910000058 selane Inorganic materials 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000005049 silicon tetrachloride Substances 0.000 claims 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims 1
- 239000005052 trichlorosilane Substances 0.000 claims 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62187104P | 2004-10-25 | 2004-10-25 | |
| US11/252,200 US7314506B2 (en) | 2004-10-25 | 2005-10-17 | Fluid purification system with low temperature purifier |
| PCT/US2005/038222 WO2006057748A2 (en) | 2004-10-25 | 2005-10-19 | Fluid purification system with low temperature purifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008517744A JP2008517744A (ja) | 2008-05-29 |
| JP2008517744A5 true JP2008517744A5 (enExample) | 2008-11-27 |
Family
ID=36205001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007538142A Pending JP2008517744A (ja) | 2004-10-25 | 2005-10-19 | 低温浄化器を伴う流体浄化システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7314506B2 (enExample) |
| EP (1) | EP1817095A4 (enExample) |
| JP (1) | JP2008517744A (enExample) |
| KR (2) | KR101369934B1 (enExample) |
| TW (1) | TWI411462B (enExample) |
| WO (1) | WO2006057748A2 (enExample) |
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| DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
| JP4843274B2 (ja) * | 2004-08-25 | 2011-12-21 | 東京エレクトロン株式会社 | プラズマ成膜方法 |
| US20060211248A1 (en) * | 2005-02-25 | 2006-09-21 | Brabant Paul D | Purifier for chemical reactor |
| US7638058B2 (en) | 2005-04-07 | 2009-12-29 | Matheson Tri-Gas | Fluid storage and purification method and system |
| US8664124B2 (en) | 2005-10-31 | 2014-03-04 | Novellus Systems, Inc. | Method for etching organic hardmasks |
| US8110493B1 (en) | 2005-12-23 | 2012-02-07 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
| US7628845B2 (en) * | 2006-03-10 | 2009-12-08 | Macronix International Co., Ltd. | Filtering device and filtering method thereof and semiconductor fabricating method |
| US7736420B2 (en) * | 2006-05-19 | 2010-06-15 | Air Products And Chemicals, Inc. | Contact methods for formation of Lewis gas/liquid systems and recovery of Lewis gas therefrom |
| US7981810B1 (en) | 2006-06-08 | 2011-07-19 | Novellus Systems, Inc. | Methods of depositing highly selective transparent ashable hardmask films |
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| US7981777B1 (en) | 2007-02-22 | 2011-07-19 | Novellus Systems, Inc. | Methods of depositing stable and hermetic ashable hardmask films |
| US7915166B1 (en) | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
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| US20090060819A1 (en) * | 2007-08-29 | 2009-03-05 | Bill Jr Jon M | Process for producing trichlorosilane |
| DE112008002299T5 (de) * | 2007-08-29 | 2010-07-22 | Dynamic Engineering, Inc., Sturgis | Verfahren zur Herstellung von Trichlorsilan |
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| US20090068086A1 (en) * | 2007-09-07 | 2009-03-12 | Richard Allen Hogle | Method and apparatus for the production of high purity tungsten hexafluoride |
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| US20090291872A1 (en) * | 2008-05-21 | 2009-11-26 | The Regents Of The University Of Colorado | Ionic Liquids and Methods For Using the Same |
| US7820556B2 (en) * | 2008-06-04 | 2010-10-26 | Novellus Systems, Inc. | Method for purifying acetylene gas for use in semiconductor processes |
| US8435608B1 (en) * | 2008-06-27 | 2013-05-07 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
| US8129577B2 (en) | 2008-09-16 | 2012-03-06 | Air Products And Chemicals, Inc. | Process and system for providing acetylene |
