KR20070036118A - 발광 다이오드 및 그 제조 방법 - Google Patents

발광 다이오드 및 그 제조 방법 Download PDF

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Publication number
KR20070036118A
KR20070036118A KR1020077000048A KR20077000048A KR20070036118A KR 20070036118 A KR20070036118 A KR 20070036118A KR 1020077000048 A KR1020077000048 A KR 1020077000048A KR 20077000048 A KR20077000048 A KR 20077000048A KR 20070036118 A KR20070036118 A KR 20070036118A
Authority
KR
South Korea
Prior art keywords
light emitting
substrate
polycrystalline
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077000048A
Other languages
English (en)
Korean (ko)
Inventor
로날트 엠. 볼프
미첼 피. 비. 반 브룩겐
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20070036118A publication Critical patent/KR20070036118A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
KR1020077000048A 2004-06-01 2005-05-25 발광 다이오드 및 그 제조 방법 Withdrawn KR20070036118A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04102423 2004-06-01
EP04102423.3 2004-06-01

Publications (1)

Publication Number Publication Date
KR20070036118A true KR20070036118A (ko) 2007-04-02

Family

ID=35311905

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077000048A Withdrawn KR20070036118A (ko) 2004-06-01 2005-05-25 발광 다이오드 및 그 제조 방법

Country Status (7)

Country Link
US (1) US20080251809A1 (enExample)
EP (1) EP1756878A2 (enExample)
JP (1) JP2008501234A (enExample)
KR (1) KR20070036118A (enExample)
CN (1) CN100454598C (enExample)
TW (1) TW200612581A (enExample)
WO (1) WO2005119798A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8319238B2 (en) 2009-01-14 2012-11-27 Samsung Electronics Co., Ltd. Light emitting device with improved light extraction efficiency

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
WO2011037876A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device having heat dissipation element
JP5189211B2 (ja) 2010-07-20 2013-04-24 パナソニック株式会社 電球形ランプ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211758A (en) * 1978-12-26 1980-07-08 Gte Laboratories Incorporated Ceramic compositions and articles prepared therefrom
JPH09172199A (ja) * 1995-12-20 1997-06-30 Mitsubishi Cable Ind Ltd 窒化ガリウム系化合物半導体素子
US6288417B1 (en) * 1999-01-07 2001-09-11 Xerox Corporation Light-emitting devices including polycrystalline gan layers and method of forming devices
JP4723055B2 (ja) * 1999-05-19 2011-07-13 日本特殊陶業株式会社 アルミナ焼結体及びその製造方法並びに焼結アルミナ部材及び発光管
CA2308933C (en) * 1999-05-19 2008-07-22 Ngk Spark Plug Co., Ltd. Translucent polycrystalline ceramic and method for making same
US6646292B2 (en) * 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
US20020084748A1 (en) * 2000-12-28 2002-07-04 Ayala Raul E. UV Reflecting materials for LED lamps using UV-emitting diodes
US6919585B2 (en) * 2002-05-17 2005-07-19 Lumei Optoelectronics, Inc. Light-emitting diode with silicon carbide substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8319238B2 (en) 2009-01-14 2012-11-27 Samsung Electronics Co., Ltd. Light emitting device with improved light extraction efficiency

Also Published As

Publication number Publication date
US20080251809A1 (en) 2008-10-16
WO2005119798A3 (en) 2006-03-16
CN100454598C (zh) 2009-01-21
JP2008501234A (ja) 2008-01-17
WO2005119798A2 (en) 2005-12-15
CN1961433A (zh) 2007-05-09
EP1756878A2 (en) 2007-02-28
TW200612581A (en) 2006-04-16

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20070102

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid