CN101256938A - 吸收层备选及应用技术 - Google Patents

吸收层备选及应用技术 Download PDF

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Publication number
CN101256938A
CN101256938A CNA2008100063787A CN200810006378A CN101256938A CN 101256938 A CN101256938 A CN 101256938A CN A2008100063787 A CNA2008100063787 A CN A2008100063787A CN 200810006378 A CN200810006378 A CN 200810006378A CN 101256938 A CN101256938 A CN 101256938A
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CN
China
Prior art keywords
substrate
absorbed layer
annealing
described substrate
carbon black
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Pending
Application number
CNA2008100063787A
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English (en)
Chinese (zh)
Inventor
约瑟夫·M·拉内什
布鲁斯·E·亚当斯
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN101256938A publication Critical patent/CN101256938A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Braking Arrangements (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Carbon And Carbon Compounds (AREA)
CNA2008100063787A 2007-03-02 2008-02-29 吸收层备选及应用技术 Pending CN101256938A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/681,343 2007-03-02
US11/681,343 US7867868B2 (en) 2007-03-02 2007-03-02 Absorber layer candidates and techniques for application

Publications (1)

Publication Number Publication Date
CN101256938A true CN101256938A (zh) 2008-09-03

Family

ID=39413092

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008100063787A Pending CN101256938A (zh) 2007-03-02 2008-02-29 吸收层备选及应用技术

Country Status (6)

Country Link
US (1) US7867868B2 (enExample)
EP (1) EP1965419B1 (enExample)
JP (1) JP5422132B2 (enExample)
KR (1) KR100931766B1 (enExample)
CN (1) CN101256938A (enExample)
TW (1) TWI430370B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
CN104412405A (zh) * 2012-07-03 2015-03-11 剑桥显示技术有限公司 有机电子器件制造技术
CN105977153A (zh) * 2016-05-17 2016-09-28 上海华力微电子有限公司 超浅结退火方法
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

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US7772064B2 (en) * 2007-03-05 2010-08-10 United Microelectronics Corp. Method of fabricating self-aligned contact
US7947584B2 (en) * 2008-05-02 2011-05-24 Applied Materials, Inc. Suitably short wavelength light for laser annealing of silicon in DSA type systems
US20120015459A1 (en) * 2010-07-15 2012-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal Leveling for Semiconductor Devices
US8603575B1 (en) * 2010-10-06 2013-12-10 Nanosolar, Inc. Thin-film absorber formation method
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain
JP5770880B2 (ja) * 2014-04-08 2015-08-26 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
CN105047560A (zh) * 2015-07-01 2015-11-11 复旦大学 微波退火工艺
CN106099079A (zh) * 2016-08-26 2016-11-09 宁德时代新能源科技股份有限公司 二次电池负极材料，其制备方法及含有该负极材料的电池

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US3421967A (en) * 1965-03-03 1969-01-14 Kaumagraph Co Decorated thermosetting plastic article and method of producing same
US3520656A (en) * 1966-03-30 1970-07-14 Du Pont Silicon carbide compositions
US4025661A (en) * 1972-11-13 1977-05-24 Rca Corporation Method of making viewing-screen structure for a cathode-ray tube
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US5308481A (en) * 1992-06-02 1994-05-03 Analytical Bio-Chemistry Laboratories, Inc. Chemically bound fullerenes to resin and silica supports and their use as stationary phases for chromatography
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KR100365414B1 (en) * 2001-04-30 2002-12-18 Hynix Semiconductor Inc Method for forming ultra-shallow junction using laser annealing process
US6660449B2 (en) * 2001-10-19 2003-12-09 Eastman Kodak Company Heat-sensitive compositions and imaging member containing carbon black and methods of imaging and printing
JP2004319538A (ja) * 2003-04-10 2004-11-11 Seiko Epson Corp 半導体装置の製造方法、集積回路、電子光学装置及び電子機器
JP2005072205A (ja) * 2003-08-22 2005-03-17 Seiko Epson Corp 熱処理方法、配線パターンの形成方法、電気光学装置の製造方法、電気光学装置及び電子機器
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KR101254107B1 (ko) * 2003-10-03 2013-04-12 어플라이드 머티어리얼스, 인코포레이티드 다이나믹 표면 어닐링 프로세싱을 위한 흡수층
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JP5057261B2 (ja) * 2005-10-25 2012-10-24 東海カーボン株式会社 カーボンブラック水性分散体及びその製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637581A (zh) * 2012-04-06 2012-08-15 上海华力微电子有限公司 一种防止硼掺杂层释气的方法
CN104412405A (zh) * 2012-07-03 2015-03-11 剑桥显示技术有限公司 有机电子器件制造技术
CN103489763A (zh) * 2013-09-29 2014-01-01 武汉新芯集成电路制造有限公司 一种避免离子注入掺杂离子释气的方法
CN105977153A (zh) * 2016-05-17 2016-09-28 上海华力微电子有限公司 超浅结退火方法
CN107564801A (zh) * 2017-08-31 2018-01-09 长江存储科技有限责任公司 一种退火方法
CN110364434A (zh) * 2019-07-19 2019-10-22 德淮半导体有限公司 退火方法和半导体器件的制造方法

Also Published As

Publication number Publication date
JP5422132B2 (ja) 2014-02-19
EP1965419B1 (en) 2013-07-03
JP2008270746A (ja) 2008-11-06
KR100931766B1 (ko) 2009-12-14
KR20080080936A (ko) 2008-09-05
US20080214014A1 (en) 2008-09-04
EP1965419A2 (en) 2008-09-03
TWI430370B (zh) 2014-03-11
TW200845225A (en) 2008-11-16
EP1965419A3 (en) 2011-03-23
US7867868B2 (en) 2011-01-11

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