JP2008501234A - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
JP2008501234A
JP2008501234A JP2007514282A JP2007514282A JP2008501234A JP 2008501234 A JP2008501234 A JP 2008501234A JP 2007514282 A JP2007514282 A JP 2007514282A JP 2007514282 A JP2007514282 A JP 2007514282A JP 2008501234 A JP2008501234 A JP 2008501234A
Authority
JP
Japan
Prior art keywords
light emitting
substrate
emitting diode
electrode
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007514282A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008501234A5 (enExample
Inventor
ロナルド エム ウォルフ
ブルッヘン ミヘル ピー ビー ファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2008501234A publication Critical patent/JP2008501234A/ja
Publication of JP2008501234A5 publication Critical patent/JP2008501234A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
JP2007514282A 2004-06-01 2005-05-25 発光ダイオード Pending JP2008501234A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04102423 2004-06-01
PCT/IB2005/051708 WO2005119798A2 (en) 2004-06-01 2005-05-25 Light- emitting diode

Publications (2)

Publication Number Publication Date
JP2008501234A true JP2008501234A (ja) 2008-01-17
JP2008501234A5 JP2008501234A5 (enExample) 2008-07-10

Family

ID=35311905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007514282A Pending JP2008501234A (ja) 2004-06-01 2005-05-25 発光ダイオード

Country Status (7)

Country Link
US (1) US20080251809A1 (enExample)
EP (1) EP1756878A2 (enExample)
JP (1) JP2008501234A (enExample)
KR (1) KR20070036118A (enExample)
CN (1) CN100454598C (enExample)
TW (1) TW200612581A (enExample)
WO (1) WO2005119798A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
KR101809472B1 (ko) 2009-01-14 2018-01-18 삼성전자주식회사 광추출 효율이 향상된 발광 장치
WO2011037876A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device having heat dissipation element
JP5189211B2 (ja) 2010-07-20 2013-04-24 パナソニック株式会社 電球形ランプ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172199A (ja) * 1995-12-20 1997-06-30 Mitsubishi Cable Ind Ltd 窒化ガリウム系化合物半導体素子
JP2001322866A (ja) * 1999-05-19 2001-11-20 Ngk Spark Plug Co Ltd アルミナ焼結体及びその製造方法並びに焼結アルミナ部材及び発光管
JP2002280608A (ja) * 2001-03-09 2002-09-27 Lumileds Lighting Us Llc 半導体発光デバイスおよびその作製方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211758A (en) * 1978-12-26 1980-07-08 Gte Laboratories Incorporated Ceramic compositions and articles prepared therefrom
US6288417B1 (en) * 1999-01-07 2001-09-11 Xerox Corporation Light-emitting devices including polycrystalline gan layers and method of forming devices
CA2308933C (en) * 1999-05-19 2008-07-22 Ngk Spark Plug Co., Ltd. Translucent polycrystalline ceramic and method for making same
US20020084748A1 (en) * 2000-12-28 2002-07-04 Ayala Raul E. UV Reflecting materials for LED lamps using UV-emitting diodes
US6919585B2 (en) * 2002-05-17 2005-07-19 Lumei Optoelectronics, Inc. Light-emitting diode with silicon carbide substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09172199A (ja) * 1995-12-20 1997-06-30 Mitsubishi Cable Ind Ltd 窒化ガリウム系化合物半導体素子
JP2001322866A (ja) * 1999-05-19 2001-11-20 Ngk Spark Plug Co Ltd アルミナ焼結体及びその製造方法並びに焼結アルミナ部材及び発光管
JP2002280608A (ja) * 2001-03-09 2002-09-27 Lumileds Lighting Us Llc 半導体発光デバイスおよびその作製方法

Also Published As

Publication number Publication date
US20080251809A1 (en) 2008-10-16
WO2005119798A3 (en) 2006-03-16
KR20070036118A (ko) 2007-04-02
CN100454598C (zh) 2009-01-21
WO2005119798A2 (en) 2005-12-15
CN1961433A (zh) 2007-05-09
EP1756878A2 (en) 2007-02-28
TW200612581A (en) 2006-04-16

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