JP2008219057A - ルミネセンス変換層を備えた発光ダイオード光源を製造するための方法 - Google Patents
ルミネセンス変換層を備えた発光ダイオード光源を製造するための方法 Download PDFInfo
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- JP2008219057A JP2008219057A JP2008158177A JP2008158177A JP2008219057A JP 2008219057 A JP2008219057 A JP 2008219057A JP 2008158177 A JP2008158177 A JP 2008158177A JP 2008158177 A JP2008158177 A JP 2008158177A JP 2008219057 A JP2008219057 A JP 2008219057A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 70
- 238000004020 luminiscence type Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 69
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract 3
- 230000008021 deposition Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002223 garnet Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
【解決手段】チップをルミネセンス変換材料でもってコーティングする前に、ウェハ結合体全体を該ウェハ結合体の裏側を用いて支持体に被着し、チップが依然として支持体に一緒に保持されるようにチップをウェハ結合体から個別化し、個別化されたチップの側方縁を該チップのコーティングの際に少なくとも部分的にルミネセンス変換材料でもって覆い、続いてチップを基板およびルミネセンス変換材料による結合体から発光ダイオード光源に個別化する。
【選択図】図2B
Description
Claims (13)
- チップから放射される一次ビームの少なくとも一部がルミネセンス変換によって変換される、例えば混合色発光ダイオード光源を製造するための方法において、
表側の電気的なコンタクトを電気的なコンタクト面の形状で有するチップを準備するステップと、
前記表側の電気的なコンタクトを前記電気的なコンタクト面に導電性材料を被着させることにより厚くするステップと、
前記チップをルミネセンス変換材料でもってコーティングするステップとを有し、
前記一次ビームを放射するチップは複数の別の同種のチップと共にウェハ結合体に存在し、前記の各ステップを前記ウェハ結合体全体の複数のチップに対してその都度同時に行い、
前記チップをルミネセンス変換材料でもってコーティングする前に、
前記ウェハ結合体全体を該ウェハ結合体の裏側を用いて支持体に被着し、
前記チップが依然として前記支持体に一緒に保持されるように前記チップを前記ウェハ結合体から個別化し、
個別化された前記チップの側方縁を該チップのコーティングの際に少なくとも部分的にルミネセンス変換材料でもって覆い、
続いて前記チップを前記基板および前記ルミネセンス変換材料による結合体から発光ダイオード光源に個別化することを特徴とする、発光ダイオード光源を製造するための方法。 - 前記ルミネセンス変換材料は、蛍光材料と混合されているビーム透過性のマトリクス材料を有する、請求項1記載の方法。
- 前記ビーム透過性のマトリクス材料はSiO2および/またはAl2O3を有する、請求項2記載の方法。
- 前記ビーム透過性のマトリクス材料は酸化物および/または窒化物を有し、該酸化物および/または窒化物の屈折率は1.5から3.4である、請求項2または3記載の方法。
- ルミネセンス変換材料でもって覆われている電気的な端子を、続けて前記ルミネセンス変換材料の薄層化により露出させる、請求項1から4までのいずれか1項記載の方法。
- ルミネセンス変換材料からなる前記層を薄層化により平坦化する、請求項1から5までのいずれか1項記載の方法。
- 前記ルミネセンス変換材料からなる前記層の薄層化によって該層の厚さを調節する、請求項1から6までのいずれか1項記載の方法。
- 支持体としてシートを使用する、請求項1から7までのいずれか1項記載の方法。
- 前記シートは伸張可能である、請求項8記載の方法。
- 前記ウェハ結合体から前記チップを個別化した後且つ前記チップをルミネセンス変換材料でもってコーティングする前に、前記チップの間隔が相互に一方向または複数の方向に拡大されるように前記シートを伸ばす、請求項9記載の方法。
- 隣接するチップ間の中間領域が部分的または完全に充填されるように前記チップをルミネセンス変換材料でもってコーティングする、請求項1から10までのいずれか1項記載の方法。
- 被着された前記導電性材料が少なくとも部分的に露出されるように前記チップをルミネセンス変換材料でもってコーティングする、請求項1から11までのいずれか1項記載の方法。
- 前記ルミネセンス変換材料は低い粘性を有し、
該ルミネセンス変換材料を前記電気的なコンタクト間の少なくとも1個所に塗布し、前記低い粘性に基づき均等に分散させる、請求項12記載の方法。
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DE10250633 | 2002-10-30 | ||
DE10257664A DE10257664A1 (de) | 2002-12-10 | 2002-12-10 | Verfahren zum Herstellen einer Leuchtdioden-Lichtquelle mit Lumineszenz-Konversionselement |
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JP2004547408A Division JP2006505118A (ja) | 2002-10-30 | 2003-10-21 | ルミネセンス変換層を備えた発光ダイオード光源を製造するための方法 |
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JP2004547408A Pending JP2006505118A (ja) | 2002-10-30 | 2003-10-21 | ルミネセンス変換層を備えた発光ダイオード光源を製造するための方法 |
JP2008158177A Pending JP2008219057A (ja) | 2002-10-30 | 2008-06-17 | ルミネセンス変換層を備えた発光ダイオード光源を製造するための方法 |
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US (2) | US20060003477A1 (ja) |
EP (1) | EP1556904B1 (ja) |
JP (2) | JP2006505118A (ja) |
TW (1) | TWI230471B (ja) |
WO (1) | WO2004040661A2 (ja) |
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- 2003-10-21 US US10/532,848 patent/US20060003477A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
US20090197361A1 (en) | 2009-08-06 |
US20060003477A1 (en) | 2006-01-05 |
EP1556904B1 (de) | 2018-12-05 |
WO2004040661A2 (de) | 2004-05-13 |
TWI230471B (en) | 2005-04-01 |
US7824941B2 (en) | 2010-11-02 |
WO2004040661A3 (de) | 2004-09-10 |
JP2006505118A (ja) | 2006-02-09 |
EP1556904A2 (de) | 2005-07-27 |
TW200411959A (en) | 2004-07-01 |
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