| WO2010065880A2 (en) * | 2008-12-05 | 2010-06-10 | Matheson Tri-Gas, Inc. | Acetylene process gas purification methods and systems |
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| US8563414B1 (en) | 2010-04-23 | 2013-10-22 | Novellus Systems, Inc. | Methods for forming conductive carbon films by PECVD |
| DE102010061144A1 (de) * | 2010-12-09 | 2012-06-14 | Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh | Kühlfalle |
| ITMI20120676A1 (it) * | 2012-04-24 | 2013-10-25 | Getters Spa | Metodo e dispositivo rigenerabile di purificazione a temperatura ambiente per monossido di diazoto |
| SG195494A1 (en) | 2012-05-18 | 2013-12-30 | Novellus Systems Inc | Carbon deposition-etch-ash gap fill process |
| US10279959B2 (en) | 2012-12-11 | 2019-05-07 | Versum Materials Us, Llc | Alkoxysilylamine compounds and applications thereof |
| US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
| US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
| US9320387B2 (en) | 2013-09-30 | 2016-04-26 | Lam Research Corporation | Sulfur doped carbon hard masks |
| US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
| JP6475943B2 (ja) * | 2014-09-26 | 2019-02-27 | 大旺新洋株式会社 | ガスの分離方法 |
| CN104436992B (zh) * | 2014-10-15 | 2016-08-17 | 北京氢璞创能科技有限公司 | 具有前置气体成份分离装置的变压吸附气体提纯器组件 |
| JP6680611B2 (ja) * | 2016-04-28 | 2020-04-15 | 大旺新洋株式会社 | ガスの分離方法 |
| US11027974B2 (en) | 2016-11-08 | 2021-06-08 | Matheson Tri-Gas, Inc. | Removal of moisture from hydrazine |
| WO2020242863A1 (en) * | 2019-05-24 | 2020-12-03 | Entegris, Inc. | Methods and systems for adsorbing organometallic vapor |
| WO2020243342A1 (en) | 2019-05-29 | 2020-12-03 | Lam Research Corporation | High selectivity, low stress, and low hydrogen diamond-like carbon hardmasks by high power pulsed low frequency rf |
| KR102888630B1 (ko) | 2019-08-30 | 2025-11-19 | 램 리써치 코포레이션 | 저압에서의 고밀도, 고모듈러스, 및 고경도 비정질 탄소 막들 |
| KR102302551B1 (ko) * | 2019-11-21 | 2021-09-15 | 이시동 | 불산의 정제 방법 |
| KR102845376B1 (ko) * | 2022-03-08 | 2025-08-12 | 크라이오에이치앤아이(주) | 배기 가스 처리 장치 |
| CN114570186B (zh) * | 2022-03-18 | 2023-05-12 | 南京曙光精细化工有限公司 | 一种含硫硅烷偶联剂生产尾气的环保处理方法 |
| KR20240169462A (ko) | 2023-05-24 | 2024-12-03 | 한국핵융합에너지연구원 | 극저온 배관 불순물 포집장치 |
| CN120242666B (zh) * | 2025-06-04 | 2025-08-05 | 福建德尔科技股份有限公司 | 一种三氟化磷纯化设备 |
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| US6579343B2 (en) * | 2001-03-30 | 2003-06-17 | University Of Notre Dame Du Lac | Purification of gas with liquid ionic compounds |
| US6630012B2 (en) * | 2001-04-30 | 2003-10-07 | Battelle Memorial Institute | Method for thermal swing adsorption and thermally-enhanced pressure swing adsorption |
| US6733734B2 (en) * | 2001-10-31 | 2004-05-11 | Matheson Tri-Gas | Materials and methods for the purification of hydride gases |
| US7172646B2 (en) * | 2003-04-15 | 2007-02-06 | Air Products And Chemicals, Inc. | Reactive liquid based gas storage and delivery systems |
-
2005
- 2005-10-17 US US11/252,200 patent/US7314506B2/en not_active Expired - Lifetime
- 2005-10-19 KR KR1020077011833A patent/KR101369934B1/ko not_active Expired - Fee Related
- 2005-10-19 JP JP2007538142A patent/JP2008517744A/ja active Pending
- 2005-10-19 EP EP05851241A patent/EP1817095A4/en not_active Withdrawn
- 2005-10-19 KR KR1020137008376A patent/KR101369935B1/ko not_active Expired - Fee Related
- 2005-10-19 WO PCT/US2005/038222 patent/WO2006057748A2/en not_active Ceased
- 2005-10-24 TW TW094137123A patent/TWI411462B/zh active
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