JP2008288585A - イメージセンサ及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 56
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 56
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 29
- 239000012212 insulator Substances 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
【解決手段】本発明に係るイメージセンサは、基板上に形成された回路(circuitry)と、上記基板上に形成された下部配線と、上記下部配線上に形成されたカーボンナノチューブと、上記カーボンナノチューブに形成された導電性高分子と、上記カーボンナノチューブ上に形成された透明電極とを含むことを特徴とする。
【選択図】図1
Description
図1は、第1実施形態に係るイメージセンサの断面図である。
図3は、第2実施形態に係るイメージセンサの断面図である。
図4は、第3実施形態に係るイメージセンサの断面図である。
図5は、第4実施形態に係るイメージセンサの断面図である。
図6は、第5実施形態に係るイメージセンサの断面図である。
Claims (11)
- 基板上に形成された回路(circuitry)と、
前記基板上に形成された下部配線と、
前記下部配線上に形成されたカーボンナノチューブと、
前記カーボンナノチューブに形成された導電性高分子と、
前記カーボンナノチューブ上に形成された透明電極と、
を含むことを特徴とするイメージセンサ。 - 前記下部配線上に形成された第1導電型伝導層をさらに含み、
前記カーボンナノチューブは第2導電型で導電されて、前記第1導電型伝導層上に形成されたことを特徴とする請求項1に記載のイメージセンサ。 - 前記第1導電型伝導層上に形成された真性層(intrinsic layer)をさらに含み、
前記カーボンナノチューブは第2導電型で導電されて、前記真性層上に形成されたことを特徴とする請求項2に記載のイメージセンサ。 - 前記カーボンナノチューブは、第1導電型で導電されて形成され、
前記第1導電型カーボンナノチューブ上に形成された真性層と、
前記真性層上に形成された第2導電型伝導層と、
をさらに含むことを特徴とする請求項1に記載のイメージセンサ。 - 前記導電性高分子は、カラーポリマーで形成されたことを特徴とする請求項1に記載のイメージセンサ。
- 回路(circuitry)を基板上に形成するステップと、
前記基板上に下部配線を形成するステップと、
前記下部配線上にカーボンナノチューブを形成するステップと、
前記カーボンナノチューブに導電性高分子を形成するステップと、
前記カーボンナノチューブ上に透明電極を形成するステップと、
を含むことを特徴とするイメージセンサの製造方法。 - 前記カーボンナノチューブを形成するステップは、
前記下部配線上に触媒剤を形成するステップと、
前記触媒剤上にカーボンナノチューブを蒸着するステップと、
を含むことを特徴とする請求項6に記載のイメージセンサの製造方法。 - 前記基板上に下部配線を形成するステップの後に、
前記下部配線上に第1導電型伝導層を形成するステップをさらに含み、
前記カーボンナノチューブは第2導電型で導電されて、前記第1導電型伝導層上に形成されることを特徴とする請求項6に記載のイメージセンサの製造方法。 - 前記第1導電型伝導層上に真性層(intrinsic layer)を形成するステップをさらに含み、
前記カーボンナノチューブは第2導電型で導電されて、前記真性層上に形成されることを特徴とする請求項8に記載のイメージセンサの製造方法。 - 前記カーボンナノチューブは第1導電型で導電されて形成され、
前記第1導電型カーボンナノチューブ上に真性層を形成するステップと、
前記真性層上に第2導電型伝導層を形成するステップと、
をさらに含むことを特徴とする請求項6に記載のイメージセンサの製造方法。 - 前記導電性高分子を形成するステップは、カラーポリマーを利用して形成されることを特徴とする請求項6に記載のイメージセンサの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0047589 | 2007-05-16 | ||
KR1020070047589A KR100901236B1 (ko) | 2007-05-16 | 2007-05-16 | 이미지센서 및 그 제조방법 |
Publications (2)
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JP2008288585A true JP2008288585A (ja) | 2008-11-27 |
JP4982426B2 JP4982426B2 (ja) | 2012-07-25 |
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JP2008125701A Expired - Fee Related JP4982426B2 (ja) | 2007-05-16 | 2008-05-13 | イメージセンサ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7732805B2 (ja) |
JP (1) | JP4982426B2 (ja) |
KR (1) | KR100901236B1 (ja) |
CN (1) | CN101308862B (ja) |
DE (1) | DE102008023461A1 (ja) |
TW (1) | TW200847412A (ja) |
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JP2013513254A (ja) * | 2009-12-08 | 2013-04-18 | ゼーナ テクノロジーズ,インク. | ナノワイヤ構造の光検出器を備えるアクティブピクセルセンサー |
JP2013513253A (ja) * | 2009-12-08 | 2013-04-18 | ゼーナ テクノロジーズ,インク. | ナノワイヤを有する垂直フォトゲート(vpg)ピクセル構造 |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
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2007
- 2007-05-16 KR KR1020070047589A patent/KR100901236B1/ko not_active IP Right Cessation
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2008
- 2008-05-13 JP JP2008125701A patent/JP4982426B2/ja not_active Expired - Fee Related
- 2008-05-13 US US12/119,838 patent/US7732805B2/en not_active Expired - Fee Related
- 2008-05-14 DE DE102008023461A patent/DE102008023461A1/de not_active Withdrawn
- 2008-05-16 CN CN2008100992961A patent/CN101308862B/zh not_active Expired - Fee Related
- 2008-05-16 TW TW097118264A patent/TW200847412A/zh unknown
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Also Published As
Publication number | Publication date |
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DE102008023461A1 (de) | 2008-12-04 |
US7732805B2 (en) | 2010-06-08 |
KR20080101189A (ko) | 2008-11-21 |
JP4982426B2 (ja) | 2012-07-25 |
KR100901236B1 (ko) | 2009-06-08 |
CN101308862B (zh) | 2011-01-19 |
TW200847412A (en) | 2008-12-01 |
CN101308862A (zh) | 2008-11-19 |
US20080283883A1 (en) | 2008-11-20 |
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