JP2008501240A5 - - Google Patents

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Publication number
JP2008501240A5
JP2008501240A5 JP2007515185A JP2007515185A JP2008501240A5 JP 2008501240 A5 JP2008501240 A5 JP 2008501240A5 JP 2007515185 A JP2007515185 A JP 2007515185A JP 2007515185 A JP2007515185 A JP 2007515185A JP 2008501240 A5 JP2008501240 A5 JP 2008501240A5
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JP
Japan
Prior art keywords
poly
acid
polishing composition
alcohol
water
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Pending
Application number
JP2007515185A
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English (en)
Japanese (ja)
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JP2008501240A (ja
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Publication date
Priority claimed from US10/857,432 external-priority patent/US20050263407A1/en
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Publication of JP2008501240A publication Critical patent/JP2008501240A/ja
Publication of JP2008501240A5 publication Critical patent/JP2008501240A5/ja
Pending legal-status Critical Current

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JP2007515185A 2004-05-28 2005-05-19 電気化学−機械研磨組成物及び同組成物の使用方法 Pending JP2008501240A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/857,432 US20050263407A1 (en) 2004-05-28 2004-05-28 Electrochemical-mechanical polishing composition and method for using the same
PCT/US2005/017579 WO2005118736A1 (en) 2004-05-28 2005-05-19 Electrochemical-mechanical polishing composition and method for using the same

Publications (2)

Publication Number Publication Date
JP2008501240A JP2008501240A (ja) 2008-01-17
JP2008501240A5 true JP2008501240A5 (https=) 2008-07-03

Family

ID=34973029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515185A Pending JP2008501240A (ja) 2004-05-28 2005-05-19 電気化学−機械研磨組成物及び同組成物の使用方法

Country Status (6)

Country Link
US (1) US20050263407A1 (https=)
JP (1) JP2008501240A (https=)
CN (1) CN1961055B (https=)
IL (1) IL179192A0 (https=)
TW (1) TWI316083B (https=)
WO (1) WO2005118736A1 (https=)

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US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060137995A1 (en) * 2004-12-29 2006-06-29 Sukanta Ghosh Method for removal of metal from a workpiece
US20060163083A1 (en) * 2005-01-21 2006-07-27 International Business Machines Corporation Method and composition for electro-chemical-mechanical polishing
KR101332302B1 (ko) * 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
US7879255B2 (en) * 2005-11-04 2011-02-01 Applied Materials, Inc. Method and composition for electrochemically polishing a conductive material on a substrate
JP4954558B2 (ja) * 2006-01-31 2012-06-20 富士フイルム株式会社 金属用研磨液、及びそれを用いた化学的機械的研磨方法
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US8137580B2 (en) * 2006-12-29 2012-03-20 Lg Chem, Ltd. CMP slurry composition for forming metal wiring line
JP5616273B2 (ja) 2011-03-31 2014-10-29 富士フイルム株式会社 有機半導体ポリマー、有機半導体材料用組成物および光電池
TW201305291A (zh) * 2011-07-28 2013-02-01 Anji Microelectronics Co Ltd 化學機械拋光液
CN102337580A (zh) * 2011-09-21 2012-02-01 合肥金盟工贸有限公司 一种用于电化学抛光镁合金的离子液体抛光液及其制备方法
KR20140000496A (ko) * 2012-06-22 2014-01-03 에스케이하이닉스 주식회사 연마 조성물, 이의 제조 방법 및 이를 이용한 화학적 기계적 연마 방법
CN102977153B (zh) * 2012-11-21 2016-04-20 宁波大学 L-酒石酸2,2-二吡啶胺钴铁电功能材料及制备方法
CN103012495B (zh) * 2012-11-21 2016-04-20 宁波大学 D-酒石酸2,2-二吡啶胺钴铁电功能材料及制备方法
US9732430B2 (en) * 2013-10-24 2017-08-15 Baker Hughes Incorporated Chemical inhibition of pitting corrosion in methanolic solutions containing an organic halide
TWI583756B (zh) * 2016-01-12 2017-05-21 常州時創能源科技有限公司 結晶矽酸性拋光液的添加劑及其應用
EP3584298B1 (en) * 2017-02-17 2022-12-28 Fujimi Incorporated Polishing method using a polishing composition
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
JP7035773B2 (ja) * 2018-04-27 2022-03-15 三菱ケミカル株式会社 研磨組成物
CN110172031B (zh) * 2019-05-23 2021-03-16 北京师范大学 一种阴离子型n-取代苯胺离子液体及其制备方法
TWI769619B (zh) * 2020-01-07 2022-07-01 美商Cmc材料股份有限公司 經衍生的聚胺基酸
KR102608626B1 (ko) * 2020-11-30 2023-12-04 한국과학기술연구원 Cis계 박막의 평탄화 방법, 이를 이용하여 제조된 cis계 박막 및 상기 cis계 박막을 포함하는 태양전지
CN115287739B (zh) * 2022-08-11 2025-07-29 临沂市兴冠精细化工有限公司 一种金属表面清洗剂的制备方法

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US6299741B1 (en) * 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6592742B2 (en) * 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
JP3813865B2 (ja) * 2001-12-11 2006-08-23 株式会社荏原製作所 研磨方法及び研磨装置
CN1646649A (zh) * 2002-02-26 2005-07-27 应用材料股份有限公司 研磨基材的方法及组合物
JP2003311540A (ja) * 2002-04-30 2003-11-05 Sony Corp 電解研磨液、電解研磨方法及び半導体装置の製造方法
US20030224184A1 (en) * 2002-05-07 2003-12-04 Hermes Ann Robertson Method of producing wear resistant traffic markings

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