JP2008244281A - 窒化物半導体レーザ素子の製造方法 - Google Patents

窒化物半導体レーザ素子の製造方法 Download PDF

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Publication number
JP2008244281A
JP2008244281A JP2007084754A JP2007084754A JP2008244281A JP 2008244281 A JP2008244281 A JP 2008244281A JP 2007084754 A JP2007084754 A JP 2007084754A JP 2007084754 A JP2007084754 A JP 2007084754A JP 2008244281 A JP2008244281 A JP 2008244281A
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Prior art keywords
nitride semiconductor
ridge
semiconductor laser
laser device
semiconductor substrate
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JP2007084754A
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Japanese (ja)
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JP2008244281A5 (enExample
Inventor
Teruyoshi Takakura
輝芳 高倉
Takeshi Kamikawa
剛 神川
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Sharp Corp
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Sharp Corp
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Priority to JP2007084754A priority Critical patent/JP2008244281A/ja
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Publication of JP2008244281A5 publication Critical patent/JP2008244281A5/ja
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JP2007084754A 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法 Pending JP2008244281A (ja)

Priority Applications (1)

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JP2007084754A JP2008244281A (ja) 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法

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JP2007084754A JP2008244281A (ja) 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法

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JP2008244281A true JP2008244281A (ja) 2008-10-09
JP2008244281A5 JP2008244281A5 (enExample) 2009-06-18

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JP2007084754A Pending JP2008244281A (ja) 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319987A (ja) * 2003-03-31 2004-11-11 Sanyo Electric Co Ltd 半導体レーザ素子
JP2005064469A (ja) * 2003-07-31 2005-03-10 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2005353808A (ja) * 2004-06-10 2005-12-22 Sharp Corp 半導体素子、半導体装置及びその製造方法
JP2006066869A (ja) * 2004-04-02 2006-03-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及び窒化物半導体素子
JP2006134926A (ja) * 2004-11-02 2006-05-25 Sharp Corp 窒化物半導体素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319987A (ja) * 2003-03-31 2004-11-11 Sanyo Electric Co Ltd 半導体レーザ素子
JP2005064469A (ja) * 2003-07-31 2005-03-10 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2006066869A (ja) * 2004-04-02 2006-03-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及び窒化物半導体素子
JP2005353808A (ja) * 2004-06-10 2005-12-22 Sharp Corp 半導体素子、半導体装置及びその製造方法
JP2006134926A (ja) * 2004-11-02 2006-05-25 Sharp Corp 窒化物半導体素子

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