TWI430370B - 吸收層及其應用技術 - Google Patents
吸收層及其應用技術 Download PDFInfo
- Publication number
- TWI430370B TWI430370B TW097107143A TW97107143A TWI430370B TW I430370 B TWI430370 B TW I430370B TW 097107143 A TW097107143 A TW 097107143A TW 97107143 A TW97107143 A TW 97107143A TW I430370 B TWI430370 B TW I430370B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- absorbing layer
- carbon black
- annealing
- depositing
- Prior art date
Links
- 238000005516 engineering process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 137
- 238000000034 method Methods 0.000 claims description 66
- 239000006229 carbon black Substances 0.000 claims description 45
- 238000000137 annealing Methods 0.000 claims description 40
- 239000006096 absorbing agent Substances 0.000 claims description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 23
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910003472 fullerene Inorganic materials 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 239000000375 suspending agent Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005087 graphitization Methods 0.000 claims 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims 1
- 239000002250 absorbent Substances 0.000 description 20
- 230000002745 absorbent Effects 0.000 description 20
- 230000005855 radiation Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 230000005670 electromagnetic radiation Effects 0.000 description 10
- 238000013519 translation Methods 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 8
- 229910003481 amorphous carbon Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001652 electrophoretic deposition Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000004071 soot Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000004924 electrostatic deposition Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000008364 bulk solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011294 coal tar pitch Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002408 directed self-assembly Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- -1 ion ions Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000002006 petroleum coke Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Braking Arrangements (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/681,343 US7867868B2 (en) | 2007-03-02 | 2007-03-02 | Absorber layer candidates and techniques for application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200845225A TW200845225A (en) | 2008-11-16 |
| TWI430370B true TWI430370B (zh) | 2014-03-11 |
Family
ID=39413092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097107143A TWI430370B (zh) | 2007-03-02 | 2008-02-29 | 吸收層及其應用技術 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7867868B2 (enExample) |
| EP (1) | EP1965419B1 (enExample) |
| JP (1) | JP5422132B2 (enExample) |
| KR (1) | KR100931766B1 (enExample) |
| CN (1) | CN101256938A (enExample) |
| TW (1) | TWI430370B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7772064B2 (en) * | 2007-03-05 | 2010-08-10 | United Microelectronics Corp. | Method of fabricating self-aligned contact |
| US7947584B2 (en) * | 2008-05-02 | 2011-05-24 | Applied Materials, Inc. | Suitably short wavelength light for laser annealing of silicon in DSA type systems |
| US20120015459A1 (en) * | 2010-07-15 | 2012-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal Leveling for Semiconductor Devices |
| US8603575B1 (en) * | 2010-10-06 | 2013-12-10 | Nanosolar, Inc. | Thin-film absorber formation method |
| CN102637581A (zh) * | 2012-04-06 | 2012-08-15 | 上海华力微电子有限公司 | 一种防止硼掺杂层释气的方法 |
| GB201211786D0 (en) * | 2012-07-03 | 2012-08-15 | Cambridge Display Tech Ltd | Organic electronic device manufacturing techniques |
| US9029809B2 (en) * | 2012-11-30 | 2015-05-12 | Ultratech, Inc. | Movable microchamber system with gas curtain |
| CN103489763A (zh) * | 2013-09-29 | 2014-01-01 | 武汉新芯集成电路制造有限公司 | 一种避免离子注入掺杂离子释气的方法 |
