JP2008227538A - 配線基板の製造方法、及び配線基板 - Google Patents
配線基板の製造方法、及び配線基板 Download PDFInfo
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- JP2008227538A JP2008227538A JP2008126094A JP2008126094A JP2008227538A JP 2008227538 A JP2008227538 A JP 2008227538A JP 2008126094 A JP2008126094 A JP 2008126094A JP 2008126094 A JP2008126094 A JP 2008126094A JP 2008227538 A JP2008227538 A JP 2008227538A
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- metal foil
- wiring
- dielectric sheet
- conductor
- dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】製造時における補強のための支持基板20上に形成された下地誘電体層21の主表面上に、2つの金属箔5a、5bが密着してなる金属箔密着体5と、かつ該金属箔密着体5の周囲領域21cにて下地誘電体層21と密着して該金属箔密着体5を封止する第一誘電体シート11と、第一導体層31と、第一誘電体シート11に貫通形成された第一ビア導体41と、を有する積層シート体10を形成するとともに、積層シート体10のうち、金属箔密着体5上の領域を配線基板となるべき配線積層部100として、その周囲部を除去し、配線積層部100を片方の金属箔5bが付着した状態で、2つの金属箔5a、5bの界面にて剥離する。
【選択図】図1
Description
5金属箔密着体
10積層シート体
11第一誘電体シート
20支持基板
21下地誘電体シート
100配線積層シート体
Claims (10)
- コア基板を有さず、かつ両主表面が誘電体層にて構成されるよう、高分子材料からなる誘電体層と導体層とが交互に積層された配線基板を製造するために、製造時における補強のための支持基板上に形成された下地誘電体シートの主表面上に、該主表面に包含されるよう配された、分離可能な2つの金属箔が密着してなる金属箔密着体と、該金属箔密着体を包むよう形成され、かつ該金属箔密着体の周囲領域にて前記下地誘電体シートと密着して該金属箔密着体を封止する第一誘電体シートと、該第一誘電体シート上に形成された第一導体層と、該第一導体層と前記金属箔密着体とを接続する前記第一誘電体シートに貫通形成された第一ビア導体と、を有する積層シート体を形成するとともに、前記積層シート体のうち、前記金属箔密着体上の領域を前記配線基板となるべき配線積層部として、その周囲部を除去し、該配線積層部の端面を露出させた後、前記配線積層部を前記支持基板から、片方の金属箔が付着した状態で、前記金属箔密着体における2つの金属箔の界面にて剥離することを特徴とする配線基板の製造方法。
- 前記第一誘電体シートは、前記支持基板側の下部第一誘電体シートと、その上に形成された上部第一誘電体シートとにてなるものであり、前記下部第一誘電体シートの所定の位置に開口を貫通形成し、該開口の壁部および底部を含む領域を覆うように被膜導体部を形成し、該被膜導体部が封止されるように前記上部第一誘電体シートを前記下部第一誘電体シート上に形成し、前記開口の底部をなす部位と接続するように前記上部第一誘電体シートに前記第一ビア導体を貫通形成するとともに、前記配線積層部を前記支持基板から剥離し、該配線積層部の前記第一誘電体シートが構成する主表面に付着した前記金属箔を除去したのちには、当該主表面に露出した前記被膜導体部を金属端子パッドとすることを特徴とする請求項1に記載の配線基板の製造方法。
- 前記第一導体層の形成は、前記上部第一誘電体シートにおいて、前記開口及びその近傍を除く領域をマスク材により被膜し、メッキ処理により前記被膜導体部を選択的に形成することを特徴とする請求項2に記載の配線基板の製造方法。
- 前記積層シート体において前記配線積層部の周囲部を除去する際、該周囲部とともに、前記支持基板及び前記下地誘電体シートの該周囲部下にあたる領域も除去することを特徴とする請求項1ないし3のいずれか1項に記載の配線基板の製造方法。
- 前記配線積層部を前記支持基板から剥離した後に、該配線積層部の前記第一誘電体シートが構成する主表面に付着した前記金属箔を除去し、前記第一ビア導体と接続された金属端子を前記主表面に形成することを特徴とする請求項1ないし4のいずれか1項に記載の配線基板の製造方法。
- 前記配線積層部を前記支持基板から剥離した後に、該配線積層部の前記第一誘電体シートが形成された主表面に付着した前記金属箔を選択的に除去し、前記第一ビア導体と接続され、かつ残存した前記金属箔を一部とした金属端子を形成することを特徴とする請求項1ないし4のいずれか1項に記載の配線基板の製造方法。
- 前記金属箔密着体及び前記第一誘電体シートは、半硬化状態の前記下地誘電体シート上に配されることを特徴とする請求項1ないし6のいずれか1項に記載の配線基板の製造方法。
- コア基板を有さず、かつ両主表面が誘電体層にて構成されるよう、高分子材料からなる誘電体層と導体層とが交互に積層され、第一主表面をなす第一誘電体層に貫通形成されたビア孔内に、該第一誘電体層直下の第一導体層と接続されたビア導体が形成されてなるとともに、該ビア導体は、前記第一主表面側の端面が前記ビア孔内に位置してなり、当該端面には、金属端子が接続されてなることを特徴とする配線基板。
- 前記ビア導体の前記端面の、前記第一主表面からの深さ位置をD、前記ビア孔の最大径をWとしたとき、比D/Wが0超過0.5以下であることを特徴とする請求項8に記載の配線基板。
- コア基板を有さず、かつ両主表面が誘電体層にて構成されるよう、高分子材料からなる誘電体層と導体層とが交互に積層され、第一主表面に、金属箔にて構成される金属端子が形成されてなることを特徴とする配線基板。
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JP2008126094A JP4203537B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
