JP2008252058A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2008252058A
JP2008252058A JP2007245852A JP2007245852A JP2008252058A JP 2008252058 A JP2008252058 A JP 2008252058A JP 2007245852 A JP2007245852 A JP 2007245852A JP 2007245852 A JP2007245852 A JP 2007245852A JP 2008252058 A JP2008252058 A JP 2008252058A
Authority
JP
Japan
Prior art keywords
sheet
sealing material
semiconductor chip
electrode
conductive member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007245852A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008252058A5 (enExample
Inventor
Hiroshi Tojo
啓 東條
Tomoyuki Kitani
智之 木谷
Tomohiro Iguchi
知洋 井口
Masako Hirahara
昌子 平原
Hideo Nishiuchi
秀夫 西内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007245852A priority Critical patent/JP2008252058A/ja
Priority to US12/044,299 priority patent/US20080217754A1/en
Priority to CN200810082197.2A priority patent/CN101261971B/zh
Publication of JP2008252058A publication Critical patent/JP2008252058A/ja
Publication of JP2008252058A5 publication Critical patent/JP2008252058A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2007245852A 2007-03-08 2007-09-21 半導体装置及びその製造方法 Withdrawn JP2008252058A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007245852A JP2008252058A (ja) 2007-03-08 2007-09-21 半導体装置及びその製造方法
US12/044,299 US20080217754A1 (en) 2007-03-08 2008-03-07 Semiconductor device and manufacturing method thereof
CN200810082197.2A CN101261971B (zh) 2007-03-08 2008-03-07 半导体装置及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007058564 2007-03-08
JP2007245852A JP2008252058A (ja) 2007-03-08 2007-09-21 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2008252058A true JP2008252058A (ja) 2008-10-16
JP2008252058A5 JP2008252058A5 (enExample) 2009-11-12

Family

ID=39962312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007245852A Withdrawn JP2008252058A (ja) 2007-03-08 2007-09-21 半導体装置及びその製造方法

Country Status (2)

Country Link
JP (1) JP2008252058A (enExample)
CN (1) CN101261971B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062316A (ja) * 2008-09-03 2010-03-18 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2011155082A (ja) * 2010-01-26 2011-08-11 Toshiba Corp 半導体装置の製造方法
JP2019514227A (ja) * 2016-04-25 2019-05-30 シェンヂェン シーロン トイ カンパニー リミテッドＳｈｅｎｚｈｅｎ Ｘｉｌｏｎｇ Ｔｏｙ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ 分離回路の部品の集積接続の実現方法及び回路

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9373609B2 (en) * 2012-10-18 2016-06-21 Infineon Technologies Ag Bump package and methods of formation thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438222A (en) * 1989-08-28 1995-08-01 Semiconductor Energy Laboratory Co., Ltd. Electronic device with plural pad connection of semiconductor chip to leads
KR100444228B1 (ko) * 2001-12-27 2004-08-16 삼성전기주식회사 칩 패키지 및 그 제조방법
KR100461718B1 (ko) * 2002-03-18 2004-12-14 삼성전기주식회사 칩 패키지 및 그 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062316A (ja) * 2008-09-03 2010-03-18 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2011155082A (ja) * 2010-01-26 2011-08-11 Toshiba Corp 半導体装置の製造方法
JP2019514227A (ja) * 2016-04-25 2019-05-30 シェンヂェン シーロン トイ カンパニー リミテッドＳｈｅｎｚｈｅｎ Ｘｉｌｏｎｇ Ｔｏｙ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ 分離回路の部品の集積接続の実現方法及び回路

Also Published As

Publication number Publication date
CN101261971B (zh) 2010-04-14
CN101261971A (zh) 2008-09-10

Similar Documents

Publication Publication Date Title
KR101758585B1 (ko) 세라믹기판 및 그 제조방법
JP6502205B2 (ja) 多層配線基板およびその製造方法
JP5977180B2 (ja) 配線基板
JP2009278064A (ja) 半導体装置とその製造方法
JP4183708B2 (ja) 部品内蔵基板の製造方法
JP2018133572A (ja) 多層配線基板およびこれを備えるプローブカード
JP4970388B2 (ja) 半導体装置及び半導体装置の製造方法
JP2008252058A (ja) 半導体装置及びその製造方法
JP2008091874A (ja) セラミック回路基板とその製造方法
JP5574917B2 (ja) 多層配線基板
JP2007250564A (ja) セラミック回路モジュールおよびその製造方法
US9847279B2 (en) Composite lead frame structure
US20080217754A1 (en) Semiconductor device and manufacturing method thereof
JP4082265B2 (ja) 半導体装置の製造方法
JP2013191678A (ja) 多層配線基板
JP4265478B2 (ja) 半導体装置及びその製造方法
JP2010056506A (ja) 電子装置の実装構造
JP4619104B2 (ja) 半導体装置
JP5743561B2 (ja) 配線基板
US20160190045A1 (en) Semiconductor device and method of making the same
JP2006108130A (ja) 半導体装置およびその製造方法
JP2009182238A (ja) セラミックパッケージおよびその製造方法
JP2010278306A (ja) 半導体装置
JP2008047794A (ja) 半導体装置および半導体装置の製造方法
JP2008053654A (ja) プリント配線基板及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090925

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090925

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20100419