JP5288391B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5288391B2
JP5288391B2 JP2007138214A JP2007138214A JP5288391B2 JP 5288391 B2 JP5288391 B2 JP 5288391B2 JP 2007138214 A JP2007138214 A JP 2007138214A JP 2007138214 A JP2007138214 A JP 2007138214A JP 5288391 B2 JP5288391 B2 JP 5288391B2
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JP
Japan
Prior art keywords
power supply
supply voltage
channel mos
memory cell
mos transistor
Prior art date
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Active
Application number
JP2007138214A
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English (en)
Japanese (ja)
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JP2008293594A (ja
JP2008293594A5 (enExample
Inventor
宏明 中井
広利 佐藤
清恭 赤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2007138214A priority Critical patent/JP5288391B2/ja
Priority to US12/153,308 priority patent/US7826298B2/en
Publication of JP2008293594A publication Critical patent/JP2008293594A/ja
Publication of JP2008293594A5 publication Critical patent/JP2008293594A5/ja
Application granted granted Critical
Publication of JP5288391B2 publication Critical patent/JP5288391B2/ja
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Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP2007138214A 2007-05-24 2007-05-24 半導体記憶装置 Active JP5288391B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007138214A JP5288391B2 (ja) 2007-05-24 2007-05-24 半導体記憶装置
US12/153,308 US7826298B2 (en) 2007-05-24 2008-05-16 Semiconductor memory device with low standby current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007138214A JP5288391B2 (ja) 2007-05-24 2007-05-24 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2008293594A JP2008293594A (ja) 2008-12-04
JP2008293594A5 JP2008293594A5 (enExample) 2010-04-02
JP5288391B2 true JP5288391B2 (ja) 2013-09-11

Family

ID=40072257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007138214A Active JP5288391B2 (ja) 2007-05-24 2007-05-24 半導体記憶装置

Country Status (2)

Country Link
US (1) US7826298B2 (enExample)
JP (1) JP5288391B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4353393B2 (ja) * 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
US8259486B2 (en) * 2009-08-03 2012-09-04 Stmicroelectronics International N.V. Self-timed write boost for SRAM cell with self mode control
JP5190542B2 (ja) * 2009-09-02 2013-04-24 パナソニック株式会社 半導体記憶装置
CN102023938B (zh) * 2009-09-18 2013-04-24 鸿富锦精密工业（深圳）有限公司 电子装置及断电保护方法
US8570823B2 (en) * 2010-02-18 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier with low sensing margin and high device variation tolerance
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013232257A (ja) * 2012-04-27 2013-11-14 Renesas Electronics Corp マルチポートメモリを備える半導体装置
JP6371172B2 (ja) 2014-09-09 2018-08-08 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP6383637B2 (ja) 2014-10-27 2018-08-29 ルネサスエレクトロニクス株式会社 半導体装置
KR20170016582A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 복수의 전원을 사용하는 메모리 장치 및 이를 포함하는 시스템
US9922701B2 (en) 2016-08-08 2018-03-20 Taiwan Semiconductor Manufacturing Company Limited Pre-charging bit lines through charge-sharing
US20250224887A1 (en) * 2024-01-05 2025-07-10 Wiliot, LTD. Voltage-adaptive memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3549602B2 (ja) * 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JP3380852B2 (ja) * 1999-04-13 2003-02-24 松下電器産業株式会社 半導体記憶装置
JP4301760B2 (ja) * 2002-02-26 2009-07-22 株式会社ルネサステクノロジ 半導体装置
CN1679109B (zh) * 2002-08-28 2011-06-15 Nxp股份有限公司 减小状态保持电路功耗的方法、状态保持电路以及电子器件
JP4388274B2 (ja) * 2002-12-24 2009-12-24 株式会社ルネサステクノロジ 半導体記憶装置
JP2005293751A (ja) 2004-04-01 2005-10-20 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ
JP2007157287A (ja) * 2005-12-07 2007-06-21 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4936749B2 (ja) * 2006-03-13 2012-05-23 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
JP2008293594A (ja) 2008-12-04
US7826298B2 (en) 2010-11-02
US20080291754A1 (en) 2008-11-27

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