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JP2003206800 | 2003-08-08 | ||
JP2008126094A JP4203537B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
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JP2004055503A Division JP4549695B2 (ja) | 2003-08-08 | 2004-02-27 | 配線基板の製造方法 |
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JP2008227538A true JP2008227538A (ja) | 2008-09-25 |
JP4203537B2 JP4203537B2 (ja) | 2009-01-07 |
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JP2008125999A Expired - Fee Related JP4203535B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
JP2008126083A Expired - Fee Related JP4203536B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
JP2008126095A Expired - Fee Related JP4203538B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
JP2008126094A Expired - Fee Related JP4203537B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
JP2008286947A Pending JP2009076928A (ja) | 2003-08-08 | 2008-11-07 | 配線基板の製造方法 |
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JP2008125999A Expired - Fee Related JP4203535B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
JP2008126083A Expired - Fee Related JP4203536B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
JP2008126095A Expired - Fee Related JP4203538B2 (ja) | 2003-08-08 | 2008-05-13 | 配線基板の製造方法、及び配線基板 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011129681A (ja) * | 2009-12-17 | 2011-06-30 | Hitachi Chem Co Ltd | 多層配線基板 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400025B (zh) * | 2009-12-29 | 2013-06-21 | Subtron Technology Co Ltd | 線路基板及其製作方法 |
CN103781292B (zh) * | 2012-10-17 | 2017-09-19 | 碁鼎科技秦皇岛有限公司 | 电路板及其制作方法 |
JP6169894B2 (ja) * | 2013-05-28 | 2017-07-26 | 日東電工株式会社 | 配線回路基板 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3811680B2 (ja) * | 2003-01-29 | 2006-08-23 | 富士通株式会社 | 配線基板の製造方法 |
JP4549695B2 (ja) * | 2003-08-08 | 2010-09-22 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
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2008
- 2008-05-13 JP JP2008125999A patent/JP4203535B2/ja not_active Expired - Fee Related
- 2008-05-13 JP JP2008126083A patent/JP4203536B2/ja not_active Expired - Fee Related
- 2008-05-13 JP JP2008126095A patent/JP4203538B2/ja not_active Expired - Fee Related
- 2008-05-13 JP JP2008126094A patent/JP4203537B2/ja not_active Expired - Fee Related
- 2008-11-07 JP JP2008286947A patent/JP2009076928A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011129681A (ja) * | 2009-12-17 | 2011-06-30 | Hitachi Chem Co Ltd | 多層配線基板 |
Also Published As
Publication number | Publication date |
---|---|
JP4203538B2 (ja) | 2009-01-07 |
JP4203535B2 (ja) | 2009-01-07 |
JP2008227537A (ja) | 2008-09-25 |
JP2009076928A (ja) | 2009-04-09 |
JP4203536B2 (ja) | 2009-01-07 |
JP2008193130A (ja) | 2008-08-21 |
JP4203537B2 (ja) | 2009-01-07 |
JP2008244491A (ja) | 2008-10-09 |
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