JP2008501234A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008501234A5 JP2008501234A5 JP2007514282A JP2007514282A JP2008501234A5 JP 2008501234 A5 JP2008501234 A5 JP 2008501234A5 JP 2007514282 A JP2007514282 A JP 2007514282A JP 2007514282 A JP2007514282 A JP 2007514282A JP 2008501234 A5 JP2008501234 A5 JP 2008501234A5
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- substrate
- light emitting
- light
- diode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04102423 | 2004-06-01 | ||
| PCT/IB2005/051708 WO2005119798A2 (en) | 2004-06-01 | 2005-05-25 | Light- emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008501234A JP2008501234A (ja) | 2008-01-17 |
| JP2008501234A5 true JP2008501234A5 (enExample) | 2008-07-10 |
Family
ID=35311905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007514282A Pending JP2008501234A (ja) | 2004-06-01 | 2005-05-25 | 発光ダイオード |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080251809A1 (enExample) |
| EP (1) | EP1756878A2 (enExample) |
| JP (1) | JP2008501234A (enExample) |
| KR (1) | KR20070036118A (enExample) |
| CN (1) | CN100454598C (enExample) |
| TW (1) | TW200612581A (enExample) |
| WO (1) | WO2005119798A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
| KR101809472B1 (ko) | 2009-01-14 | 2018-01-18 | 삼성전자주식회사 | 광추출 효율이 향상된 발광 장치 |
| WO2011037876A1 (en) | 2009-09-25 | 2011-03-31 | Cree, Inc. | Lighting device having heat dissipation element |
| JP5189211B2 (ja) | 2010-07-20 | 2013-04-24 | パナソニック株式会社 | 電球形ランプ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211758A (en) * | 1978-12-26 | 1980-07-08 | Gte Laboratories Incorporated | Ceramic compositions and articles prepared therefrom |
| JPH09172199A (ja) * | 1995-12-20 | 1997-06-30 | Mitsubishi Cable Ind Ltd | 窒化ガリウム系化合物半導体素子 |
| US6288417B1 (en) * | 1999-01-07 | 2001-09-11 | Xerox Corporation | Light-emitting devices including polycrystalline gan layers and method of forming devices |
| JP4723055B2 (ja) * | 1999-05-19 | 2011-07-13 | 日本特殊陶業株式会社 | アルミナ焼結体及びその製造方法並びに焼結アルミナ部材及び発光管 |
| CA2308933C (en) * | 1999-05-19 | 2008-07-22 | Ngk Spark Plug Co., Ltd. | Translucent polycrystalline ceramic and method for making same |
| US6646292B2 (en) * | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
| US20020084748A1 (en) * | 2000-12-28 | 2002-07-04 | Ayala Raul E. | UV Reflecting materials for LED lamps using UV-emitting diodes |
| US6919585B2 (en) * | 2002-05-17 | 2005-07-19 | Lumei Optoelectronics, Inc. | Light-emitting diode with silicon carbide substrate |
-
2005
- 2005-05-25 CN CNB2005800180234A patent/CN100454598C/zh not_active Expired - Fee Related
- 2005-05-25 EP EP05741048A patent/EP1756878A2/en not_active Withdrawn
- 2005-05-25 JP JP2007514282A patent/JP2008501234A/ja active Pending
- 2005-05-25 WO PCT/IB2005/051708 patent/WO2005119798A2/en not_active Ceased
- 2005-05-25 KR KR1020077000048A patent/KR20070036118A/ko not_active Withdrawn
- 2005-05-25 US US11/569,702 patent/US20080251809A1/en not_active Abandoned
- 2005-05-27 TW TW094117502A patent/TW200612581A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2005094271A3 (en) | Colloidal quantum dot light emitting diodes | |
| EP1536487A4 (en) | ELECTROLUMINESCENT ELEMENT, LIGHT EMITTING DEVICE AND SURFACE EMISSION LIGHTING DEVICE USING THE SAME | |
| WO2006036565A3 (en) | High efficiency group iii nitride led with lenticular surface | |
| EP1976031A3 (en) | Light emitting diode having well and/or barrier layers with superlattice structure | |
| WO2004075307A3 (en) | Group iii nitride contact structures for light emitting devices | |
| WO2008153130A1 (ja) | 窒化物半導体発光素子及び窒化物半導体の製造方法 | |
| EP2045889A3 (en) | Nitride semiconductor light-emitting device | |
| WO2008021988A3 (en) | Gan based led with improved light extraction efficiency and method for making the same | |
| EP2242117A3 (en) | Group III nitride based quantum well light emitting device structures | |
| WO2005020337A8 (ja) | 発光装置 | |
| TW200742126A (en) | Semiconductor light emitting device and its manufacturing method | |
| DE60330683D1 (de) | Leuchtdiode mit siliziumcarbidsubstrat | |
| JP2007281257A5 (enExample) | ||
| EP1990841A3 (en) | Superlattice strain relief layer for semiconductor devices | |
| JP2008277447A5 (enExample) | ||
| EP1670074A3 (en) | Light emitting diode headlamp | |
| TW200601592A (en) | High reflectivity p-contact for InGaN LEDs | |
| EP1396892A3 (en) | High-efficiency light emitting diode | |
| EP1734590A3 (en) | Light-Emitting device | |
| JP2008501234A5 (enExample) | ||
| JP2007234918A5 (enExample) | ||
| JP2007095786A5 (enExample) | ||
| WO2008130821A3 (en) | Transparent ohmic contacts on light emitting diodes with growth substrates | |
| WO2005119798A3 (en) | Light- emitting diode | |
| TW200725948A (en) | Gallium nitride-based compound semiconductor light-emitting device and production method thereof |