JP2008292997A - 液晶表示装置の作製方法 - Google Patents
液晶表示装置の作製方法 Download PDFInfo
- Publication number
- JP2008292997A JP2008292997A JP2008107529A JP2008107529A JP2008292997A JP 2008292997 A JP2008292997 A JP 2008292997A JP 2008107529 A JP2008107529 A JP 2008107529A JP 2008107529 A JP2008107529 A JP 2008107529A JP 2008292997 A JP2008292997 A JP 2008292997A
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- JP
- Japan
- Prior art keywords
- liquid crystal
- substrate
- substrates
- sealing material
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 233
- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 241
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 239000003566 sealing material Substances 0.000 claims description 104
- 239000011521 glass Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 25
- 239000000565 sealant Substances 0.000 abstract description 16
- 239000010432 diamond Substances 0.000 abstract description 5
- 229910003460 diamond Inorganic materials 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 64
- 239000000463 material Substances 0.000 description 26
- 238000002347 injection Methods 0.000 description 25
- 239000007924 injection Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 20
- 239000011159 matrix material Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011882 ultra-fine particle Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 division Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
- G02F1/13415—Drop filling process
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008107529A JP2008292997A (ja) | 2007-04-27 | 2008-04-17 | 液晶表示装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007119324 | 2007-04-27 | ||
| JP2008107529A JP2008292997A (ja) | 2007-04-27 | 2008-04-17 | 液晶表示装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014020882A Division JP2014081660A (ja) | 2007-04-27 | 2014-02-06 | 液晶表示装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008292997A true JP2008292997A (ja) | 2008-12-04 |
| JP2008292997A5 JP2008292997A5 (enExample) | 2011-06-23 |
Family
ID=39887542
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008107529A Withdrawn JP2008292997A (ja) | 2007-04-27 | 2008-04-17 | 液晶表示装置の作製方法 |
| JP2014020882A Withdrawn JP2014081660A (ja) | 2007-04-27 | 2014-02-06 | 液晶表示装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014020882A Withdrawn JP2014081660A (ja) | 2007-04-27 | 2014-02-06 | 液晶表示装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US8013973B2 (enExample) |
| JP (2) | JP2008292997A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010204405A (ja) * | 2009-03-04 | 2010-09-16 | Epson Imaging Devices Corp | 横電界方式の液晶表示パネルの製造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101337264B1 (ko) * | 2006-02-28 | 2013-12-05 | 삼성디스플레이 주식회사 | 터치 패널, 이를 구비한 표시 장치 및 그 제조 방법 |
| US8721380B2 (en) * | 2009-08-12 | 2014-05-13 | Konica Minolta Holdings, Inc. | Method for manufacturing display panel |
| KR101267534B1 (ko) * | 2009-10-30 | 2013-05-23 | 엘지디스플레이 주식회사 | 유기전계발광소자의 제조방법 |
| JP6126775B2 (ja) | 2010-06-25 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TWI419094B (zh) * | 2010-09-10 | 2013-12-11 | Au Optronics Corp | 可撓性顯示面板 |
| CN104808396A (zh) * | 2015-05-13 | 2015-07-29 | 京东方科技集团股份有限公司 | 一种液晶盒及其制备方法、显示装置 |
| CN110418996A (zh) * | 2017-01-20 | 2019-11-05 | 株式会社Nsc | 液晶面板制造方法 |
| IL264045B2 (en) * | 2018-12-31 | 2023-08-01 | Elbit Systems Ltd | Direct view display with transparent variable optical power elements |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001215479A (ja) * | 2000-01-28 | 2001-08-10 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置並びに電子機器 |
