JP2008263025A5 - - Google Patents

Download PDF

Info

Publication number
JP2008263025A5
JP2008263025A5 JP2007104039A JP2007104039A JP2008263025A5 JP 2008263025 A5 JP2008263025 A5 JP 2008263025A5 JP 2007104039 A JP2007104039 A JP 2007104039A JP 2007104039 A JP2007104039 A JP 2007104039A JP 2008263025 A5 JP2008263025 A5 JP 2008263025A5
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor single
semiconductor
manufacturing
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007104039A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008263025A (ja
JP5168990B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007104039A priority Critical patent/JP5168990B2/ja
Priority claimed from JP2007104039A external-priority patent/JP5168990B2/ja
Publication of JP2008263025A publication Critical patent/JP2008263025A/ja
Publication of JP2008263025A5 publication Critical patent/JP2008263025A5/ja
Application granted granted Critical
Publication of JP5168990B2 publication Critical patent/JP5168990B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007104039A 2007-04-11 2007-04-11 半導体基板の製造方法 Active JP5168990B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007104039A JP5168990B2 (ja) 2007-04-11 2007-04-11 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007104039A JP5168990B2 (ja) 2007-04-11 2007-04-11 半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2008263025A JP2008263025A (ja) 2008-10-30
JP2008263025A5 true JP2008263025A5 (de) 2010-02-04
JP5168990B2 JP5168990B2 (ja) 2013-03-27

Family

ID=39985291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007104039A Active JP5168990B2 (ja) 2007-04-11 2007-04-11 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JP5168990B2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5205840B2 (ja) * 2007-07-06 2013-06-05 信越半導体株式会社 半導体基板の製造方法
TW202134488A (zh) 2019-10-24 2021-09-16 日商信越半導體股份有限公司 半導體基板的製造方法及半導體基板
JP7247902B2 (ja) 2020-01-10 2023-03-29 信越半導体株式会社 エピタキシャルウェーハの製造方法
CN116685723A (zh) 2021-01-25 2023-09-01 信越半导体株式会社 外延晶圆的制造方法
CN114005753B (zh) * 2021-10-29 2023-07-11 西安微电子技术研究所 一种igbt产品的氧化工艺方法及氧化后igbt产品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04311029A (ja) * 1991-04-09 1992-11-02 Seiko Epson Corp 半導体薄膜の製造方法
JPH09162088A (ja) * 1995-12-13 1997-06-20 Asahi Chem Ind Co Ltd 半導体基板とその製造方法
JP2003303971A (ja) * 2002-04-09 2003-10-24 Matsushita Electric Ind Co Ltd 半導体基板及び半導体装置
JP3604018B2 (ja) * 2002-05-24 2004-12-22 独立行政法人科学技術振興機構 シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法
US7045432B2 (en) * 2004-02-04 2006-05-16 Freescale Semiconductor, Inc. Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)
JP4095615B2 (ja) * 2004-02-16 2008-06-04 光 小林 酸化膜の形成方法、半導体装置、半導体装置の製造方法

Similar Documents

Publication Publication Date Title
JP2012084860A5 (de)
JP2008532260A5 (de)
JP2008508696A5 (de)
JP2011142310A5 (ja) 半導体装置の作製方法
JP2011155249A5 (ja) 半導体装置の作製方法
JP2011146697A5 (de)
WO2008105136A1 (ja) シリコン単結晶ウエーハの製造方法
JP2005537660A5 (de)
TW200731406A (en) Methods of forming SiC MOSFETs with high inversion layer mobility
JP2011192958A5 (de)
JP2012509581A5 (de)
JP2011135051A5 (de)
JP2008263025A5 (de)
WO2007101136A3 (en) High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material
WO2010082733A3 (ko) 열전 나노와이어 및 그의 제조방법
EP2105957A3 (de) Verfahren zur Herstellung eines SOI-Substrats und Verfahren zur Herstellung einer Halbleitervorrichtung
CN107287578A (zh) 一种大范围均匀双层二硫化钼薄膜的化学气相沉积制备方法
JP2010103514A5 (de)
JP2010157721A5 (de)
JP2015078093A5 (de)
JP2013105966A5 (de)
JP2014144880A5 (de)
WO2015100827A1 (zh) 定义多晶硅生长方向的方法
JP2010228924A5 (de)
EP2053645A3 (de) Verfahren zur Herstellung eines Halbleitersubstrats