JP2008262052A - 光導波路装置および光導波路装置の製造方法 - Google Patents
光導波路装置および光導波路装置の製造方法 Download PDFInfo
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- JP2008262052A JP2008262052A JP2007105178A JP2007105178A JP2008262052A JP 2008262052 A JP2008262052 A JP 2008262052A JP 2007105178 A JP2007105178 A JP 2007105178A JP 2007105178 A JP2007105178 A JP 2007105178A JP 2008262052 A JP2008262052 A JP 2008262052A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010453 quartz Substances 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- -1 hydrogen ions Chemical class 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 14
- 238000005530 etching Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 25
- 238000005468 ion implantation Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 238000004381 surface treatment Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical class [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/48—Variable attenuator
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/967—Semiconductor on specified insulator
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】SOI膜12の上にフォトレジスト13を塗布し、フォトレジストマスク14を形成して、フォトレジストマスク14で被覆されてない領域のSOI膜をエッチング除去して、単結晶シリコンコアを有する光導波路15を得る。そして、1.1μm以下の波長の光を上述の単結晶シリコンコアに照射可能な発光素子を石英基板20の裏面側に設けて光導波路装置とする。発光素子30からの光照射がない場合には、光導波路15中を導波する光はそのまま導波するが、発光素子30から光照射されて当該照射領域16に電子−正孔対が形成されると、光導波路15中を導波中の光はこの電子−正孔対によって吸収されるため、発光素子30からの光照射の有無(ONまたはOFF)により、光信号のON/OFFを行うスイッチング(変調)が可能となる。
【選択図】図2
Description
11 イオン注入層
12 SOI膜
13 フォトレジスト
14 フォトレジストマスク
15 光導波路
16 光照射領域
20 石英基板
30 発光素子
40 発光素子を作り込んだ基板
Claims (8)
- 石英基板の表面に設けられた単結晶シリコンコアを有する光導波路と、前記石英基板の裏面側に設けられ1.1μm以下の波長の光を前記単結晶シリコンコアに照射可能な発光素子とを備えている光導波路装置。
- 前記光導波路はメサ型光導波路である請求項1に記載の光導波路装置。
- 前記光導波路はリッジ型光導波路である請求項1に記載の光導波路装置。
- 前記光導波路中を導波する光の波長が1.55μm帯の光であり、前記発光素子がGaAs系発光素子である請求項1乃至3の何れかに記載の光導波路装置。
- 単結晶シリコン基板の表面から水素イオンを注入する工程Aと、石英基板および前記単結晶シリコン基板の少なくとも一方の表面に活性化処理を施す工程Bと、前記石英基板と前記単結晶シリコン基板の表面同士を貼り合わせる工程Cと、前記単結晶シリコン基板からシリコン膜を機械的に剥離して前記石英基板の表面上にSOI膜を形成してSOI基板とする工程Dと、前記SOI膜に光導波路用の単結晶シリコンコアを形成する工程Eと、1.1μm以下の波長の光を前記単結晶シリコンコアに照射可能な発光素子を前記石英基板の裏面側に設ける工程Fとを備えている光導波路装置の製造方法。
- 前記工程Dに続いて、前記SOI膜に平坦化を施す工程Gを備えている請求項5に記載の光導波路装置の製造方法。
- 前記工程Eに続いて、前記単結晶シリコンコアを被覆するシリコン酸化膜を形成する工程Hを備えている請求項5又は6に記載の光導波路装置の製造方法。
- 前記工程Bの活性化処理がプラズマ処理又はオゾン処理の少なくとも一方である請求項5乃至7の何れか1項に記載の光導波路装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007105178A JP4925902B2 (ja) | 2007-04-12 | 2007-04-12 | 光導波路装置および光導波路装置の製造方法 |
US12/076,617 US7799589B2 (en) | 2007-04-12 | 2008-03-20 | Optical waveguide apparatus and method for manufacturing the same |
EP08005515.5A EP1980884B1 (en) | 2007-04-12 | 2008-03-25 | Optical waveguide apparatus and method for manufacturing the same |
CN2008100909786A CN101285912B (zh) | 2007-04-12 | 2008-04-08 | 光波导管装置及光波导管装置的制造方法 |
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JP2007105178A JP4925902B2 (ja) | 2007-04-12 | 2007-04-12 | 光導波路装置および光導波路装置の製造方法 |
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JP2008262052A true JP2008262052A (ja) | 2008-10-30 |
JP4925902B2 JP4925902B2 (ja) | 2012-05-09 |
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JP2007105178A Active JP4925902B2 (ja) | 2007-04-12 | 2007-04-12 | 光導波路装置および光導波路装置の製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7799589B2 (ja) |
EP (1) | EP1980884B1 (ja) |
JP (1) | JP4925902B2 (ja) |
CN (1) | CN101285912B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010250270A (ja) * | 2009-04-10 | 2010-11-04 | Emprie Technology Development LLC | 光回路デバイス及び方法 |
