JP2008293594A5 - - Google Patents

Download PDF

Info

Publication number
JP2008293594A5
JP2008293594A5 JP2007138214A JP2007138214A JP2008293594A5 JP 2008293594 A5 JP2008293594 A5 JP 2008293594A5 JP 2007138214 A JP2007138214 A JP 2007138214A JP 2007138214 A JP2007138214 A JP 2007138214A JP 2008293594 A5 JP2008293594 A5 JP 2008293594A5
Authority
JP
Japan
Prior art keywords
memory cell
power supply
write
bit line
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007138214A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008293594A (ja
JP5288391B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007138214A priority Critical patent/JP5288391B2/ja
Priority claimed from JP2007138214A external-priority patent/JP5288391B2/ja
Priority to US12/153,308 priority patent/US7826298B2/en
Publication of JP2008293594A publication Critical patent/JP2008293594A/ja
Publication of JP2008293594A5 publication Critical patent/JP2008293594A5/ja
Application granted granted Critical
Publication of JP5288391B2 publication Critical patent/JP5288391B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007138214A 2007-05-24 2007-05-24 半導体記憶装置 Active JP5288391B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007138214A JP5288391B2 (ja) 2007-05-24 2007-05-24 半導体記憶装置
US12/153,308 US7826298B2 (en) 2007-05-24 2008-05-16 Semiconductor memory device with low standby current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007138214A JP5288391B2 (ja) 2007-05-24 2007-05-24 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2008293594A JP2008293594A (ja) 2008-12-04
JP2008293594A5 true JP2008293594A5 (enExample) 2010-04-02
JP5288391B2 JP5288391B2 (ja) 2013-09-11

Family

ID=40072257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007138214A Active JP5288391B2 (ja) 2007-05-24 2007-05-24 半導体記憶装置

Country Status (2)

Country Link
US (1) US7826298B2 (enExample)
JP (1) JP5288391B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353393B2 (ja) * 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
US8259486B2 (en) * 2009-08-03 2012-09-04 Stmicroelectronics International N.V. Self-timed write boost for SRAM cell with self mode control
JP5190542B2 (ja) * 2009-09-02 2013-04-24 パナソニック株式会社 半導体記憶装置
CN102023938B (zh) * 2009-09-18 2013-04-24 鸿富锦精密工业（深圳）有限公司 电子装置及断电保护方法
US8570823B2 (en) * 2010-02-18 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier with low sensing margin and high device variation tolerance
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013232257A (ja) * 2012-04-27 2013-11-14 Renesas Electronics Corp マルチポートメモリを備える半導体装置
JP6371172B2 (ja) 2014-09-09 2018-08-08 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP6383637B2 (ja) 2014-10-27 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置
KR20170016582A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 복수의 전원을 사용하는 메모리 장치 및 이를 포함하는 시스템
US9922701B2 (en) 2016-08-08 2018-03-20 Taiwan Semiconductor Manufacturing Company Limited Pre-charging bit lines through charge-sharing
US20250224887A1 (en) * 2024-01-05 2025-07-10 Wiliot, LTD. Voltage-adaptive memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JP3380852B2 (ja) * 1999-04-13 2003-02-24 松下電器産業株式会社 半導体記憶装置
JP4301760B2 (ja) * 2002-02-26 2009-07-22 株式会社ルネサステクノロジ 半導体装置
CN1679109B (zh) * 2002-08-28 2011-06-15 Nxp股份有限公司 减小状态保持电路功耗的方法、状态保持电路以及电子器件
JP4388274B2 (ja) * 2002-12-24 2009-12-24 株式会社ルネサステクノロジ 半導体記憶装置
JP2005293751A (ja) 2004-04-01 2005-10-20 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ
JP2007157287A (ja) * 2005-12-07 2007-06-21 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4936749B2 (ja) * 2006-03-13 2012-05-23 株式会社東芝 半導体記憶装置

Similar Documents

Publication Publication Date Title
JP2008293594A5 (enExample)
US7483287B2 (en) Semiconductor memory
JP5288391B2 (ja) 半導体記憶装置
US8064241B2 (en) Semiconductor memory including voltage detection circuit for generating sense amplifier signal
TWI485705B (zh) 具備列式讀取及／或寫入輔助電路之記憶體電路
TWI570718B (zh) 寫輔助電路和記憶單元
US8792293B2 (en) Single-ended sense amplifier for solid-state memories
US9589630B2 (en) Low voltage current reference generator for a sensing amplifier
US9837134B2 (en) Semiconductor device and system including sense amplifier and pre-charge voltage by a variation
JP2007143151A5 (enExample)
KR102326332B1 (ko) 독출 컬럼 선택 네거티브 부스트 드라이버 회로 및 시스템
JP2003223788A5 (enExample)
KR101369249B1 (ko) 비휘발성 메모리의 센스 앰프 회로 장치
US9406355B1 (en) Sense amplifier
TW202044244A (zh) 低功率記憶體
JP5784558B2 (ja) 半導体記憶装置
KR100689005B1 (ko) 반도체 메모리
WO2005091301A1 (ja) 強誘電体メモリ
US7286389B2 (en) Low-power, p-channel enhancement-type metal-oxide semiconductor field-effect transistor (PMOSFET) SRAM cells
US6188601B1 (en) Ferroelectric memory device having single bit line coupled to at least one memory cell
US7193888B2 (en) Nonvolatile memory circuit based on change in MIS transistor characteristics
US7321505B2 (en) Nonvolatile memory utilizing asymmetric characteristics of hot-carrier effect
US20200106005A1 (en) Magnetoresistive dynamic random access memory cell
US8004916B2 (en) Semiconductor circuit
TWI550632B (zh) 非揮發靜態隨機存取記憶體電路