| JP5770880B2 (ja) * | 2014-04-08 | 2015-08-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| CN105047560A (zh) * | 2015-07-01 | 2015-11-11 | 复旦大学 | 微波退火工艺 |
| CN105977153B (zh) * | 2016-05-17 | 2019-09-17 | 上海华力微电子有限公司 | 超浅结退火方法 |
| CN106099079A (zh) * | 2016-08-26 | 2016-11-09 | 宁德时代新能源科技股份有限公司 | 二次电池负极材料，其制备方法及含有该负极材料的电池 |
| CN107564801A (zh) * | 2017-08-31 | 2018-01-09 | 长江存储科技有限责任公司 | 一种退火方法 |
| CN110364434A (zh) * | 2019-07-19 | 2019-10-22 | 德淮半导体有限公司 | 退火方法和半导体器件的制造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2688576A (en) * | 1949-12-21 | 1954-09-07 | St Regis Paper Co | Electrically conductive resinous laminate |
| US3421967A (en) * | 1965-03-03 | 1969-01-14 | Kaumagraph Co | Decorated thermosetting plastic article and method of producing same |
| US3520656A (en) * | 1966-03-30 | 1970-07-14 | Du Pont | Silicon carbide compositions |
| US4025661A (en) * | 1972-11-13 | 1977-05-24 | Rca Corporation | Method of making viewing-screen structure for a cathode-ray tube |
| US4664768A (en) * | 1985-03-28 | 1987-05-12 | Westinghouse Electric Corp. | Reinforced composites made by electro-phoretically coating graphite or carbon |
| US5308481A (en) * | 1992-06-02 | 1994-05-03 | Analytical Bio-Chemistry Laboratories, Inc. | Chemically bound fullerenes to resin and silica supports and their use as stationary phases for chromatography |
| US5461123A (en) * | 1994-07-14 | 1995-10-24 | Union Carbide Chemicals & Plastics Technology Corporation | Gas phase fluidized bed polyolefin polymerization process using sound waves |
| US6276072B1 (en) * | 1997-07-10 | 2001-08-21 | Applied Materials, Inc. | Method and apparatus for heating and cooling substrates |
| US6302960B1 (en) * | 1998-11-23 | 2001-10-16 | Applied Materials, Inc. | Photoresist coater |
| US6627056B2 (en) * | 2000-02-16 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for ionized plasma deposition |
| US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
| KR100365414B1 (en) * | 2001-04-30 | 2002-12-18 | Hynix Semiconductor Inc | Method for forming ultra-shallow junction using laser annealing process |
| US6660449B2 (en) * | 2001-10-19 | 2003-12-09 | Eastman Kodak Company | Heat-sensitive compositions and imaging member containing carbon black and methods of imaging and printing |
| JP2004319538A (ja) * | 2003-04-10 | 2004-11-11 | Seiko Epson Corp | 半導体装置の製造方法、集積回路、電子光学装置及び電子機器 |
| JP2005072205A (ja) * | 2003-08-22 | 2005-03-17 | Seiko Epson Corp | 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器 |
| US7109087B2 (en) | 2003-10-03 | 2006-09-19 | Applied Materials, Inc. | Absorber layer for DSA processing |
| KR101254107B1 (ko) * | 2003-10-03 | 2013-04-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 다이나믹 표면 어닐링 프로세싱을 위한 흡수층 |
| US7422775B2 (en) * | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
| JP5057261B2 (ja) * | 2005-10-25 | 2012-10-24 | 東海カーボン株式会社 | カーボンブラック水性分散体及びその製造方法 |
| US20090026704A1 (en) * | 2007-07-24 | 2009-01-29 | Werner Alecsander Kling | 123 poker |
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2007
- 2007-03-02 US US11/681,343 patent/US7867868B2/en active Active
-
2008
- 2008-02-28 EP EP08152073.6A patent/EP1965419B1/en active Active
- 2008-02-29 CN CNA2008100063787A patent/CN101256938A/zh active Pending
- 2008-02-29 TW TW097107143A patent/TWI430370B/zh active
- 2008-02-29 KR KR1020080018836A patent/KR100931766B1/ko active Active
- 2008-03-03 JP JP2008052417A patent/JP5422132B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5422132B2 (ja) | 2014-02-19 |
| US7867868B2 (en) | 2011-01-11 |
| CN101256938A (zh) | 2008-09-03 |
| TW200845225A (en) | 2008-11-16 |
| EP1965419A3 (en) | 2011-03-23 |
| EP1965419A2 (en) | 2008-09-03 |
| KR100931766B1 (ko) | 2009-12-14 |
| US20080214014A1 (en) | 2008-09-04 |
| EP1965419B1 (en) | 2013-07-03 |
| JP2008270746A (ja) | 2008-11-06 |
| KR20080080936A (ko) | 2008-09-05 |
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