JP2013505485A (ja) * | 2009-09-25 | 2013-02-14 | インテル・コーポレーション | ウェハ貼り合わせ技術を利用する光変調器 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8269931B2 (en) * | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
JP5690324B2 (ja) * | 2010-02-23 | 2015-03-25 | パナソニックIpマネジメント株式会社 | 光モジュール |
US8559127B2 (en) * | 2010-12-22 | 2013-10-15 | Seagate Technology Llc | Integrated heat assisted magnetic recording head with extended cavity vertical cavity surface emitting laser diode |
US8946864B2 (en) | 2011-03-16 | 2015-02-03 | The Aerospace Corporation | Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same |
US9329336B2 (en) | 2012-07-06 | 2016-05-03 | Micron Technology, Inc. | Method of forming a hermetically sealed fiber to chip connection |
US8995800B2 (en) | 2012-07-06 | 2015-03-31 | Teledyne Scientific & Imaging, Llc | Method of fabricating silicon waveguides with embedded active circuitry |
US9324579B2 (en) | 2013-03-14 | 2016-04-26 | The Aerospace Corporation | Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04304414A (ja) * | 1991-04-01 | 1992-10-27 | Nippon Telegr & Teleph Corp <Ntt> | 光素子および光素子材料 |
JP2003270593A (ja) * | 2002-03-18 | 2003-09-25 | Univ Kansai | 光スイッチ |
JP2005157210A (ja) * | 2003-11-28 | 2005-06-16 | Nippon Telegr & Teleph Corp <Ntt> | シリコン光導波路の製造方法 |
JP2006210899A (ja) * | 2004-12-28 | 2006-08-10 | Shin Etsu Chem Co Ltd | Soiウエーハの製造方法及びsoiウェーハ |
Family Cites Families (8)
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---|---|---|---|---|
JPS60108818A (ja) * | 1983-11-18 | 1985-06-14 | Matsushita Electric Ind Co Ltd | 導波光の制御方法 |
US4941725A (en) * | 1988-08-05 | 1990-07-17 | Canadian Patents & Development Limited | All-optical planar modulator structure with channel waveguides |
JP2002323633A (ja) | 2001-04-25 | 2002-11-08 | Oki Electric Ind Co Ltd | 光導波路装置及びその製造方法 |
JP4308587B2 (ja) | 2002-06-24 | 2009-08-05 | 株式会社リコー | 文書群管理装置 |
JP5410001B2 (ja) * | 2003-11-20 | 2014-02-05 | ライトワイヤー,エルエルシー | シリコンベースショットキ障壁赤外線光検出器 |
JP4639810B2 (ja) | 2005-01-17 | 2011-02-23 | ソニー株式会社 | 半導体装置、基板製造方法および電子機器 |
KR100972213B1 (ko) * | 2005-12-27 | 2010-07-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Soi 웨이퍼의 제조 방법 및 soi 웨이퍼 |
FR2896619B1 (fr) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat composite a proprietes electriques ameliorees |
-
2007
- 2007-04-12 JP JP2007105178A patent/JP4925902B2/ja active Active
-
2008
- 2008-03-20 US US12/076,617 patent/US7799589B2/en active Active
- 2008-03-25 EP EP08005515.5A patent/EP1980884B1/en active Active
- 2008-04-08 CN CN2008100909786A patent/CN101285912B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04304414A (ja) * | 1991-04-01 | 1992-10-27 | Nippon Telegr & Teleph Corp <Ntt> | 光素子および光素子材料 |
JP2003270593A (ja) * | 2002-03-18 | 2003-09-25 | Univ Kansai | 光スイッチ |
JP2005157210A (ja) * | 2003-11-28 | 2005-06-16 | Nippon Telegr & Teleph Corp <Ntt> | シリコン光導波路の製造方法 |
JP2006210899A (ja) * | 2004-12-28 | 2006-08-10 | Shin Etsu Chem Co Ltd | Soiウエーハの製造方法及びsoiウェーハ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010250270A (ja) * | 2009-04-10 | 2010-11-04 | Emprie Technology Development LLC | 光回路デバイス及び方法 |
JP2013505485A (ja) * | 2009-09-25 | 2013-02-14 | インテル・コーポレーション | ウェハ貼り合わせ技術を利用する光変調器 |
Also Published As
Publication number | Publication date |
---|---|
EP1980884A3 (en) | 2012-11-28 |
JP4925902B2 (ja) | 2012-05-09 |
CN101285912A (zh) | 2008-10-15 |
EP1980884A2 (en) | 2008-10-15 |
EP1980884B1 (en) | 2017-02-15 |
US7799589B2 (en) | 2010-09-21 |
US20090032831A1 (en) | 2009-02-05 |
CN101285912B (zh) | 2013-01-23 |
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