JP2008311169A - 有機elディスプレイ及びその製造方法 - Google Patents
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- 239000011521 glass Substances 0.000 description 11
- 238000007774 anilox coating Methods 0.000 description 8
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- 239000001301 oxygen Substances 0.000 description 6
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- 238000000605 extraction Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
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- 230000000694 effects Effects 0.000 description 3
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
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- 238000009832 plasma treatment Methods 0.000 description 3
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- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 239000011248 coating agent Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
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- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001756 Polyvinyl chloride acetate Polymers 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- RQGPLDBZHMVWCH-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole Chemical class C1=NC2=CC=NC2=C1 RQGPLDBZHMVWCH-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】透光性基板と、透光性基板上に形成された複数の画素電極と、複数の画素電極を区画する100nm以上の厚さを有する複数の絶縁性媒体層と、複数の画素電極上に形成された複数の正孔輸送層と、複数の正孔輸送層上に形成された複数の有機発光層と、複数の有機発光層上に形成された対向電極と、を備え、絶縁性媒体層の側面と正孔輸送層又は有機発光層との接触角が30°以下である特徴とする有機ELディスプレイ。
【選択図】図1
Description
本発明の実施例1について述べる。対角1.8インチサイズのガラス基板4の上にスパッタリング法を用いてITO(インジウムスズ複合酸化物)薄膜を形成し、フォトリソグラフィ法と酸溶液によるエッチングでITO膜をパターニングして、画素電極3を形成した。画素電極3のラインパターンは、線幅136μm、スペース30μmでラインが約32mm角の中に192ライン形成されるパターンとした。
本発明の実施例2について述べる。対角1.8インチサイズのガラス基板4の上にスパッタリング法を用いてITO(インジウムスズ複合酸化物)薄膜を形成し、フォトリソグラフィ法と酸溶液によるエッチングとでITO膜をパターニングして、画素電極3を形成した。画素電極3のラインパターンは、線幅136μm、スペース30μmでラインが約32mm角の中に192ライン形成されるパターンとした。
2…正孔輸送層
3…画素電極
4…透光性基板
5…絶縁性媒体層
6…対向電極
7…ガラスキャップ
8…接着剤
10…インクタンク
11…インキチャンバー
12…アニロックスロール
12a…インキ層
13…版
14…版胴
15…被印刷基板
16…平台
100…有機EL素子
Claims (7)
- 透光性基板と、
前記透光性基板上に形成された複数の画素電極と、
前記複数の画素電極を区画する100nm以上の厚さを有する複数の絶縁性媒体層と、
前記複数の画素電極上に形成された複数の正孔輸送層と、
前記複数の正孔輸送層上に形成された複数の有機発光層と、
前記複数の有機発光層上に形成された対向電極と、を備え、
前記絶縁性媒体層の側面と前記正孔輸送層又は前記有機発光層との接触角が30°以下であることを特徴とする有機ELディスプレイ。 - 前記絶縁性媒体層は無機窒化膜、無機酸化膜、無機フッ化物のいずれかであることを特徴とする請求項1に記載の有機ELディスプレイ。
- 前記画素電極表面から前記有機発光層の表面までの距離が、前記画素電極表面の中央から前記絶縁性媒体層に向かうにつれて増加していることを特徴とする請求項1又は2に記載の有機ELディスプレイ。
- 前記絶縁性媒体層の側面は傾斜していることを特徴とする請求項1乃至3に記載の有機ELディスプレイ。
- 画素電極と、対向電極と、正孔輸送層と、有機発光層と、を含む有機発光媒体層を有する有機ELディスプレイの製造方法において、
透光性基板上に複数の画素電極を形成し、
前記画素電極を区画するために前記複数の画素電極表面よりも100nm以上厚く複数の絶縁性媒体層を形成し、
薄膜材料液を用いた湿式成膜法により前記正孔輸送層又は前記有機発光層を前記複数の画素電極上に形成し、
前記絶縁性媒体層の側面と前記薄膜材料液との接触角が30°以下となるようにしたこと特徴とする有機ELディスプレイの製造方法。 - 前記有機発光層は凸版印刷法を用いて形成されたことを特徴とする請求項5に記載の有機ELディスプレイの製造方法。
- 前記絶縁性媒体層は無機窒化膜、無機酸化膜、無機フッ化物のいずれかであることを特徴とする請求項5又は6に記載の有機ELディスプレイの製造方法。