| JP2001215480A (ja) * | 2000-02-01 | 2001-08-10 | Nec Corp | 液晶表示基板の製造方法及び液晶表示基板 |
| JP2001282147A (ja) * | 2000-03-31 | 2001-10-12 | Minolta Co Ltd | 積層型表示パネルの製造方法 |
| JP2002014361A (ja) * | 2000-06-30 | 2002-01-18 | Minolta Co Ltd | 液晶表示パネルの製造方法及び装置 |
| JP2005099270A (ja) * | 2003-09-24 | 2005-04-14 | Sharp Corp | 液晶表示パネルの製造方法および液晶表示パネルの製造装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4691995A (en) | 1985-07-15 | 1987-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal filling device |
| JP3074111B2 (ja) * | 1994-05-27 | 2000-08-07 | シャープ株式会社 | 液晶パネル及びその製造方法 |
| US5684556A (en) * | 1994-06-02 | 1997-11-04 | Canon Kabushiki Kaisha | Process for producing liquid crystal device |
| WO1997016764A1 (fr) * | 1995-11-02 | 1997-05-09 | Seiko Epson Corporation | Procede de fabrication d'un panneau a cristaux liquides |
| US5936695A (en) * | 1996-03-29 | 1999-08-10 | Kabushiki Kaisha Toshiba | Liquid crystal display device and method of fabricating same |
| JP2000167681A (ja) * | 1998-12-04 | 2000-06-20 | Samsung Electronics Co Ltd | レ―ザ切断用基板,液晶表示装置パネルおよび液晶表示装置パネルの製造方法 |
| US6355125B1 (en) * | 1999-03-26 | 2002-03-12 | Agfa-Gevaert | Method for making an electric or electronic module comprising a glass laminate |
| JP3471664B2 (ja) * | 1999-07-08 | 2003-12-02 | Nec液晶テクノロジー株式会社 | 液晶セル用貼り合わせ基板の分断装置 |
| JP4038431B2 (ja) | 2001-03-16 | 2008-01-23 | 三星ダイヤモンド工業株式会社 | スクライブ方法及びカッターホィール並びにそのカッターホィールを用いたスクライブ装置、そのカッターホィールを製造するカッターホィール製造装置 |
| US6975380B2 (en) | 2002-07-09 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a liquid crystal display device |
| US6891592B2 (en) * | 2002-07-26 | 2005-05-10 | Intel Corporation | Wafer level electro-optical sort testing and wafer level assembly of micro liquid crystal-on silicon (LCOS) devices |
| TWI380080B (en) * | 2003-03-07 | 2012-12-21 | Semiconductor Energy Lab | Liquid crystal display device and method for manufacturing the same |
| US7889309B2 (en) | 2003-09-24 | 2011-02-15 | Sharp Kabushiki Kaisha | Manufacturing method of liquid crystal display panel and manufacturing apparatus of liquid crystal display panel |
-
2008
- 2008-04-17 JP JP2008107529A patent/JP2008292997A/ja not_active Withdrawn
- 2008-04-24 US US12/149,010 patent/US8013973B2/en not_active Expired - Fee Related
-
2011
- 2011-08-31 US US13/222,333 patent/US8310650B2/en not_active Expired - Fee Related
-
2014
- 2014-02-06 JP JP2014020882A patent/JP2014081660A/ja not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001215479A (ja) * | 2000-01-28 | 2001-08-10 | Seiko Epson Corp | 電気光学装置の製造方法及び電気光学装置並びに電子機器 |
| JP2001215480A (ja) * | 2000-02-01 | 2001-08-10 | Nec Corp | 液晶表示基板の製造方法及び液晶表示基板 |
| JP2001282147A (ja) * | 2000-03-31 | 2001-10-12 | Minolta Co Ltd | 積層型表示パネルの製造方法 |
| JP2002014361A (ja) * | 2000-06-30 | 2002-01-18 | Minolta Co Ltd | 液晶表示パネルの製造方法及び装置 |
| JP2005099270A (ja) * | 2003-09-24 | 2005-04-14 | Sharp Corp | 液晶表示パネルの製造方法および液晶表示パネルの製造装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010204405A (ja) * | 2009-03-04 | 2010-09-16 | Epson Imaging Devices Corp | 横電界方式の液晶表示パネルの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110312114A1 (en) | 2011-12-22 |
| US8013973B2 (en) | 2011-09-06 |
| US8310650B2 (en) | 2012-11-13 |
| US20080268738A1 (en) | 2008-10-30 |
| JP2014081660A (ja) | 2014-05-08 |
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