JP2008244281A5 - - Google Patents

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Publication number
JP2008244281A5
JP2008244281A5 JP2007084754A JP2007084754A JP2008244281A5 JP 2008244281 A5 JP2008244281 A5 JP 2008244281A5 JP 2007084754 A JP2007084754 A JP 2007084754A JP 2007084754 A JP2007084754 A JP 2007084754A JP 2008244281 A5 JP2008244281 A5 JP 2008244281A5
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JP
Japan
Prior art keywords
nitride semiconductor
growth region
laser device
ridge
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007084754A
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English (en)
Japanese (ja)
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JP2008244281A (ja
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Publication date
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Priority to JP2007084754A priority Critical patent/JP2008244281A/ja
Priority claimed from JP2007084754A external-priority patent/JP2008244281A/ja
Publication of JP2008244281A publication Critical patent/JP2008244281A/ja
Publication of JP2008244281A5 publication Critical patent/JP2008244281A5/ja
Pending legal-status Critical Current

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JP2007084754A 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法 Pending JP2008244281A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007084754A JP2008244281A (ja) 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007084754A JP2008244281A (ja) 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
JP2008244281A JP2008244281A (ja) 2008-10-09
JP2008244281A5 true JP2008244281A5 (enExample) 2009-06-18

Family

ID=39915224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007084754A Pending JP2008244281A (ja) 2007-03-28 2007-03-28 窒化物半導体レーザ素子の製造方法

Country Status (1)

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JP (1) JP2008244281A (enExample)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583058B2 (ja) * 2003-03-31 2010-11-17 三洋電機株式会社 半導体レーザ素子
JP4390640B2 (ja) * 2003-07-31 2009-12-24 シャープ株式会社 窒化物半導体レーザ素子、窒化物半導体発光素子、窒化物半導体ウェハおよびそれらの製造方法
JP2006066869A (ja) * 2004-04-02 2006-03-09 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及び窒化物半導体素子
JP4651312B2 (ja) * 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
JP4772314B2 (ja) * 2004-11-02 2011-09-14 シャープ株式会社 窒化物半導体素子

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