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JP2007159859A JP2008311169A (ja) | 2007-06-18 | 2007-06-18 | 有機elディスプレイ及びその製造方法 |
US12/139,395 US20080311426A1 (en) | 2007-06-18 | 2008-06-13 | Organic EL Display and Method for Manufacturing the Same |
Applications Claiming Priority (1)
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JP2007159859A JP2008311169A (ja) | 2007-06-18 | 2007-06-18 | 有機elディスプレイ及びその製造方法 |
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JP2008311169A true JP2008311169A (ja) | 2008-12-25 |
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JP2007159859A Pending JP2008311169A (ja) | 2007-06-18 | 2007-06-18 | 有機elディスプレイ及びその製造方法 |
Country Status (2)
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US (1) | US20080311426A1 (ja) |
JP (1) | JP2008311169A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010092931A1 (ja) * | 2009-02-16 | 2010-08-19 | 凸版印刷株式会社 | 有機エレクトロルミネッセンスディスプレイ及びその製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11329741A (ja) * | 1998-05-15 | 1999-11-30 | Seiko Epson Corp | 機能性薄膜デバイス |
JP2000353594A (ja) * | 1998-03-17 | 2000-12-19 | Seiko Epson Corp | 薄膜パターニング用基板 |
JP2003272840A (ja) * | 2002-03-14 | 2003-09-26 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置の製造装置、電気光学装置、並びに電子機器 |
JP2003332080A (ja) * | 2002-05-07 | 2003-11-21 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子およびその製造方法 |
JP2006286243A (ja) * | 2005-03-31 | 2006-10-19 | Toppan Printing Co Ltd | 有機el素子とその製造方法 |
JP2007095415A (ja) * | 2005-09-28 | 2007-04-12 | Toppan Printing Co Ltd | 有機エレクトロルミネセンス素子の製造方法及び有機エレクトロルミネセンス素子 |
JP2007115465A (ja) * | 2005-10-19 | 2007-05-10 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンス素子 |
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US6717356B1 (en) * | 1997-09-18 | 2004-04-06 | Lg Electronics Inc. | Organic electroluminescent device with trapezoidal walls |
JP3428397B2 (ja) * | 1997-10-14 | 2003-07-22 | 松下電器産業株式会社 | 有機エレクトロルミネセンス素子及びその製造方法 |
KR100711161B1 (ko) * | 2002-09-12 | 2007-04-24 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 유기 el 디스플레이 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2000353594A (ja) * | 1998-03-17 | 2000-12-19 | Seiko Epson Corp | 薄膜パターニング用基板 |
JPH11329741A (ja) * | 1998-05-15 | 1999-11-30 | Seiko Epson Corp | 機能性薄膜デバイス |
JP2003272840A (ja) * | 2002-03-14 | 2003-09-26 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置の製造装置、電気光学装置、並びに電子機器 |
JP2003332080A (ja) * | 2002-05-07 | 2003-11-21 | Dainippon Printing Co Ltd | エレクトロルミネッセント素子およびその製造方法 |
JP2006286243A (ja) * | 2005-03-31 | 2006-10-19 | Toppan Printing Co Ltd | 有機el素子とその製造方法 |
JP2007095415A (ja) * | 2005-09-28 | 2007-04-12 | Toppan Printing Co Ltd | 有機エレクトロルミネセンス素子の製造方法及び有機エレクトロルミネセンス素子 |
JP2007115465A (ja) * | 2005-10-19 | 2007-05-10 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンス素子 |
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