JP2008270746A5 - - Google Patents

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Publication number
JP2008270746A5
JP2008270746A5 JP2008052417A JP2008052417A JP2008270746A5 JP 2008270746 A5 JP2008270746 A5 JP 2008270746A5 JP 2008052417 A JP2008052417 A JP 2008052417A JP 2008052417 A JP2008052417 A JP 2008052417A JP 2008270746 A5 JP2008270746 A5 JP 2008270746A5
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JP
Japan
Prior art keywords
substrate
absorber layer
depositing
temperature
layer comprises
Prior art date
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Application number
JP2008052417A
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English (en)
Japanese (ja)
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JP5422132B2 (ja
JP2008270746A (ja
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Publication date
Priority claimed from US11/681,343 external-priority patent/US7867868B2/en
Application filed filed Critical
Publication of JP2008270746A publication Critical patent/JP2008270746A/ja
Publication of JP2008270746A5 publication Critical patent/JP2008270746A5/ja
Application granted granted Critical
Publication of JP5422132B2 publication Critical patent/JP5422132B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008052417A 2007-03-02 2008-03-03 アブソーバ層の候補および塗布技術 Active JP5422132B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/681,343 2007-03-02
US11/681,343 US7867868B2 (en) 2007-03-02 2007-03-02 Absorber layer candidates and techniques for application

Publications (3)

Publication Number Publication Date
JP2008270746A JP2008270746A (ja) 2008-11-06
JP2008270746A5 true JP2008270746A5 (enExample) 2011-04-28
JP5422132B2 JP5422132B2 (ja) 2014-02-19

Family

ID=39413092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008052417A Active JP5422132B2 (ja) 2007-03-02 2008-03-03 アブソーバ層の候補および塗布技術

Country Status (6)

Country Link
US (1) US7867868B2 (enExample)
EP (1) EP1965419B1 (enExample)
JP (1) JP5422132B2 (enExample)
KR (1) KR100931766B1 (enExample)
CN (1) CN101256938A (enExample)
TW (1) TWI430370B (enExample)

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US20120015459A1 (en) * 2010-07-15 2012-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal Leveling for Semiconductor Devices
US8603575B1 (en) * 2010-10-06 2013-12-10 Nanosolar, Inc. Thin-film absorber formation method
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
GB201211786D0 (en) * 2012-07-03 2012-08-15 Cambridge Display Tech Ltd Organic electronic device manufacturing techniques
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
JP5770880B2 (ja) * 2014-04-08 2015-08-26 株式会社Screenホールディングス 熱処理方法
CN105047560A (zh) * 2015-07-01 2015-11-11 复旦大学 微波退火工艺
CN105977153B (zh) * 2016-05-17 2019-09-17 上海华力微电子有限公司 超浅结退火方法
CN106099079A (zh) * 2016-08-26 2016-11-09 宁德时代新能源科技股份有限公司 二次电池负极材料,其制备方法及含有该负极材料的电池
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

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US3421967A (en) * 1965-03-03 1969-01-14 Kaumagraph Co Decorated thermosetting plastic article and method of producing same
US3520656A (en) * 1966-03-30 1970-07-14 Du Pont Silicon carbide compositions
US4025661A (en) * 1972-11-13 1977-05-24 Rca Corporation Method of making viewing-screen structure for a cathode-ray tube
US4664768A (en) * 1985-03-28 1987-05-12 Westinghouse Electric Corp. Reinforced composites made by electro-phoretically coating graphite or carbon
US5308481A (en) * 1992-06-02 1994-05-03 Analytical Bio-Chemistry Laboratories, Inc. Chemically bound fullerenes to resin and silica supports and their use as stationary phases for chromatography
US5461123A (en) * 1994-07-14 1995-10-24 Union Carbide Chemicals & Plastics Technology Corporation Gas phase fluidized bed polyolefin polymerization process using sound waves
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JP2005072205A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器
US7109087B2 (en) 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
KR101254107B1 (ko) * 2003-10-03 2013-04-12 어플라이드 머티어리얼스, 인코포레이티드 다이나믹 표면 어닐링 프로세싱을 위한 흡수층
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